Hexagonal boron nitride (h-BN) formation by carbothermic reduction of B2O3 under nitrogen atmosphere at 1500&deg / C and effect of CaO addition into the initial B2O3 &amp / #8211 / active C mixture were investigated during this study. Reaction products were characterized by powder X-ray diffraction, scanning electron microscopy (SEM) and quantitative chemical analysis. Main aim of this study was to investigate the presence of a second reaction mechanism that catalytically affects h-BN formation during CaO or CaCO3 addition into the initial mixture. It was found that similar to CaCO3 addition, CaO addition has a catalytic effect on carbothermic formation h-BN. In order to investigate the reaction mechanism experiments with B2O3 &amp / #8211 / CaO mixtures without active carbon addition into the mixture were conducted. Furthermore nucleation of h-BN from calcium borate melts had been investigated and experiments were conducted with h-BN addition into CaO &amp / #8211 / B2O3 mixtures. It was concluded that nucleation of h-BN in calcium borate slags under experimental conditions is not possible. Hexagonal BN should be present in the system in order to activate the second nitrogen dissolution followed by h-BN precipitation mechanism. Highest efficiency was achieved in the experiment conducted with CaCO3 addition and largest particle size was observed during the experiment conducted to investigate the effect of nucleation.

Nanomaterials are widely investigated by researches and because of their unique properties they have been utilized in many different devices. Nanowires are one of these materials which show deviated mechanical, chemical, physical and optical, properties from their bulk counterparts. These deviations in properties of the nanowires are based on both their high surface to volume ratio and quantum confinement effect. Lately optical properties of nanowires have received great attention as they also exhibit good light sensitivity. Germanium is a semiconductor, which has been used widely as an active material in infrared light detectors. Due to excellent light detection of germanium its nanostructures have also been widely studied in optoelectronic devices. Germanium nanowires have been used in many devices such as field effect transistors, diodes, field emitters and photodetectors. Synthesis of high quality and high aspect ratio germanium nanowires could make important contributions to these devices. There are several synthesis methods for germanium nanowires. These are electrochemical etching, solvothermal, supercritical v fluidic, laser ablation, chemical vapor deposition and vapor transport methods. Among these methods, high quality, single crystalline, defect free germanium nanowires using accessible solid powder precursors could be synthesized with vapor transport method. In the first part of this thesis, germanium nanowire growth with vapor transport method is investigated. One of the most advantageous features of this method is using solid powder precursors instead of toxic gases. Until now, three different kinds of solid germanium precursors have been reported in vapor transport method, all of them are investigated and the resulting nanowires are compared in this thesis. Vapor transport method enables high control over the morphology of the nanowires. The most important parameters which affect the morphology of the nanowires are temperature, pressure and precursor type. Therefore, a detailed parametric study is provided based on these parameters and their effect on the final diameter of the nanowires is determined. The as &ndash / synthesized nanowires contain a very thick oxide layer on their surface. Therefore, oxide removal with acid etching is also investigated in this thesis. In the second part of this thesis, utilization of the germanium nanowire networks in fully transparent, flexible and network enhanced photodetectors is investigated. In order to obtain a germanium nanowire network, the as-synthesized nanowires are transferred from growth substrate to the device substrate by sonication and vacuum filtration. Silver nanowires and single walled carbon nanotubes are used as fully transparent electrodes. Both rigid and flexible photodetectors are fabricated and their current-voltage characteristics and photoresponse behaviors with different germanium nanowire densities are determined.

The aim of this study was to investigate rubber toughening of resol type phenol-formaldehyde resin. For this purpose, phenolic resin was first modified by only acrylonitrile butadiene rubber, and then by using nitrile rubber together with 3-aminopropyltriethoxysilane. Test specimens were prepared by mixing and casting of liquid phenolic resin in three groups. In the first one, neat phenolic resin specimens were produced. In the second group, phenolic resin was modified with 0.5, 1, 2, and 3 wt.% nitrile rubber, while in the last group modification was carried out by using 0.5 wt.% nitrile rubber together with 1, 2, and 4wt.% amino silane (with respect to nitrile rubber). All specimens were heat cured in the oven. In order to observe behaviors of the specimens, Three-Point Bending, Charpy Impact, Plane-Strain Fracture Toughness, and Dynamic Mechanical Analysis tests were conducted according to the related ISO standards for all specimens groups. Scanning Electron Microscopy was also used for the fractographic analysis of some samples. It can be concluded that, although there were problems in mixing and casting of liquid resol type phenolic resin, its toughness could be improved by using nitrile rubber and amino silane. Modification by using nitrile rubber and amino silane together was much more effective than by using only nitrile rubber. In this synergistic case for instance, Charpy impact strength and fracture toughness values of the neat phenolic specimens were increased 63% and 50%, respectively. SEM studies indicated that the main rubber toughening mechanism was shear yielding observed as deformation lines especially initiated at the domains of nitrile rubber and amino silane.