This thesis examines second-order optical nonlinear wave mixing processes in domain-disordered quasi-phase matching waveguides and evaluates their potential use in compact, monolithically integrated wavelength conversion devices. The devices are based on a GaAs/AlGaAs superlattice-core waveguide structure with an improved design over previous generations. Quantum-well intermixing by ion-implantation is used to create the quasi-phase matching gratings in which the nonlinear susceptibility is periodically suppressed. Photoluminescence experiments showed a large band gap energy blue shift around 70 nm after intermixing. Measured two-photon absorption coefficients showed a significant polarization dependence and suppression of up to 80% after intermixing. Similar polarization dependencies and suppression were observed in three-photon absorption and nonlinear refraction. Advanced modeling of second-harmonic generation showed reductions of over 50% in efficiency due to linear losses alone. Self-phase modulation was found to be the dominant parasitic nonlinear effect on the conversion efficiency, with reductions of over 60%. Simulations of group velocity mismatch showed modest reductions in efficiency of less than 10%. Experiments on second-harmonic generation showed improvements in efficiency over previous generations due to low linear loss and improved intermixing. The improvements permitted demonstration of continuous wave second-harmonic generation for the first time in such structures with output power exceeding 1 µW. Also, Type-II phase matching was demonstrated for the first time. Saturation was observed as the power was increased, which, as predicted, was the result of self-phase modulation when using 2 ps pulses. By using 20 ps pulses instead, saturation effects were avoided. Thermo-optically induced bistability was observed in continuous wave experiments. Difference frequency generation was demonstrated with wavelengths from the optical C-band being converted to the L- and U-bands with continuous waves. Conversion for Type-I phase matching was demonstrated over 20 nm with signal and idler wavelengths being separated by over 100 nm. Type-II phase matched conversion was also observed. Using the experimental data for analysis, self-pumped conversion devices were found to require external amplification to reach practical output powers. Threshold pump powers for optical parametric oscillators were calculated to be impractically large. Proposed improvements to the device design are predicted to allow more practical operation of integrated conversion devices based on quasi-phase matching superlattice waveguides.

Le développement des réseaux optiques et l’augmentation des interconnexions à courtes distances, amènent un besoin croissant en transmetteurs émettant à 1,3 µm, performants, peu énergivores et fabriqués à bas coût.Ainsi, l’intégration photonique monolithique, qui vise à juxtaposer plusieurs fonctions optiques dans un même circuit, est une solution. L’épitaxie sélective en phase vapeur aux organo-métalliques est une technique prometteuse pour cela. Elle permet, en une seule étape de croissance, de définir les structures des différents composants unitaires constituant le circuit intégré photonique. Il est nécessaire d’avoir un outil de simulation qui permet de modéliser la croissance sélective. Auparavant la modélisation proposée ne prenait en compte que des phénomènes de diffusion en phase vapeur et négligeait les phénomènes de surface. Une modélisation plus précise a été développée, fondée sur la relaxation de l’interface. En parallèle, nous avons conçu sept différentes structures actives, à base de multi-puits quantiques en matériaux AlGaInAs pour des composants DML et EML émettant à 1.3 µm. Nous avons fait des mesures de laser à contacts larges et des mesures d’absorption en photo-courant, pour sélectionner la meilleure structure.Une étude expérimentale de la croissance, à partir de microscopie électronique en transmission et de micro-diffraction aux rayons X, a permis de réaliser l’épitaxie sélective de la structure sélectionnée. Les composants fabriqués ont des performances à l’état de l’art avec une bande passante de 12,5 GHz pour un DML de 250 µm ainsi qu’un diagramme de l’œil ouvert à 32 Gbit/s avec un taux d’extinction dynamique de 10 dB, pour en EML. / The development of passive optical networks and the increase of short-reach connections make an increasing need for efficient, energy-friendly and low-cost transmitters emitting at 1.3 µm.To this end, monolithic photonic integration, which aims to embed several optical functions into the same circuit, is a solution. Selective area growth (SAG) by metal-organic vapor-phase-epitaxy (MOVPE) seems to be an attractive technique to achieve this integration. This approach allows defining, in a single epitaxial step, the structures of the different unitary photonic functions constituting the photonic integrated circuit. One issue of this technique is the growth modeling, necessary to predict the material distribution. Previously, the model was only taking into account vapor phase diffusion phenomena, neglecting surface phenomena. Consequently a more accurate approach was developed, based on interface relaxation.Simultaneously, we designed seven different active structures, all based on AlGaInAs multi-quantum wells, in order to optimize the DML and EML devices emitting at 1.3µm . We performed wide area laser and photocurrent absorption measurements to select the best trade-off design for devices fabrication.In order to perform accurate SAG of the selected structure, experimental study has been done to optimize the growth using transmission electronic microscopy and X-ray micro-diffraction. Devices have been processed and exhibit state of the art performances. A bandwidth of 12.5 GHz was demonstrated for a 250 µm long DML and 32 Gbit/s open eye diagram with a 10 dB dynamic extinction ratio has been shown, on a EML with a 100 µm long EAM.

