Optical spin injection in InAs/GaAs quantum dots (QDs) structures under cryogenic temperature has been investigated in this work using continuous-wave optical orientation spectroscopy. Circularly polarized luminescence from trions in the QDs was used as a measure for the degree of spin polarization of the carriers in the QD ground states. The efficiency of spin conservation of the carriers during the injection process into the QDs and also the influence of the nuclear spins in the QDs were studied both under zero and external magnetic field. It was shown in zero magnetic field that the spin states were less conserved during the injection process for correlated excitons and hot free carriers. While under the external magnetic field, measurements were done in Faraday configuration. Confined electron motion yielding the quantized Landau levels in the InGaAs wetting layer (WL) and lifting of the Landau level spin degeneracy was observed. Also possible spin thermalization in the InGaAs WL during spin injection process was found. Finally, the quench of hyperfine induced spin relaxation by dynamic nuclear polarization (DNP) in the QDs was discovered and believed to be a stronger effect under weak/zero magnetic field.

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