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Colloidal HgTe quantum dot based near-to-mid infrared photodetectors / CUHK electronic theses & dissertations collectionJanuary 2015 (has links)
Chen, Mengyu. / Thesis Ph.D. Chinese University of Hong Kong 2015. / Includes bibliographical references (leaves 147-161). / Abstracts also in Chinese. / Title from PDF title page (viewed on 26, October, 2016).
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Modeling of high speed photodetectors /El-Batawy, Yasser M. Deen, M. Jamal January 2005 (has links)
Thesis (Ph.D.)--McMaster University, 2005. / Advisor: M. Jamal Deen. Includes bibliographical references (p. 175-186). Also available online.
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High-speed and high-saturation-current partially depleted absorber photodetecters [i.e. photodetectorsLi, Xiaowei, Campbell, Joe, January 2004 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Joe C. Campbell. Vita. Includes bibliographical references.
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High-speed and high-saturation-current partially depleted absorber photodetecters [i.e. photodetectorsLi, Xiaowei, 1970 May 5- 01 August 2011 (has links)
Not available / text
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Optical detection using four-layer semiconductor structuresMoore, David A. 06 1900 (has links)
The application of a thyristor (a four-layer P1-N1-P2-N2 semiconductor structure) as an optical detector is explored. Based on laboratory experiments which demonstrated that this device produces a pulse-mode output to incident light, the thyristor is investigated by comparing the existing theory of static forward-biased operation to simulation results obtained using ATLAS by Silvaco, Inc. The results include identification of the holding point on the IV curve by simulating the junction potential across each junction as a function of current, and demonstration that impact ionization is not a critical factor in thyristor operation. A series of simulations were performed which show that the thyristor can be optimized for use as a detector by decreasing the emitter efficiencies by decreasing the doping in the P1 and N2 layers, or by increasing the doping in the P2 layer; the switching voltage can be controlled by selecting the doping and thickness of the N1 layer. A detector device was designed to allow further testing of the thyristor detector using the ABN CMOS process from AMI Semiconductor via the MOSIS service. The design of this device is discussed and simulated IV curves are presented.
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Characterization and analysis of a multicolor quantum well infrared photodetectorHanson, Nathan A. 06 1900 (has links)
This thesis presents analysis and characterization of performance of a newly designed, multicolor quantum well infrared photodetector (QWIP). Specifically, it focuses on a detector capable of detecting infrared emissions in the near infrared (NIR), mid-wavelength infrared (MWIR), and long-wavelength infrared (LWIR). Through photocurrent spectroscopy and performance analysis, this prototype detector can be classified and prepared for possible future use within the U.S. Armed Forces. Certain military applications require a highly accurate, reliable, sensitive, and multispectral infrared detector to identify targets and ensure mission success. By designing and fabricating a multicolor quantum well infrared photodetector, simultaneous detection of targets in the near infrared, mid-wavelength infrared and long-wavelength infrared is possible using only one detector. In addition, power and cooling requirements for quantum well infrared detectors makes them suitable for use in the field. / US Navy (USN) author.
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MOCVD growth for UV photodetectors and light emitting diodesChowdhury, Uttiya. January 2002 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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Polymeric waveguide optical switches based on electrooptic and thermooptic beam deflectors integrated with etched TIR mirrorsKim, Jin-ha. January 2003 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.
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Waveguide avalanche photodetectors /Kinsey, Geoffrey Sherwood, January 2001 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references (leaves 60-66). Available also in a digital version from Dissertation Abstracts.
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MOCVD growth for UV photodetectors and light emitting diodesChowdhury, Uttiya 28 August 2008 (has links)
Not available / text
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