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The ability to model ground-state properties in density function theory (DFT) is a ected by the theoretical treatment of the electrons and the numerical approach to the theory. The electron-electron interaction energy is approximated by exchange- correlation (XC) functionals which are functions of the electron density. Popular functionals include the localized density approximation (LDA) or one of many gen- eralized gradient approximations (GGA). The numerical approaches used are the core-electron approximating pseudopotential (PsP) or the more accurate all-electron (AE) method. We test whether PsP calculations for some new GGA's can accurately reproduce AE values for cohesive energy, lattice constant, and bulk modulus for six- teen solids. We compare our PsP results to AE results for several XC functionals and gauge the quality of functionals by comparison to experiment. This allows us to determine which errors are caused by functionals and which are caused by PsP's.

Semiconductor superlattices and alloys based on III-V semiconductors have important applications in the design of optoelectronic devices in particular photodetectors. Understanding the electronic properties of such system is critical to be able to properly design and optimize the performance of such devices. Atomistic modelling is the most suitable approach to understand the microscopic properties of these systems. While density functional theory (DFT) is the approach of choice for many studies, it cannot be applied to systems comprised of a large number of atoms. The goal of this thesis is to explore the possibility of applying the empirical pseudopotential method associate with hybrid pseudopotential method to compute the electronic structure and optical properties of Ga_xAl_1-xAs alloy. The proposed work will address first the derivation of portable continuous screened atomic pseudopotentials for the constituent atoms. These will be validated using calculation on small systems. Subsequently, the atomic pseudopotential will be used to study Ga_xAl_1-xAs alloy with different microstructure.

Nanostructures often possess unique properties, which may lead to the development of new microelectronic and optoelectronic devices. They also provide an opportunity to test fundamental quantum mechanical concepts such as the role of quantum confinement. Considerable effort has been made to understand the electronic and structural properties of nanostructures, but many fundamental issues remain. In this work, the electronic and structural properties of nanostructures are examined using several new computational methods. The effect of dimensional confinement on quantum levels is investigated for hydrogenated Ge <110> using the plane-wave density-functional-theory pseudopotential method. We present a real-space pseudopotential method for calculating the electronic structure of one-dimensional periodic systems such as nanowires. As an application of this method, we examine H-passivated Si nanowires. The band structure and heat of formation of the Si nanowires are presented and compared to plane wave methods. Our method is able to offer the same accuracy as the traditional plane wave methods, but offers a number of computational advantages such as the ability to handle large systems and a better ease of implementation for highly parallel platforms. Doping is important to many potential applications of nano-regime semiconductors. A series of first-principles studies are conducted on the P-doped Si <110> nanowires by the real-space pseudopotential methods. Nanowires of varied sizes and different doping positions are investigated. We calculate the binding energies of P atoms, band gaps of the wires, energetics of P atoms in different doping positions and core-level shift of P atoms. Defect wave functions of P atoms are also analyzed. In addition, we study the electronic properties of phosphorus-doped silicon <111> nanofilms using the real-space pseudopotential method. Nanofilms with varied sizes and different doping positions are investigated. We calculate the binding energies of P atoms, band gaps of the films, and energetics of P atoms in different doping positions. Quantum confinement effects are compared with P-doped Si nanocrystals and as well as nanowires. We simulate the nanofilm STM images with P defects in varied film depths, and make a comparison with the experimental measurement. / text

A method of generating and testing pseudopotentials will be presented. This required the development of PPTester, a custom software program to analyze and quantify various parameters. These methods were first used to study bulk Si and verify the installation and performance of SIESTA. Plots, which agreed with published results, for band gap and charge density were generated.Next, pseudopotentials for Cd and Se were constructed and tested. Two separate Cd potentials were evaluated. Electronic structure calculations for two, four and six atom small cadmium selenide (CdSe) colloidal quantum dots were performed. The changes in geometry of initial versus relaxed atomic positions of these systems were evaluated. Output values of the electronic structure calculation, for example Fermi energy, were analyzed. / Department of Physics and Astronomy

Thesis (Ph.D.)--Wake Forest University. Dept. of Physics, 2006. / Vita. Includes bibliographical references (leaves 90-95)

Thesis (Ph. D.)--University of Washington, 2003. / Vita. Includes bibliographical references (leaves 86-90).