Les travaux de cette thèse portent sur le développement des Circuits Photoniques Intégrés issus de la plateforme d’intégration hétérogène de matériaux III-V sur silicium. Les avantages proposés par cette approche, dans laquelle le gain optique des matériaux III-V se marie aux faibles pertes de propagation des guides d’onde silicium, sont notamment les coûts réduits de fabrication, un haut degré de compacité, et une grande flexibilité dans les fonctionnalités réalisables. Dès lors, notre approche est basée sur l’exploitation de cette technologie pour la réalisation de dispositifs hybrides d’émission laser adressant les objectifs de performance à débits élevés des nouveaux réseaux de télécommunication à fibres optiques. Nous rappelons tout d’abord les transformations récentes amorcées dans les réseaux de télécommunication en vue de répondre à l’accroissement du trafic mondial de données, et présentons alors deux solutions techniques étudiées durant cette thèse. En premier lieu, nous détaillons l’architecture et les éléments de conception d’un émetteur à multiplexage en longueur d’onde (WDM) à 4 longueurs d’onde DFB et 4 Modulateurs à Electro-absorption intégrés dans un circuit photonique hybride III-V sur silicium. Ce circuit est destiné aux transmissions courtes distances (<2km) à 100Gb/s au sein des centres de données (datacenter). Nous avons plus particulièrement étudié l’optimisation de la transition modale entre la section de gain III-V de la cavité laser et le circuit passif de propagation en silicium, que ce soit pour des structures à base de puits ou de boîtes quantiques. L’emploi de ces architectures pour la conception de dispositif à N sources DFB, directement modulées, et à gestion du chirp intégrée, a également été abordé. Nous présentons alors les résultats des caractérisations statiques et dynamiques de ces sources lasers à 1,3µm ainsi que des modulateurs à électro-absorption (MEA) modulés jusqu’à 32Gb /s, et discutons des améliorations structurales que nous avons apportées en vue de renforcer les performances globales du dispositif. La seconde solution approfondie durant cette thèse porte sur les sources lasers accordables intégrant des résonateurs en anneaux, centrées à 1,55µm et directement modulables, en vue d’un déploiement au sein de la nouvelle génération de réseaux optiques passifs d’accès (NG-PON2). Après l’étude de la structure de ces composants, nos travaux sur les problématiques du comportement thermique, ainsi que sur la caractérisation des fonctionnalités d’accord en longueur d’onde et du comportement dynamique de ces cavités hybrides, sont développés. Ainsi, nous rapportons les performances d’un dispositif en boitier de démonstration que ces travaux ont permis de réaliser, pour des transmissions à 10Gbit/s en modulation directe jusqu’à 40km. Enfin, cette thèse s’achève par une conclusion générale et propose un aperçu des possibilités, à court et moyen termes, ouvertes par ces recherches. / The work conducted in this thesis focuses on the development of Photonic Integrated Circuits based on the technological platform of heterogeneous integration of III-V materials on silicon. The benefits brought by this approach, in which the optical gain from III-V materials is coupled with the low propagation losses of silicon waveguide, are in particular a low manufacturing cost, high compacity and scalabity, and a wide range of achievable functionalities. In this way, we aim to exploit this technology to develop hybrid laser devices which meet the performance objectives of high-bit-rate optical fiber transmission networks. From the recent transformations initiated in transmission networks to face the data global traffic increase, two technical solutions have been investigated during this thesis. First, we detail the architecture and the design elements of a WDM emitter with 4 DFB lasers and 4 Electro-Absorption Modulators integrated in a III-V on silicon hybrid Photonic Circuit. This circuit addresses short-distances 100Gb/s transmissions challenges (<2km) in datacenters applications. We specifically studied the optimization of modal transition from the III-V on silicon optical gain section of the laser cavity to the passive silicon circuit, for both quantum wells and quantum dots structure. The use of this architecture for the design of devices including N directly modulated DFB sources with integrated chirp management is also introduced. Static and dynamic characterization results of this laser source emitting at 