In this thesis, we focus on the investigation of semiconductor optical amplifier and ring laser. We use InP based multiple quantum well epi-wafer with modulation doping in the active layer to design the semiconductor optical amplifier and ring laser for the optical communication at 1.55£gm wavelength. We combine the concept of Loop Mirror and Asymmetric Mach-Zehnder Interferometer to obtain the laser with good side mode suppression for a single wavelength light source. For the semiconductor optical amplifier, we design two different types, one is the Fabry-Perot Amplifier and the other is the Traveling Wave Amplifier. Furthermore, We use the Multi-Step Undercutting process in the fabrication of these two devices. We have established an optical measurement system, including the L-I measurement, the optical spectrum measurement and the far field measurement, to test the device parameters. After annealing, these devices with two different serial number exhibited the contact resistances of 9£[ and 16£[, respectively. Under CW operation, these FPA exhibited the threshold current of 62mA and 70mA at 20¢J, respectively. The stimulated emission wavelength was at 1531nm and 1522nm, respectively.

This thesis is mainly divided into two parts. The first part discusses in detail design flow of the coupled-resonator bandpass filters, including basic theory of synthesis and the procedure of electromagnetic (EM) simulation. In the second part, by using the above-mentioned design flow, different structure filters have been implemented on organic substrates. The coupled-resonator BPF designs are verified to overcome the elements¡¦ parasitic effects, and thus can be optimized with high degree of freedom. In practice, a 3rd-order bandpass filter by coupling three spiral resonators has been proposed and implemented, having miniature and wide stopband characteristics. Finally, a two-layer 4th-order cross-couple bandpass filter with a pair of transmission zeros has been also proposed and implemented, achieving a significant size reduction of 50% compared with the single-layer design. The simulation and measurement results have good agreement for all design cases in this thesis.

In this thesis, two separate research topics are undertaken both in the general area of compact RF/microwave circuit design. The first topic involves characterizing the parasitic effects and error due to unused post-production tuning bars. Such tuning bars are used in microwave circuit designs to allow the impedance or length of a microstrip line to be adjusted after fabrication. In general, the tuning bars are simply patterns of small, isolated sections of conductor adjacent to the thru line. Changing the impedance or length of the thru line involves bonding the appropriate tuning bars to the line. Unneeded tuning bars are simply not removed and left isolated. Ideally, there should be no coupling between these unused tuning bars and the thru line. Therefore, the unused tuning bars should have a negligible effect on the circuit??s overall performance. To nullify the parasitic effects of the tuning bars, conventional wisdom suggests placing the bars 1.0 to 1.5 substrate heights away from the main line. While successful in the past, this practice may not result in the most efficient and cost-effective placement of tuning bars in today??s compact microwave circuits. This thesis facilitates the design of compact tuning bar configurations with minimum parasitic effects by analyzing the error attributable to various common tuning bar configurations with a range of parameters and offset distances. The error is primarily determined through electromagnetic simulations, and the accuracy of these simulations is verified by experimental results. The second topic in this thesis involves the design of compact microwave resonators using the transmission line approach to create negative refractive index metamaterials. A survey of the major developments and fundamental concepts related to negative refractive index technology (with focus on the transmission line approach) is given. Following is the design and measurement of the compact resonators. The resonators are also compared to their conventional counterparts to demonstrate both compactness and harmonic suppression.

A procedure is introduced for increasing the sensitivity of measurements in integrated ring resonators beyond what has been previously accomplished. This is demonstrated by a high-frequency, phase sensitive lock to the ring resonators. A prototyped fiber Fabry-Perot cavity is used for comparison of the method to a similar cavity. The Pound-Drever-Hall (PDH) method is used as a proven, ultra-sensitive method with the exploration of a much higher frequency modulation than has been previously discussed to overcome comparatively low finesse of the ring resonator cavities. The high frequency facilitates the use of the same modulation signal to separately probe the phase information of different integrated ring resonators with quality factors of 8.2 x10^5 and 2.4 x10^5. The large free spectral range of small cavities and low finesse provides a challenge to sensing and locking the long-term stability of diode lasers due to small dynamic range and signal-to-noise ratios. These can be accommodated for by a calculated increase in modulation frequency using the PDH approach. Further, cavity design parameters will be shown to have a significant affect on the resolution of the phase-sensing approach. A distributed feedback laser is locked to a ring resonator to demonstrate the present sensitivity which can then be discussed in comparison to other fiber and integrated sensors. The relationship of the signal-to-noise ratio (S/N) and frequency range to the cavity error signal will be explored with an algorithm to optimize this relationship. The free spectral range and the cavity transfer function coefficients provide input parameters to this relationship to determine the optimum S/N and frequency range of the respective cavities used for locking and sensing. The purpose is to show how future contributions to the measurements and experiments of micro-cavities, specifically ring resonators, is well-served by the PDH method with high-frequency modulation.

In this study, T-ladder type thin film bulk acoustic wave filters had been fabricated based on thin film bulk acoustic wave resonators. The titanium (Ti) seeding layer and platinum (Pt) for bottom electrode were deposited on silicon substrates by a dual-gun DC sputtering system. Field-emission scanning electron microscopy, atomic force microscopy and the four-point probe method showed that the Pt bottom electrode deposited on the Ti seeding layer exhibited favorable characteristics, such as a surface roughness of 0.69 nm and a sheet resistance of 2.27 £[/¡¼. The ZnO piezoelectric film was deposited using the two-step deposition method by RF magnetron sputtering. Field-emission scanning electron microscopy, atom force microscopy and X-ray diffraction revealed that ZnO piezoelectric film exhibited excellent characteristics, such as a the high preferred c-axis orientation and a rigidly precise surface structure with surface roughness of 7.37 nm. The wet etching process is adopted to fabricate cavity of device. The concentration of 30 wt% KOH and etching temperature of 100 ¢J had been indicated appropriate for etching processes. Finally, the top electrodes of the devices are varied to approach the performances of device applications. The results showed the highest coupling coefficient (kt2) of FBAR device can be obtained using platinum top electrode. The high coupling coefficient of FBAR device is appropriate for wide passband filter. The annealing processes had been used in order to improve the characteristics of piezoelectric films. The stress of ZnO film has been improved from -1.656 Gpa to 0.611 Gpa through the annealing process. At the annealing temperature of 400¢J, the ZnO piezoelectric film exhibited excellent characteristics, such as a large grain size with smooth surface. The quality factor of FBAR device using ZnO film with 400¢J annealing was better than that without annealing. The optimal conditions of fabrication processes are adopted to fabricate top electrode, bottom electrode and piezoelectric film. The T-ladder type FBAR band pass filter was constructed by FBAR resonators. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station. The 3-dB bandwidth, insertion loss and band rejection of the T-ladder type thin film bulk acoustic wave filter are 79MHz, -3.5 dB and 8.4dB at 2,379MHz, respectively.

Universiẗat, Diss., 2005--Würzburg. / Erscheinungsjahr an der Haupttitelstelle: 2004.

Zugl.: Berlin, Techn. Univ., Diss., 2009

Universiẗat, Diss., 2001--München.

Techn. University, Diss., 2003--Berlin.

Techn. Universiẗat, Diss., 2005--Berlin.