For an idealized one-dimensional crystal it is possible to have energy levels whose wave functions are localized at the surface. These states are called surface states. There is one surface state for each energy gap between the ordinary allowed bands of energies. These electron states are called Tamm states. This Tamm state has an energy that lies almost at the middle of the energy gap and is mainly localized at the surface atomic layer. The image potential states are generated by a potential well formed by the Coulomb-like image potential barrier. These image states that are also called Shockley states are localized in a slowly decaying tail in the vacuum. I also studied the lateral (in-plane) motion of electrons confined to terraces between steps on a vicinal Cu (111) surface. The local density of states showed a number of peaks at energies where electrons can occupy new quantum-well states on a step. I also tested the influence of the electron lifetime on the local density of states.

Brownian motion conned in a two dimensional channel with varying crosssectionunder the inuence of an external force eld is examined. In particular,a one dimensional equation approximately describing the dynamics of the Brownianparticles is derived, a generalization of the well known Fick-Jacobs equation.This generalized Fick-Jacobs equation is numerically veried by Browniandynamics simulations for a special case of the external force eld. Furthermorethe generalized Fick-Jacobs equation is investigated in the context of stochasticthermodynamics.

This thesis investigates the effect of point defects (nitrogen vacancies and interstitials) and multilayering ((Ti,Al)N/TiN) on the phase transformations in cathodic arc-evaporated cubic (Ti,Al)N thin films at elevated temperatures. Special attention is paid to the evolution of the beneficial spinodal decomposition into c-TiN and c-AlN, the detrimental formation of wurtzite AlN and the potential application as hard coating in cutting tools. c-(Ti1-xAlx)Ny thin films with varying Al fractions and N content (y = 0.93 to 0.75) show a delay in the spinodal decomposition when increasing the amount of N vacancies. This results in a 300 °C upshift in the age hardening and a delay in the w-AlN formation, while additions of self-interstitials enhance phase separation. High temperature interaction between hard metal substrates and thin films is more pronounced when increasing N deficiency through diffusion of substrate elements into the film. Low N content films (y = 0.58 to 0.40) showed formation of additional phases such as Ti4AlN3, Ti2AlN, Al5Ti2 and Al3Ti during annealing and a transformation from Ti2AlN to Ti4AlN3 via intercalation. The multilayer structure of TiN/TiAlN results in surfacedirected spinodal decomposition that affects the decomposition behavior. Careful use of these effects appears as a promising method to improve cutting tool performance. / Diese Arbeit untersucht den Effekt von Punktdefekten (Stickstoffleerstellen und Zwischengitteratome) und Multilagen ((Ti,Al)N/TiN) auf die Phasenumwandlung in lichtbogenverdampften kubischen (Ti,Al)N-Dünnschichten bei erhöhten Temperaturen. Besonderes Augenmerk liegt auf der Entwicklung der vorteilhaften spinodalen Entmischung in c-TiN und c-AlN und der nachteiligen Bildung von Wurtzit-AlN, sowie der möglichen Anwendung als Hartstoffbeschichtung von Schneidwerkzeugen. c-(Ti1-xAlx)Ny mit unterschiedlichem Al-Anteil und N-Gehalten von y = 0,93 bis 0,75 zeigt mit zunehmenden Stickstoffleerstellen eine Verzögerung der spinodalen Entmischung. Dadurch verschiebt sich die Ausscheidungshärtung um 300 °C zu höheren Temperaturen und die w-AlN-Bildung wird verzögert, während der Einbau von Eigenzwischengitteratomen die Entmischung beschleunigt. Die Hochtemperaturwechselwirkung zwischen Hartmetallsubstrat und Dünnschicht durch Diffusion von Substratelementen in die Schicht nimmt mit steigendem Stickstoffdefizit zu. Stickstoffarme Schichten (y = 0,58 bis 0,40) zeigen während der Wärmebehandlung zusätzliche Phasen wie Ti4AlN3, Ti2AlN, Al5Ti2 und Al3Ti und eine Umwandlung von Ti2AlN in Ti4AlN3 durch Interkalation. Die Multischichtstruktur von TiN/TiAlN führt zu einer oberflächengerichteten spinodalen Entmischung, die das Entmischungsverhalten beeinflusst. Ein gezielter Einsatz dieser Effekte erscheint als ein vielsprechender Weg, um die Leistungsfähigkeit von Schneidwerkzeugen zu verbessern. / I denna avhandling behandlas inverkan av punktdefekter (kvävevakanser och interstitialer) och multilagring ((Ti,Al)N/TiN) på högtemperaturfasomvandlingar i tunna arcförångade skikt av kubiska (Ti,Al)N. Störst vikt har lagts på utvecklingen av det fördelaktiga spinodala sönderfallet till c-TiN och c-AlN, den ofördelaktiga omvandlingen till w-AlN och potentialen som hårda skikt i verktygstillämpningar. Tunna c-(Ti1-xAlx)Ny skikt med olika Al-andel och en N-halt mellan (y = 0.93 och 0.75) uppvisar ökad undertryckning av det spinodala sönderfallet med ökat kvävevakanshalt. Detta resulterar i bildandet av w-AlN skiftas upp i temperatur vilket gör att åldershärdningen höjs med 300 °C. Däremot medför närvaron av självinterstitialer ett snabbare sönderfall. Växelverkan mellan hårdmetallsubstraten och de tunna skikten vid hög temperatur ökar med minskad kvävehalt i skiten genom diffusion av atomer från substratet in i filmen. Filmer med låg kvävehalt (y = 0.58 till 0.40) bildar även andra faser så som Ti4AlN3, Ti2AlN, Al5Ti2 och Al3Ti under värmebehandling och fasomvandlingen från Ti2AlN till Ti4AlN3 sker via en mekanism kallad intercalation. Multilagring av TiN/TiAlN resulterar i ett ytriktad spinodalt sönderfall vilket påverkar det totala sönderfallsförloppet. Nyttjande av dessa resultat syns som lovande vägar till förbättrade verktygsegenskaper.