1,3µm as well as the electro-absorption behavior at modulation rate up to 32Gb/s is reported . The improvement routes of the structure are also discussed to enhance device global performances. The second solution studied in this thesis is a directly modulated tunable laser source, emitting around 1.55µm with integrated ring resonators, for the deployment in the Next-Generation Passive Optical access Networks (NG-PON2). After the description of the structure, thermal problematic, wavelength tunability, and dynamic behavior of these hybrid cavities are presented. Finally, we report the performances of a packaged device for direct modulation transmissions at 10Gb/s over 40km. The thesis ends up with general conclusions, and provides an overview of the short and medium terms possibilities offered by this research.

In this paper, we present the design guidelines for a tunable optical isolator in an SOI-based ring resonator with two small time-modulated regions. By considering a physical model, the proper geometrical and modulation parameters are designed, based on a standard CMOS foundry process. The effect of the variation of the key parameters on the performance of the isolator is explained by two counter-acting mechanisms, namely the separation between the resonance frequencies of counter-rotating modes and energy transfer to the side harmonic. We show that there is a trade-off between these parameters to obtain maximum isolation. Consequently, by applying the quadrature phase difference one can obtain the maximum separation between the resonance frequencies and hence the minimum insertion loss, while the maximum isolation is obtained at the modulation phase difference of −0.78π , which leads to a higher insertion loss. Robustness of the design is investigated through a sensitivity analysis for the fabrication variations in the distance and width of the modulated regions. We demonstrate that there is a trade-off between isolation and insertion loss, and by varying the modulation parameters, we can achieve isolation of 18 (5) dB with 7 (1.8) dB insertion loss.

[EN] Microwave photonics (MWP) is a well-established research field that investigates the use of photonic technologies to generate, distribute, process and analyze RF waveforms in the optical domain. Despite its great potential to solve long-standing problems faced by both the microwave and electronics industries, MWP systems are bulky, expensive and consume a lot of power. Integrated microwave photonics (IMWP) is an emerging area of research that promises to alleviate most of these drawbacks through the use of photonic integrated circuits (PIC). In this work, we have aimed at further closing the gap between the worlds of MWP and integrated optics. In particular, we have focused on the design and experimental characterization of PICs with reconfigurable, ring-assisted Mach-Zehnder interferometer filters (RAMZI), and demonstrated its potential use in different IMWP applications. These filters consist of a symmetric MZI loaded with ring resonators, which are coupled to the MZI branches by different optical couplers. The contributions of this thesis can be split into two sections. In the first one, we demonstrate integrated optical couplers and reflectors with variable power splitting and reflections ratios. These exploit the well-known properties of tapered multimode interference couplers (MMI), and their inherent robustness makes them highly suitable for the implementation of both RAMZI and reflective filters. Besides, we study in detail the impact of manufacturing deviations in the performance of a 4x4 MMI-based 90º hybrid, which is a fundamental building block in coherent optical communication systems. In the second section, we demonstrate the use of integrated RAMZI filters for three different IMWP applications, including instantaneous frequency measurement (IFM), direct detection of frequency-modulated signals in a MWP link, as well as in tunable, coherent MWP filters. A theoretical analysis of the limits and trade-offs that exist in photonics-based IFM systems is also provided. Even though these are early proof-of-concept experiments, we hope that further technological developments in the field will finally turn MWP into a commercial reality. / [ES] La fotónica de microondas (MWP) es un campo de investigación que estudia el uso de tecnologías ópticas para generar, distribuir, procesar y analizar señales de RF. A pesar de su gran potencial para resolver algunos de los