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Thesis (M.S.E.C.E.)--University of Delaware, 2008. / Principal faculty advisor: Balaji Panchapakesan, Dept. of Electrical & Computer Engineering. Includes bibliographical references.

Thesis (Master)--İzmir Institute Of Technology, İzmir, 2005. / Keywords: Microcrystalline silicon, absorption, spectroscopy, defect, dual beam photoconductivity. Includes bibliographical references (leaves. 81-86).

Thesis (Ph. D.)--University of Wisconsin--Madison, 1957. / Typescript. Abstracted in Dissertation abstracts, v. 17 (1957) no. 8, p. 1792. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 74-75).

Thesis (M.S.)--West Virginia University, 2000. / Title from document title page. Document formatted into pages; contains iv, 68 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 67-68).

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In this study, we have investigated the photo-response of gallium antimonide (GaSb) by measuring the spectral, injection level, as well as the temperature dependence of the steady-state photoconductivity of epitaxial films. By combining the various photo-response measurements with-galvanometric measurements, the effective excess carrier lifetimes could be calculated and described in terms of the various experimental variables considered. From a comparison of the measured and theoretical carrier lifetimes, a clear discrepancy was found for the injection dependent results. This inconsistency between the expected and measured behaviours was resolved using a two-layer model to describe the photo-conductive response of the thin film. In this model, the generation/recombination processes are considered for the bulk as well as for a depleted near-surface region. By combining these two contributions when calculating the total excess photocurrent, the various experimental results could be successfully described. The photo-response measurements revealed that the main contribution to the photocurrent came from the near-surface region, where the bandto- band and Auger recombination transitions are reduced. From the simulation of the injection level dependence of the excess carrier lifetime, some of the near-surface characteristics, such as the position of the surface Fermi-level and the surface recombination velocity, could be determined. In the case of p-type GaSb, the room temperature surface Fermi-level was found to be pinned (290±20) meV above the valence band maximum, whereas the n-type material had a pinning position of (150±20) meV above the valence band maximum. These pinning positions were shown to be independent of the doping density and relatively insensitive to the surface treatments considered. The presence of a near-surface depletion region, as well as the position of the surface Fermi-level, was corroborated by Raman spectroscopy. From a comparison of the phonon mode and the phonon-hole plasmon coupled mode, a surface Fermi-level position of (300 ± 30) meV was deduced for p-type GaSb. Finally, the effect various surface treatments have on the photo-response, and related surface properties, were investigated. Removal of the native oxide (HCl:H2O) followed by sulphur passivation (Na2S:9H2O) results in a slight decrease in the surface Fermi-level position. Aging studies however revealed that the surface characteristics reverted back to the untreated values following a few days in air. Coating the GaSb surfaces with a thin ZnS layer was found to have little effect on the surface potential, resulting only in a slight increase in the near-surface donor density. The sensitivity of the measured photocurrent to surface treatments and changes in the ambient with cooling, further validate the importance of considering the surface potential and the related space-charge when describing the photoconductive response of GaSb thin films.

The effect of impurity concentration on the photoconductive spectrum of boron-doped silicon at helium temperatures was investigated. Photoconductivity was observed for excitations of the bound hole into the impurity excited states. The photoconductivity in this region depends strongly on impurity concentration and was interpreted as being conduction through excited state impurity bands. Two bands were observed to form, with excited states 3 and 4 in the boron spectrum forming one band and state 2 forming the other. A qualitative description of the mobility in the impurity bands was obtained using Baltensperger's theory and the additional assumption that the holes are scattered by "randomness" in the impurity array. Photoconductivity of holes in the valence band was also measured in order to obtain lifetimes and capture cross sections. Assuming the mobility in this region to be determined by neutral impurity scattering, the hole lifetime was estimated to be ~ 10⁻⁹ sec and the capture cross section of ionized boron ~ 3 x 10⁻¹⁰ cm². Assuming similar lifetimes for the holes in impurity bands, the peak mobility in band 3 and 4 was found to be ~ 150 cm² /volt-sec. The d.c. characteristics of the various samples, while at low temperature and exposed to room temperature radiation, were measured during the course of this investigation. All samples were observed to have a non-linear dependence between the current and applied field, terminated by a non-destructive low field breakdown. / Science, Faculty of / Physics and Astronomy, Department of / Graduate

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