This work investigates the optimal measurement matrices that can be used in compressive sensing (CS) image sensors. It also optimizes CMOS current-model pixel cell circuits for CS image sensors. Based on the outcomes from these optimization studies, three CS image senor circuits with compression ratios of 4, 6, and 8 are designed with using a 130 nm CMOS technology. The pixel arrays used in the image sensors has a size of 256X256. Circuit simulations with benchmark image Lenna show that the three images sensors can achieve peak signal to noise ratio (PSNR) values of 37.64, 33.29, and 32.44 dB respectively.