problemas a los que se enfrentan las industrias electrónica y de microondas, estos sistemas son voluminosos, caros y consumen mucha potencia. La fotónica de microondas integrada (IMWP) es un área emergente que promete solucionar todos estos inconvenientes a través de la utilización de circuitos ópticos integrados (PIC). En esta tesis, hemos pretendido avanzar un poco más en el acercamiento entre estas dos disciplinas. En concreto, nos hemos centrado en el diseño y caracterización experimental de PICs con filtros reconfigurables basados en interferómetros Mach-Zehnder cargados con anillos (RAMZI), y demostrado su potencial uso en diferentes aplicaciones de IMWP. Los filtros RAMZI están hecho básicamente de un MZI simétrico cargado con anillos, los cuales a su vez se acoplan a las ramas del interferómetro a través de distintos acopladores ópticos. Las contribuciones de este trabajo se pueden dividir en dos partes. En la primera, hemos demostrado acopladores y reflectores ópticos integrados con coeficientes de acoplo y reflexión variables. Éstos explotan las propiedades de los acopladores por interferencia multimodal (MMI), y su robustez les hace muy atractivos para la implementación de filtros RAMZI y de tipo reflectivo. Además, hemos analizado el impacto que las tolerancias de fabricación tienen en el rendimiento de un híbrido óptico de 90º basado en un MMI 4x4, el cual es un elemento fundamental en los sistemas de comunicaciones ópticas coherentes. En la segunda parte, hemos demostrado el uso de filtros RAMZI en tres aplicaciones distintas de IMWP. En concreto, hemos utilizado dichos filtros para implementar sistemas de medida de frecuencia instantánea (IFM), detección directa de señales moduladas en frecuencia para enlaces fotónicos, así como en filtros coherentes y sintonizables de MWP. También hemos desarrollado un análisis teórico de las limitaciones y problemas que existen en los sistemas IFM. A pesar de que todos los experimentos realizados han consistido en prototipos para una prueba de concepto, esperamos que futuros avances tecnológicos permitan que la fotónica de microondas se convierta algún día en una realidad comercial. / [CA] La fotònica de microones (MWP) és un camp d'investigació que estudia l'ús de tecnologies òptiques per a generar, distribuir, processar y analitzar senyals de radiofreqüència. A pesar del seu gran potencial per a resoldre alguns dels problemes als que s'enfronten les indústries electrònica i de microones, estos sistemes son voluminosos, cars i consumixen molta potència. La fotònica de microones integrada (IMWP) és un àrea emergent que promet solucionar tots estos inconvenients a través de la utilització de circuits òptics integrats (PIC). En esta tesi, hem pretés avançar un poc més en l'acostament entre estes dos disciplines. En concret, ens hem centrat en el disseny i caracterització experimental de PICs amb filtres reconfigurables basats en interferòmetres Mach-Zehnder carregats amb anells (RAMZI), i demostrat el seu potencial en diferents aplicacions d' IMWP. Els filtres RAMZI estan fets bàsicament d'un MZI simètric carregat amb anells, els quals, al seu torn, s'acoblen a les branques del interferòmetre a través de distints acobladors òptics. Les contribucions d'este treball es poden dividir en dos parts. En la primera, hem demostrat acobladors i reflectors òptics integrats amb coeficients de transmissió i reflexió variables. Estos exploten les propietats dels acobladors per interferència multimodal (MMI), i la seua robustesa els fa molt atractius per a la implementació de filtres RAMZI i de tipo reflectiu. A més a més, hem analitzat l'impacte que les toleràncies de fabricació tenen en el rendiment d'un híbrid òptic de 90 graus basat en un MMI 4x4, el qual és un element fonamental en els sistemes de comunicacions òptiques coherents. En la segona part, hem demostrat l'ús de filtres RAMZI en tres aplicacions diferents de IMWP. En concret, hem utilitzat estos filtres per a implementar sistemes de mesura de freqüència instantània (IFM), detecció directa de senyals modulades en freqüència per a enllaços fotònics, així com en filtres coherents i sintonitzables de MWP. També hem desenvolupat una anàlisi teòrica de les limitacions i problemes que existixen en els sistemes IFM. A pesar de que tots els experiments realitzats han consistit en prototips per a una prova de concepte, esperem que futurs avanços tecnològics permeten que la fotònica de microones es convertisca algun dia en una realitat comercial. / Sánchez Fandiño, JA. (2016). Integrated Optical Filters for Microwave Photonic Applications [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/67690