Organic photovoltaic (OPV) devices based on semiconducting polymers and small molecules allow for a low cost alternative to inorganic solar cells. Recent developments show power conversion efficiencies as high as 10-12%, highlighting the potential of this technology. Nevertheless, further improvements are necessary to achieve commercialization. To a large extent the performance of these devices is dictated by their ability to extract the photo-generated charge, which is related to the charge carrier mobility. Various time-resolved and steady-state techniques are available to probe the charge carrier mobility in OPVs but often lead to different mobility values for one and the same system. Despite such conflicting observations it is generally assumed that charge transport in OPV devices can be described by well-defined charge carrier mobilities, typically obtained using a single steady-state technique. This thesis shows that the relevance of such well-defined mobilities for the charge separation and extraction processes is very limited. Although different transient techniques probe different time scales after photogeneration, they are mutually consistent as they probe the same physical mechanism governing charge motion – gradual thermalization of the photo-generated carriers in the disorder broadened density of states (DOS). The photo-generated carriers gradually lose their excess energy during transport to the extracting electrodes, but not immediately. Typically not all excess energy is dissipated as the photo-generated carriers tend to be extracted from the OPV device before reaching quasi-equilibrium. Carrier motion is governed by thermalization, leading to a time-dependent carrier mobility that is significantly higher than the steady-state mobility. This picture is confirmed by several transient techniques: Time-resolved Terahertz Spectroscopy (TRTS), Time-resolved Microwave Conductance (TRMC) combined with Transient Absorption (TA), electrical extraction of photo-induced charges (photo-CELIV). The connection between transient and steady-state mobility measurements (space-charge limited conductivity, SCLC) is described. Unification of transient opto-electric techniques to probe charge motion in OPVs is presented. Using transient experiments the distribution of extraction times of photo-generated charges in an operating OPV device has been determined and found to be strongly dispersive, spanning several decades in time. In view of the strong dispersion in extraction times the relevance of even a well-defined time-dependent mean mobility is limited. In OPVs a continuous ‘percolating’ donor network is often considered necessary for efficient hole extraction, whereas if the network is discontinuous, hole transport is thought to deteriorate significantly, limiting device performance. Here, it is shown that even highly diluted donor sites (5.7-10 %) in a buckminsterfullerene (C60) matrix enable reasonably efficient hole transport. Using transient measurements it is demonstrated that hole transport between isolated donor sites can occur by long-range hole tunneling (over distances of ~4 nm) through several C60 molecules – even a discontinuous donor network enables hole transport

No description available.

No description available.

A complete laser cooling setup was built, with focus on threedimensional near-resonant optical lattices for cesium. These consist of regularly ordered micropotentials, created by the interference of four laser beams. One key feature of optical lattices is an inherent ”Sisyphus cooling” process. It efficiently extracts kinetic energy from the atoms, leading to equilibrium temperatures of a few µK. The corresponding kinetic energy is lower than the depth of the potential wells, so that atoms can be trapped. We performed detailed studies of the cooling processes in optical lattices by using the time-of-flight and absorption-imaging techniques. We investigated the dependence of the equilibrium temperature on the optical lattice parameters, such as detuning, optical potential and lattice geometry. The presence of neighbouring transitions in the cesium hyperfine level structure was used to break symmetries in order to identify, which role “red” and “blue” transitions play in the cooling. We also examined the limits for the cooling process in optical lattices, and the possible difference in steady-state velocity distributions for different directions. Moreover, in collaboration with ´Ecole Normale Sup´erieure in Paris, numerical simulations were performed in order to get more insight in the cooling dynamics of optical lattices. Optical lattices can keep atoms almost perfectly isolated from the environment and have therefore been suggested as a platform for a host of possible experiments aimed at coherent quantum manipulations, such as spin-squeezing and the implementation of quantum logic-gates. We developed a novel way to trap two different cesium ground states in two distinct, interpenetrating optical lattices, and to change the distance between sites of one lattice relative to sites of the other lattice. This is a first step towards the implementation of quantum simulation schemes in optical lattices.

The differential cross-section and polarization observables in the process γ + p --> K++ Λ are studied within an isobaric approach that includes resonances with total angular momentum J ≤ 5/2 over a center of mass energy range from W = 1.6 GeV to W=2.6 GeV. The model is used to fit recent experimental data as a function of the coupling products at the photon and strong vertices for the well established low energy resonances, as well as the total decay width for the high energy less well-established resonances. The model employed in this study is based on an effective hadronic lagrangian using a tree-level approximation. The model uses Feynman diagrammatic techniques to extract the interaction vertices at a first order level in perturbation theory. To extract the coupling strength products involved in the reaction, a X2- minimization technique is used to fit experimental data. The results suggests that both differential cross-section and double polarization observables need to be fit simultaneously to obtain an accurate description of the data. In addition, it was found that while resonances with angular momentum J= 5/2 do not couple strongly to the KΛ channel, higher energy states with J = 3/2 do couple strongly to the KΛ channel and are highly relevant for an accurate description of the data at energies beyond 1.9 GeV.

No description available.

No description available.