Το οξείδιο του ψευδαργύρου είναι ένας ημιαγωγός της ομάδας II-VI και έχει μεγάλη ποικιλία σε τεχνολογικές εφαρμογές όπως οι αισθητήρες διαφόρων χημικών αερίων, τα lasers, οι δίοδοι εκπομπής φωτός, οι νανο-γεννήτριες, τα ηλιακά κύτταρα και πολλές άλλες. Το ευρύ του ενεργειακό κενό (3.445 eV) το καθιστά ένα πολλά υποσχόμενο υλικό για φωτονικές εφαρμογές στην περιοχή του UV ή του ιώδους, ενώ ταυτόχρονα η υψηλή ενέργεια συνοχής του εξιτονίου που το χαρακτηρίζει (περίπου στα 60 meV) επιτρέπει την αποτελεσματική εξιτονική εκπομπή σε θερμοκρασία δωματίου. Οι πιο πρόσφατες εξελίξεις στον τομέα του νανοδομημένου ZnO είναι οι νανοδρόμοι, οι νανογέφυρες, οι νανοπροπέλες, οι νανοδακτύλιοι, τα νανονήματα κ.α. Στην παρούσα διπλωματική εργασία μελετώνται οι ηλεκτρονιακές και οπτικές ιδιότητες νανονημάτων οξειδίου του ψευδαργύρου (ZnO) για ένα εύρος διαμέτρων από 2 έως 6 nm και με την βοήθεια της εμπειρικής μεθόδου των ψευδοδυναμικών και της Configuration Interaction (CI). Μια ανασκόπηση των ιδιοτήτων και χαρακτηριστικών του bulk ZnO, όπως η κρυσταλλική και η ενεργειακή του δομή, κάποιες τεχνολογικές εφαρμογές και μέθοδοι ανάπτυξης δίνονται στο πρώτο κεφάλαιο. Το δεύτερο κεφάλαιο περιέχει την περιγραφή διαφόρων υπολογιστικών μεθόδων όπως της προσέγγισης ενεργούς μάζας ( Effective Mass Approximation), της θεωρίας του συναρτησιακού της πυκνότητας (Density Functional Theory) και τέλος, της εμπειρικής μεθόδου των ψευδοδυναμικών που χρησιμοποιείται στους υπολογισμούς των ηλεκτρονιακών και οπτικών ιδιοτήτων των νανοδομών που μελετάμε. Στο τρίτο και τελευταίο κεφάλαιο, παρατίθενται τα αριθμητικά αποτελέσματα . Αυτά, αφορούν στο εξαρτώμενο από το μέγεθος, οπτικό ενεργειακό κενό, το Stokes shift, και το φάσμα φωτοφωταύγειας. Στο τέλος του κεφαλαίου περιγράφονται τα συμπεράσματα. / Zinc oxide (ZnO), a typical group II-VI compound, has a great variety of device applications, such as chemical sensors, lasers, light-emitting diodes, nanogenerators, solar cells and so forth. The wide band gap (3.445 eV) makes it a promising material for photonic applications in the UV or the blue range, while the high exciton binding energy (around 60 meV at room temperature) allows efficient excitonic emission at room temperature. The most recent developments are towards the nanostructured ZnO, such as nanorods, nanobridges, nanopropellers, nanorings, nanowires, et al. In the present master thesis, the electronic and optical properties of ZnO nanowires within the range of 2-6 nm in diameter are studied by means of atomistic empirical pseudopotential method and configuration interaction. A review of the bulk ZnO, such as the crystal and band structures, technological applications and synthesis methods, is presented in chapter one. The second chapter is devoted to the discussion of various types of methods, e.g., effective-mass approximation, density-functional theory (DFT), and especially the empirical pseudopotential method used herein, for the calculations of the electronic and optical properties of nanostructured ZnO. The numerical results, based on the empirical pseudopotential methods and configuration interaction approach, are present in the following chapter. These results cover the size-dependent optical band gap, Stokes shift and photoluminescence spectrum. A summarization of the results is given in the last chapter.

Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors are investigated using nonlocal empirical pseudopotential method with spin-orbit interaction. For the bulk semiconductors, local and nonlocal pseudopotential parameters are obtained by fitting transport-relevant quantities, such as band gap, effective masses and deformation potentials, to available experimental data. A cubic-spline interpolation is used to extend local form factors to arbitrary q and the resulting transferable local pseudopotential V(q) with correct work function is used to investigate the 1D and 2D confined systems with supercell method. Quantum confinement, uniaxial and biaxial strain and crystal orientation effects of the band structure are investigated. Regarding the transport relavant quantities, we have found that the largest ballistic electron conductance occurs for compressively-strained large-diameter [001] wires while the smallest transport electron effective mass is found for larger-diameter [110] wires under tensile stress.

The emperical pseudopotential method in the large basis approach was used to calculate the electronic bandstructures of bulk semiconductor materials and layered semiconductor heterostructures. The crucial continuous atomic form factor potentials needed to carry out such calculations were determined by using Levenberg-Marquardt optimization in order to obtain optimal cubic spline interpolations of the potentials. The optimized potentials were not constrained by any particular functional form (such as a linear combination of Gaussians) and had better convergence properties for the optimization. It was demonstrated that the results obtained in this work could potentially lead to better agreement between calculated and empirically determined band gaps via optimization / Physics / M. Sc. (Physics)