El silicio es la plataforma más prometedora para la integración fotónica, asegurando la compatibilidad con los procesos de fabricación CMOS y la producción en masa de dispositivos a bajo coste. Durante las últimas décadas, la tecnología fotónica basada en la plataforma de silicio ha mostrado un gran crecimiento, desarrollando diferentes tipos de dispositivos ópticos de alto rendimiento. Una de las posibilidades para continuar mejorando las prestaciones de los dispositivos fotónicos es mediante la combinación con otras tecnologías como la plasmónica o con nuevos materiales con propiedades excepcionales y compatibilidad CMOS. Las tecnologías híbridas pueden superar las limitaciones de la tecnología de silicio, dando lugar a nuevos dispositivos capaces de superar las prestaciones de sus homólogos electrónicos. La tecnología híbrida dióxido de vanadio/ silicio permite el desarrollo de dispositivos de altas prestaciones, con gran ancho de banda, mayor velocidad de operación y mayor eficiencia energética con dimensiones de la escala de la longitud de onda. El objetivo principal de esta tesis ha sido la propuesta y desarrollo de dispositivos fotónicos de altas prestaciones para aplicaciones de conmutación. En este contexto, diferentes estructuras basadas en silicio, tecnología plasmónica y las propiedades sintonizables del dióxido de vanadio han sido investigadas para controlar la polarización de la luz y para desarrollar otras funcionalidades electro-ópticas como la modulación. / Silicon is the most promising platform for photonic integration, ensuring CMOS fabrication compatibility and mass production of cost-effective devices. During the last decades, photonic technology based on the Silicon on Insulator (SOI) platform has shown a great evolution, developing different sorts of high performance optical devices. One way to continue improving the performance of photonic optical devices is the combination of the silicon platform with another technologies like plasmonics or CMOS compatible materials with unique properties. Hybrid technologies can overcome the current limits of the silicon technology and develop new devices exceeding the performance metrics of its counterparts electronic devices. The vanadium dioxide/silicon hybrid technology allows the development of new high-performance devices with broadband performance, faster operating speed and energy efficient optical response with wavelength-scale device dimensions. The main goal of this thesis has been the proposal and development of high performance photonic devices for switching applications. In this context, different structures, based on silicon, plasmonics and the tunable properties of vanadium dioxide, have been investigated to control the polarization of light and for enabling other electro-optical functionalities, like optical modulation. / El silici és la plataforma més prometedora per a la integració fotònica, assegurant la compatibilitat amb els processos de fabricació CMOS i la producció en massa de dispositius a baix cost. Durant les últimes dècades, la tecnologia fotònica basada en la plataforma de silici ha mostrat un gran creixement, desenvolupant diferents tipus de dispositius òptics d'alt rendiment. Una de les possibilitats per a continuar millorant el rendiment dels dispositius fotònics és per mitjà de la combinació amb altres tecnologies com la plasmònica o amb nous materials amb propietats excepcionals i compatibilitat CMOS. Les tecnologies híbrides poden superar les limitacions de la tecnologia de silici, donant lloc a nous dispositius capaços de superar el rendiment dels seus homòlegs electrònics. La tecnologia híbrida diòxid de vanadi/silici permet el desenvolupament de dispositius d'alt rendiment, amb gran ample de banda, major velocitat d'operació i major eficiència energètica en l'escala de la longitud d'ona. L'objectiu principal d'esta tesi ha sigut la proposta i desenvolupament de dispositius fotònics d'alt rendiment per a aplicacions de commutació. En este context, diferents estructures basades en silici, tecnologia plasmònica i les propietats sintonitzables del diòxid de vanadi han sigut investigades per a controlar la polarització de la llum i per a desenvolupar altres funcionalitats electró-òptiques com la modulació. / Sánchez Diana, LD. (2016). High performance photonic devices for switching applications in silicon photonics [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/77150

