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Time-resolved laser studies of carrier dynamics in low-dimensional semiconductor structuresCollings, David January 1994 (has links)
No description available.
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Electronic and optical properties of III-V heterostructuresGopir, Geri Kibe Ak January 1996 (has links)
No description available.
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Optical modulation properties of interdiffused III-V semiconductor quantum wells蔡植豪, Choy, Chik-ho. January 1996 (has links)
published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy
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Antimonide based quantum-well and its application in infrared photodetectorSim, Koon-hung, Steven., 沈觀洪. January 1999 (has links)
published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy
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Electronic and optical properties of interdiffused III-V semiconductorquantum well laserChan, Chu-yuen., 陳柱元. January 1997 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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Metallic quantum well states and chemisorptionTskipuri, Levan, January 2009 (has links)
Thesis (Ph. D.)--Rutgers University, 2009. / "Graduate Program in Physics and Astronomy." Includes bibliographical references (p. 123-130).
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Optical properties of intermixed quantum wells and its application in photodetectors /Lee, Siew-wan, Alex. January 1999 (has links)
Thesis (Ph. D.)--University of Hong Kong, 1999. / Includes bibliographical references (leaves 201-202).
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Electronic and optical properties of interdiffused III-V semiconductor quantum well laser /Chan, Chu-yuen. January 1997 (has links)
Thesis (Ph. D.)--University of Hong Kong, 1998. / Includes bibliographical references (leaves 186-187).
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Photoluminescence study of intermixed multiple quantum well semiconductor structureLuk, Patrick Yau Pong. January 1900 (has links) (PDF)
Thesis (M.Sc.)--City University of Hong Kong, 2005. / At head of title: City University of Hong Kong, Department of Physics and Materials Science, MSc in materials technology and management AP6306 dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.
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Optical properties of asymmetric double quantum wells and optimization for optical modulatorsKim, Dong Kwon 25 March 2008 (has links)
Optical electroabsorption modulators (EAMs) that utilize quantum wells (QWs) are known to exhibit high modulation sensitivity, which is required for the analog optical fiber link application, compared to other types of optical modulators. QW-EAMs utilize the change of absorption coefficients that depends on the change of electric field across the QW for the optical intensity modulation. This dissertation focuses on the theoretical analysis of the optical properties of asymmetric double QWs (ADQWs) and the systematic optimization of modulation sensitivity in low-voltage EAMs that incorporate ADQWs. In this structure, the accurate calculation of excitons is especially important because the excitonic as well as the band-to-band optical transitions dominate the optical properties at the operating wavelength. The complex linear optical susceptibility was calculated within the density matrix approach in the quasi-equilibrium regime for the low excitation power and through a thorough treatment of line broadening. Transition strengths were calculated in the wavevector space, which effectively includes valence subband mixing with the warping of the subbands, excitonic mixing effects, and possible optical selection rules (e.g., light polarization, spin of excitons). The calculated transmission properties of the waveguide EAMs were almost identical to the experimental data at the device operating bias range. The mixing of excitons in ADQWs was analyzed in detail in momentum space, which was demonstrated to be very important in the process of structural optimization of ADQWs. The optimization of the structural parameters revealed that at an adequate barrier position and well width, the barrier thickness affects the modulation efficiency the most. Subsequently, in InGaAsP-based waveguide type QW-EAMs that operate at 1550 nm, the optimization of only one variable the thickness of the coupling barrier of the ADQWs shows 380 % enhancement in the modulation sensitivity at a much lower bias field (70->35 kV/cm) compared with that of single-QW structures. This enhancement is found to be caused by the strong mixing of the two exciton states originating in different subband pairs.
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