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Radiation-induced evolution of microstructure and mechanical properties of stainless steelsHankin, G. L. January 1998 (has links)
Radiation-induced changes in microstructures often lead to significant changes in mechanical properties of alloys used in the construction of nuclear reactors. It is desirable to test small specimens to make efficient use of the small volumes available in test and commercial reactor cores and also because small specimens are less affected by the sometimes steep flux gradients experienced in reactor cores and the sometimes large temperature gradients developed in the specimens from gamma heating. (Continues...).
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Radiation effects on custom MOS devicesHarris, Rhodri January 1999 (has links)
No description available.
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Microscopic studies of doped and electron irradiated CVD diamondGilmore, Annette Clare January 1999 (has links)
No description available.
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Semiconductor detectors for the inner tracker of the ATLAS experiment at CERNMorgan, Debbie January 1998 (has links)
No description available.
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A first principles study of radiation defects in semiconductorsCoomer, Byron James Fraser January 2000 (has links)
No description available.
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Simulation of neutron radiation effects in silicon avalanche photodiodesOsborne, Mark David January 2000 (has links)
A new one-dimensional device simulation package developed for the simulation of neutron radiatiol! effects in silicon avalanche photodiodes is described. The software uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. Impact ionisation and illumination are included, allowing accurate simulation with minimal assumptions about the device under investigation. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Two models are presented. A reverse reach through model, based on the EG&G C30626E reverse reach through avalanche photo diode originally proposed for use in the CMS electromagnetic calorimeter, and a reach through model, based on widely available commerical devices. A short experimental study on two commercial silicon avalanche photodiodes, a C30719F reverse reach through APD and a C30916E reach through APD, is presented for comparison with the simulation data. To allow full comparison with the simulated predictions, the commercial devices were irradiated at the Rutherford Appleton Laboratory's ISIS facility. The simulated data shows good qualitative agreement with the measurements performed on the commercial devices, quantitative predictions would require exact information about the doping profile. The characteristic behaviour of the devices is predicted over a wide range of conditions both before and after neutron irradiation. The effect of ionised deep acceptors in the bulk of the devices is investigated. The simulation package provides a useful tool for the analysis of semiconductor devices, particularly in areas where a non-ionising radiation damage is prevelent e.g. high energy physics, and provides a good basis for further development.
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Estudo do comportamento de tintas para a aplicacao em instalacoes nuclearesYAMASHITA, TOSHIYUKI 09 October 2014 (has links)
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Danos de radiacao em componentes quimicos de detectores cintiladores organicosFERNANDES NETO, JOSE M. 09 October 2014 (has links)
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Simulacao de danos e efeitos da radiacao em materiais estruturaisKUZNETSOV, OLEXIY 09 October 2014 (has links)
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Estudo do comportamento de tintas para a aplicacao em instalacoes nuclearesYAMASHITA, TOSHIYUKI 09 October 2014 (has links)
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