<p dir="ltr">This thesis presents novel methodologies to integrate AI-driven and physics-inspired methodologies into photonic inverse design, setting new benchmarks for high-performance photonic devices in different branches of photonics. By blending advanced computational techniques with the foundational principles of electromagnetism, this research tackles key challenges in optimizing device efficiency, robustness, and functionality. The aim is to propel photonic technology beyond its current capabilities, offering transformative solutions for a range of novel applications.</p><p dir="ltr">The first major contribution focuses on adjoint-based topology optimization for on-chip single-photon coupling. We developed an adjoint topology optimization scheme to design high-efficiency couplers between photonic waveguides and single-photon sources (SPSs) in hexagonal boron nitride (hBN). This algorithm addresses fabrication constraints and SPS location uncertainties, achieving a remarkable average coupling efficiency of 78%. A library of designs is generated for different positions of the hBN flake containing an SPS relative to a silicon nitride (SiN) waveguide. These designs are then analyzed using dimensionality reduction techniques to investigate the relationship between device geometry and performance, infusing the design process with deep physical intuition and insight.</p><p dir="ltr">The second key advancement is presented through a neural network-based inverse design framework specifically developed for optimizing single-material, variable-index multilayer films. This neural network-driven technique, supported by a differentiable analytical solver, enables the realistic design and fabrication of these multilayer films, achieving high performance under ideal conditions. The approach also addresses the challenge of bridging the gap between these ideal designs and practical devices, which are subject to growth-related imperfections. By incorporating simulated systematic and random errors—reflecting actual deposition challenges—into the optimization process, we demonstrate that the neural network, initially trained to produce the ideal device, can be reconfigured to create designs that compensate for systematic deposition errors. This method remains effective even when random fabrication inconsistencies are present. The results provide a practical and experimentally viable strategy for developing single-material multilayer film stacks, ensuring reliable performance across a wide range of real-world applications.</p><p dir="ltr">The final cornerstone of this research investigates the two-stage inverse design of superchiral dielectric metasurfaces. We propose a two-stage inverse design scheme for dielectric lossless metasurfaces with central superchiral hot spots. By leveraging the excitation of high-quality factor modes with low mode volumes, we achieve up to 19,000-fold enhancements of optical chirality. This method extends the local density of field enhancements for non-chiral fields into the chiral regime and significantly surpasses previous enhancements in superchiral field generation. Our results open new avenues in chiral spectroscopy and chiral quantum photonics, exemplifying the powerful synergy of AI techniques and physics-based design principles in creating highly innovative and functional photonic structures.</p><p dir="ltr">Collectively, the methodologies developed in this thesis signify a major advancement in the field of photonic inverse design. By merging AI-driven techniques with rigorous physics-based optimization frameworks, this research paves the way for the next generation of photonic devices.</p>

Les futurs calculateurs de haute performance (HPC) devront faire face à deux défis majeurs : la densité de la bande passante d'interconnexion et les problématiques de consommation d'énergie. La photonique silicium est aujourd’hui perçue comme une solution solide pour aborder ces questions, tant du fait de ses performances que de sa viabilité économique en raison de sa compatibilité directe avec la microélectronique CMOS. Actuellement, une tendance de fond conduit à remplacer les interconnexions métalliques par des liens optiques ; cette évolution a été initiée sur des liaisons grandes distances mais atteint actuellement le niveau des liaisons entre cartes électroniques et pourrait conduire à moyen terme à l’intégration de liens