Aim of this work is to construct dye sensitized solar cells employing core shell type nanocrystalline FTO/TiO2 photoanodes. Fluorine doped tin dioxide (FTO) nanoparticles were synthesized under hydrothermal conditions. Homogeneously precipitated SnO2 nanoparticles were dispersed in aqueous solutions containing NH4F as fluorine source and heat treated at 180oC for 24 hours. X-Ray analysis revealed that particles show rutile type cassiterite structure. Particles had 50 m2/g specific surface area measured by BET. Particle size was around 15-20 nm verified by XRD, BET and SEM analysis. Electrical resistivity of the powders measured with four point probe technique was around 770 ohm.cm for an F/Sn atomic ratio of 5, which showed no further decrease upon increasing the fluorine content of solutions. Thick films were deposited by screen printing technique and SEM studies revealed that agglomeration was present in the films which decreased the visible light transmission measured by UV-Visible spectrophotometry. TiO2 shell coating was deposited by hydrolysis of ammonium hexafluorotitanate and TiCl4 aqueous solutions. Efficiency of FTO nanoparticles was enhanced upon surface treatment where best result was 4.61 % for cells treated with TiCl4. Obtained photocurrent of 22.8 mA/cm2 was considered to be very promising for the future work. Enhancement v in efficiency was mostly attributed to suppressed recombination of photoelectrons and it is concluded that improved efficiencies can be obtained after successful synthesis of FTO nanoparticles having lower resistivity values and deposition of homogeneous shell coatings.

The production of low cost, large area display systems requires a light emitting material compatible with the standard silicon (Si) based complementary metal oxide semiconductor (CMOS) technology. The crystalline bulk Si is an indirect band semiconductor with very poor optical properties. On the other hand, hydrogenated amorphous Si (a-Si:H) based wide gap alloys exhibit strong visible photoluminescence (PL) at room temperature, owing to the release of the momentum conservation law. Still, the electroluminescence (EL) intensity from the diodes based on these alloys is weak due to the limitation of the current transport by the localized states. In the frame of this work, first, the luminescent properties of amorphous silicon nitride (a-SiNx:H) thin films grown in a plasma enhanced chemical vapor deposition (PECVD) system were analyzed with respect to the nitrogen content. Then, the doping effciency of p- and n-type hydrogenated nanocrystalline Si (nc-Si:H) films was optimized via adjusting the deposition conditions. Next, the junction quality of these doped layers was checked and further improved in a homojunction pin diode. Heterojunction pin light emitting diodes (LEDs) were fabricated with a-SiNx:H as the luminescent active layer. The EL effciency of the fresh diodes was very low, as expected. As a solution, the diodes were electro-formed under high electric field leading to nanocrystallization accompanied by a strong visible light emission from the whole diode area. The current-voltage (I-V) and EL properties of these transformed diodes were investigated in detail.

The beam quality and the system efficiency of a diode-pumped solid-state laser source are directly related to the thermal profile inside the laser crystal. The thermal profile in a laser crystal should be made uniform in order to reduce the negative effects of the thermal lens. However, the absorbed pump profile that forms a uniform thermal profile inside the gain medium may adversely affect the system efficiency. In this thesis, a computational and empirical method was developed for designing pumping chambers that results in a suitable thermal profile inside the gain medium, and thus desired laser beam quality was achieved while keeping the system efficiency at an acceptable level. Accomplishment of this thesis work will lead to the design of pumping chambers and resonators in high power laser systems operating at even higher thermal loads.

Ternary chalcopyrite compounds are the semiconductors with suitable properties to be used as absorber materials in thin film solar cells. AgInSe2 is a promising candidate with its several advantages over the widely used CuInSe2. The purpose of this study was to optimize the physical properties of the Ag-In-Se (AIS) thin films that were deposited by e-beam evaporation of Ag3In5Se9 single crystal powder for solar cell applications by means of post-annealing process under nitrogen atmosphere. The as-grown AIS thin films were annealed at 200, 300 and 400oC and their structural, optical, electrical and photoelectrical properties were examined to observe the effects of post-annealing process. Structural characterization of the films was performed by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses. Optical properties of the films were investigated by optical transmittance measurements. Electrical and photoelectrical properties of the films were examined by temperature dependent conductivity, photoconductivity under different illumination intensities and spectral photoresponse measurements. It was discovered that the annealing of AIS thin films at 200oC resulted in the best physical properties for solar cell applications. The obtained films were polycrystalline with mixed binary and ternary crystalline phases, such as Ag3In5Se9, AgInSe2 and InSe, and showed n-type conductivity with room temperature conductivity value of 2.3x10-6 (Ohm&shy / cm)-1. The band gap energy of the 200oC-annealed films was determined as 1.68 eV from spectral photoresponse measurements. The results of the study revealed that the inadequate Ag incorporation and segregation and/or reevaporation of Se atoms at high annealing temperatures were the major problems encountered in producing single phase polycrystalline AgInSe2 thin films. The required stoichiometry of thin films should be maintained during the growth of the films by means of an alternative deposition procedure and the films should be selenized during post-annealing process.