Submitted by Caroline Xavier (caroline.xavier@pucrs.br) on 2017-04-07T18:03:32Z No. of bitstreams: 1 DIS_JESSICA_DE_AQUINO_COMPLETO.pdf: 2934640 bytes, checksum: 153da3d44efdfe566dcf3c4a87da1eac (MD5) / Made available in DSpace on 2017-04-07T18:03:32Z (GMT). No. of bitstreams: 1 DIS_JESSICA_DE_AQUINO_COMPLETO.pdf: 2934640 bytes, checksum: 153da3d44efdfe566dcf3c4a87da1eac (MD5) Previous issue date: 2017-01-24 / The majority of silicon solar cells manufactured in an industrial scale is processed in Si-Cz p-type substrates and has the n+pp+ structure. In the last decade, the search for efficiency improvements and fabrication cost reductions has been intensified. Since the cell efficiency is limited by optical losses and surface recombination, the rear and front surface passivation is an alternative for the enhancement of the efficiency. The goal of this dissertation is to develop and analyze solar cells with selective back surface field of boron and aluminum and silicon nitride thin films for the passivation of both surfaces. The silicon nitride thin films were deposited by PECVD (plasma-enhanced chemical vapor deposition), with ratios of silane to ammonia gas flow of 0.875, 1.5 and 2.0, and deposition time of 60 to 100 seconds, adjusted to form the anti-reflection coating. The thickness of the SiNx films, minority carrier lifetime, electrical parameters, minority carrier diffusion length and quantum efficiency were analyzed and compared. The results indicate that the lower the ratio between the silane and ammonia gas flows and the shorter the deposition time, the higher the efficiency of the solar cells manufactured. Due to the passivation, mainly in the front face, caused by the silicon nitride film deposited with the lower ratio of silane and ammonia gas flow and lower deposition time, we observed an increasing oh the internal quantum efficiency, mainly in shorter wavelength. The efficiency reached was 16.0 %, similar to the efficiency of solar cells with aluminium homogeneous back surface field. / A maioria das c?lulas solares de sil?cio fabricadas em escala industrial ? processada em substratos de Si-Cz tipo p e possuem estrutura n+pp+. Na ?ltima d?cada, intensificou-se a busca por melhores efici?ncias e redu??o dos custos de fabrica??o. Como as c?lulas s?o limitadas pelas perdas ?pticas e pela recombina??o nas superf?cies, a passiva??o da superf?cie posterior, al?m da superf?cie frontal, ? uma alternativa para aumentar a efici?ncia dos dispositivos. O objetivo dessa disserta??o ? desenvolver e avaliar c?lulas solares com campo retrodifusor seletivo de boro e alum?nio e passivadas com filme fino de nitreto de sil?cio em ambas as faces. Os filmes de nitreto de sil?cio foram depositados por PECVD (plasmaenhanced chemical vapor deposition) com a raz?o da vaz?o dos gases silano e am?nia de 0,875, 1,5 e 2,0 e tempos de deposi??o de 60 a 100 segundos, ajustados para formar o filme antirreflexo. Analisaram-se e compararam-se a espessura do filme, o tempo de vida dos portadores de carga minorit?rios, os par?metros el?tricos, o comprimento de difus?o e a efici?ncia qu?ntica. Os resultados indicaram que quanto menor a raz?o entre o fluxo dos gases silano e am?nia e menor tempo de deposi??o, maior a efici?ncia das c?lulas solares fabricadas. Devido a maior passiva??o, principalmente na face frontal provocada pelo filme de nitreto de sil?cio depositado com a menor raz?o da vaz?o dos gases silano e am?nia e menor tempo de deposi??o, observou-se um aumento da efici?ncia qu?ntica interna, principalmente para menores comprimentos de onda e alcan?ou-se a efici?ncia de 16,0 %, similar ? efici?ncia das c?lulas solares com emissor homog?neo de alum?nio.