optiques au sein mêmes des circuits intégrés électroniques. La prochaine étape est en effet envisagée pour l'interconnexion des processeurs au sein de puces multi-cœurs en positionnant les liens photoniques sur un même support de silicium (« interposer »). Plusieurs travaux ont démontré la possibilité d'intégrer tous les éléments nécessaires pour la réalisation de liaisons optiques sur un substrat de silicium ouvrant des perspectives de co-intégration optique et électronique très riches.Dans ce contexte, la première contribution de cette thèse est l'optimisation d'un lien de photonique de silicium en terme d'efficacité énergétique par bit (à minimiser). L'optimisation que nous avons conduite a pris en compte une modélisation de la consommation d'énergie pour le laser de la liaison, celle de l’étape dé-sérialisation des données, du résonateur en anneau considéré comme modulateur optique et des circuits de réception (« front-end ») et de décision. Les résultats ont montré que les principales contributions à la consommation de puissance au sein d’un lien optique sont la puissance consommée par le laser et les circuits d’alimentation du modulateur électro-optique. En considérant des paramètres de consommation extraits de simulations numériques et de travaux publiés dans des publications récentes, le débit optimal identifié se trouve dans la plage comprise entre 8 Gbits/seconde et 22 Gbits/seconde selon le nœud technologique CMOS utilisé (65nm à 28nm FD SOI). Il est également apparu qu’une diminution de la consommation de puissance statique du modulateur utilisé pourrait encore ramener ce débit optimal en-dessous de 8 Gbits/seconde.Afin de vérifier ces résultats, un circuit intégré récepteur de liaison optique a été conçu et fabriqué en se basant sur un débit de fonctionnement de 8 Gbits/seconde. Le récepteur utilise une technique d’entrelacement temporel destinée à réduire la vitesse d'horloge nécessaire et à éviter potentiellement l’étape de dé-sérialisation dédiée des informations. / Future high performance computer (HPC) systems will face two major challenges: interconnection bandwidth density and power consumption. Silicon photonic technology has been proposed recently as a cost-effective solution to tackle these issues. Currently, copper interconnections are replaced by optical links at rack and board level in HPCs and data centers. The next step is the interconnection of multi-core processors, which are placed in the same package on silicon interposers, and define the basic building blocks of these computers. Several works have demonstrated the possibility of integrating all elements needed for the realization of short optical links on a silicon substrate.The first contribution of this thesis is the optimization of a silicon photonic link for highest energy efficiency in terms of energy per bit. The optimization provides energy consumption models for the laser, a de- and serialization stage, a ring resonator as modulator and supporting circuitry, a receiver front-end and a decision stage. The optimization shows that the main consumers in optical links is the power consumed by the laser and the modulator's supporting circuitry. Using consumption parameters either gathered by design and simulation or found in recent publications, the optimal bit rate is found in the range between 8 Gbps and 22 Gbps, depending on the used CMOS technology. Nevertheless, if the static power consumption of modulators is reduced it could decrease even below 8 Gbps.To apply the results from the optimization an optical link receiver was designed and fabricated. It is designed to run at a bit rate of 8 Gbps. The receiver uses time interleaving to reduce the needed clock speed and aleviate the need of a dedicated deserialization stage. The front-end was adapted for a wide dynamic input range. In order to take advantage of it, a fast mechanism is proposed to find the optimal threshold voltage to distinguish ones from zeros.Furthermore, optical clock channels are explored. Using silicon photonics a clock can be distributed to several processors with very low skew. This opens the possibility to clock all chips synchronously, relaxing the requirements for buffers that are needed within the communication channels. The thesis contributes to this research direction by presenting two novel optical clock receivers. Clock distribution inside chips is a major power consumer, with small adaptation the clock receivers could also be used inside on-chip clocking trees.

Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden.Engineering of defects in the PhC lattice offers new ways toconfine and guide light. PhCs have been manufactured usingsemiconductors and other material technologies. This thesisfocuses on two-dimensional PhCs etched in InP-based materials.Only recently, such structures were identified as promisingcandidates for the realization of novel and advanced functionsfor optical communication applications. The primary focus was on fabrication and characterization ofPhC structures in the InP/GaInAsP/InP material system. Thedemands on fabrication are very high: holes as small as100-300nm in diameter have to be etched at least as deep as 2µm. Thus, different etch processes had to be explored andspecifically developed for InP. We have implemented an etchingprocess based on Ar/Cl2chemically assisted ion beam etching (CAIBE), thatrepresents the state of the art PhC etching in InP. Different building blocks were manufactured using thisprocess. A transmission loss of 10dB/mm for a PhC waveguide, areflection of 96.5% for a 4-row mirror and a record qualityfactor of 310 for a 1D cavity were achieved for this materialsystem. With an etch depth of 4.5 µm, optical loss wasfound to be close to the intrinsic limit. PhC-based opticalfilters were demonstrated using (a) a Fabry-Pérot cavityinserted in a PhC waveguide and (b) a contra-directionalcoupler. Lag effect in CAIBE was utilized positively to realizehigh quality PhC taper sections. Using a PhC taper, a couplingefficiency of 70% was demonstrated from a standard ridgewaveguide to a single line defect PhC waveguide. During the course of this work, InP membrane technology wasdeveloped and a Fabry-Pérot cavity with a quality factorof 3200 was demonstrated. Keywords:photonic crystals, photonic bandgap materials,indium phosphide, dry etching, chemically assisted ion beametching, reactive ion etching, electron beam lithography,photonic integrated circuits, optical waveguides, resonantcavities, optical filtering, finite difference time domain,plane wave expansion.

<p>Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden.Engineering of defects in the PhC lattice offers new ways toconfine and guide light. PhCs have been manufactured usingsemiconductors and other material technologies. This thesisfocuses on two-dimensional PhCs etched in InP-based materials.Only recently, such structures were identified as promisingcandidates for the realization of novel and advanced functionsfor optical communication applications.</p><p>The primary focus was on fabrication and characterization ofPhC structures in the InP/GaInAsP/InP material system. Thedemands on fabrication are very high: holes as small as100-300nm in diameter have to be etched at least as deep as 2µm. Thus, different etch processes had to be explored andspecifically developed for InP. We have implemented an etchingprocess based on Ar/Cl₂chemically assisted ion beam etching (CAIBE), thatrepresents the state of the art PhC etching in InP.</p><p>Different building blocks were manufactured using thisprocess. A transmission loss of 10dB/mm for a PhC waveguide, areflection of 96.5% for a 4-row mirror and a record qualityfactor of 310 for a 1D cavity were achieved for this materialsystem. With an etch depth of 4.5 µm, optical loss wasfound to be close to the intrinsic limit. PhC-based opticalfilters were demonstrated using (a) a Fabry-Pérot cavityinserted in a PhC waveguide and (b) a contra-directionalcoupler. Lag effect in CAIBE was utilized positively to realizehigh quality PhC taper sections. Using a PhC taper, a couplingefficiency of 70% was demonstrated from a standard ridgewaveguide to a single line defect PhC waveguide.</p><p>During the course of this work, InP membrane technology wasdeveloped and a Fabry-Pérot cavity with a quality factorof 3200 was demonstrated.</p><p><b>Keywords:</b>photonic crystals, photonic bandgap materials,indium phosphide, dry etching, chemically assisted ion beametching, reactive ion etching, electron beam lithography,photonic integrated circuits, optical waveguides, resonantcavities, optical filtering, finite difference time domain,plane wave expansion.</p>