ITC/USA 2005 Conference Proceedings / The Forty-First Annual International Telemetering Conference and Technical Exhibition / October 24-27, 2005 / Riviera Hotel & Convention Center, Las Vegas, Nevada / Reconfigurable patch antenna integrated with RF mircoelectromechanical system (MEMS) switches is presented in this paper. The proposed antenna radiates circularly polarized wave at selectable dual frequencies (4.7 GHz and 7.5GHz) of high frequency ratio (1.6:1). The switches are incorporated into the diagonally-fed square patch for controlling the operation frequency, and a rectangular stub attached to the edge of the patch acts as the perturbation to produce the circular polarization. Gain of proposed antenna is 5 - 6dBi, and axial ratio satisfies 3dB criterion at both operating frequencies. The switches are monolithically integrated on quartz substrate. The antenna can be used in applications requiring frequency diversity of remarkable high frequency ratio.

Els serveis de telecomunicacions i sistemes radar estan migrant a freqüències mil•limètriques (MMW), on es disposa d 'una major amplada de banda i conseqüentment d'una major velocitat de transmissió de dades. Aquesta migració requereix de l'ús de diferents tecnologies amb capacitat d'operar a la banda de freqüències mil•limètriques (30 a 300 Ghz), i més concretament en les bandes Ka (26,5 - 40GHz), V (50 – 75GHz) i W (75 – 110GHz). En moltes aplicacions i sobretot en aquelles on l'antena forma part d'un dispositiu mòbil, es cerca poder utilitzar antenes planes, caracteritzades per tenir unes dimensions reduïdes i un baix cost de fabricació. El conjunt de requeriments es pot resumir en obtenir una antena amb capacitat de reconfigurabilitat i amb un baix nivell de pèrdues en cada una de les bandes de freqüència. Per tal d'afrontar aquests reptes, les dimensions de les antenes mil•limètriques, juntament amb els tipus de materials, toleràncies de fabricació i la capacitat de reconfigurabilitat ens porten a l'ús de processos de microfabricació. L'objectiu d'aquesta tesis doctoral és l'anàlisi dels conceptes mencionats, tipus de materials, geometries de línia de transmissió i interruptors, en el context de les freqüències mil•limètriques, així com la seva aplicació final en dissenys d'antenes compatibles amb els processos de microfabricació. Finalment, com a demostració s'han presentat dissenys específics utilitzables en tres aplicacions a freqüències mil•limètriques: Sistemes de Comunicació per Satèl•lit (SCS) a la banda Ka, Xarxes d'àrea personal inalàmbriques (WPAN) a la banda V i sistemes radar per l'automoció a la banda W. La primera part d'aquesta tesis consisteix en l'anàlisi d'algunes tecnologies circuitals a freqüències mil•limètriques. S'han presentat els materials més utilitzats a altes freqüències (Polytetrafluoroethylene or Teflon (PTFE), Quartz, Benzocyclobuten polymer (BCB) i Low Temperature Co-fired Ceramic (LTCC)) i s'han comparat en termes de permitivitat i tangent de pèrdues. També s'inclou un estudi de pèrdues a altes freqüències en les principals línies de transmissió (microstrip, stripline i CPW). Finalment, es presenta un resum dels interruptors RF-MEMS i es comparen amb els PIN diodes i els FET. En la segona part, es presenten diferents agrupacions d'antenes amb la capacitat de reconfigurar la polarització i la direcció d'apuntament. S'han dissenyat dos elements base reconfigurables en polarització: CPW Patch antena i 4-Qdime antena. La primera antena consisteix en un element singular amb interruptors RF-MEMS, dissenyada per operar a les bandes Ka i V. La segona antena consisteix en una arquitectura composta on la reconfigurabilitat en polarització s'obté mitjançant variant la fase d'alimentació de cada un dels quatre elements lineals. La fase és controlada mitjançant interruptors RF-MEMS ubicats en la xarxa de distribució. L'antena 4-Qdime s'ha dissenyat per operar en les bandes V i W. Ambdós elements base s'han utilitzat posteriorment pel disseny de dues agrupacions d'antenes amb capacitat de reconfigurar l'apuntament del feix principal. La reconfigurabilitat es dur a terme utilitzant desfasadors de fase d'1 bit. La part final de la tesis es centra en les toleràncies de fabricació i en els processo de microfabricació d'agrupacions d'antenes mil•limètriques. Les toleràncies de fabricació s'han estudiat en funció dels error d'amplitud i fase en cada element de l'agrupació, fixant-se en les pèrdues de guany, error d'apuntament, error en l'amplada de feix, errors en el nivell de lòbul secundari i en l'error en la relació axial. El procés de microfabricació de les diferents antenes dissenyades es presenta en detall. Els dissenys de l'antena CPW Patch reconfigurable en polarització i apuntament operant a les bandes Ka i V, s'han fabricat en la sala blanca del Cornell NanoScale Science & Technology Facility (CNF). Posteriorment, s'han caracteritzat l'aïllament i el temps de resposta dels interruptors RF-MEMS, i finalment, el coeficient de reflexió, el diagrama de radiació i la relació axial s'han mesurat a les bandes Ka i V per les antenes configurades en polarització lineal (LP) i circular (CP). / Telecommunication services and radar systems are migrating to Millimeter-wave (MMW) frequencies, where wider bandwidths are available. Such migration requires the use of different technologies with the capability to operate at the MMW frequency band (30 to 300GHz), and more specifically at Ka- (26.5 to 40GHz), V- (50 to 75GHz) and W-band (75 to 110GHz). For many applications and more concretely those where the antenna is part of a mobile device, it is targeted the use of planar antennas for their low profile and low fabrication cost. A wide variety of requirements is translated into a reconfiguration capability and low losses within each application frequency bandwidth. To deal with the mentioned challenges, the MMW antenna dimensions, together with the materials, fabrication tolerances and reconfigurability capability lead to microfabrication processes. The aim of this thesis is the analysis of the mentioned concepts, materials, transmission lines geometries and switches in the MMW frequencies context and their final application in antenna designs compatible with microfabrication. Finally, specific designs are presented as a demonstration for three MMW applications: Satellite Communication Systems (SCS) at Ka-band, Wireless Personal Area Network (WPAN) at V-band and Automotive Radar at W-band. The first part of this thesis consist to analyze some MMW circuit technologies. The four most used materials at MMW frequencies (Polytetrafluoroethylene or Teflon (PTFE), Quartz, Benzocyclobuten polymer (BCB) and Low Temperature Co-fired Ceramic (LTCC)) have been presented and compared in terms of permittivity (εr) and loss tangent (tanδ). An study of the main transmission lines attenuation (microstrip, stripline and CPW) at high frequencies is included. Finally, an overview of the RF-MEMS switches is presented in comparison with PIN diodes and FETS switches. The second part presents different polarization and beam pointing reconfigurable array antennas. Two polarization-reconfigurable base-elements have been designed: CPW Patch antenna and 4-Qdime antenna. The first consists of a single reconfigurable element with integrated RF-MEMS switches, designed to operate at Ka- and V-band. The second antenna presented in this thesis has a composed architecture where the polarization reconfigurability is obtained by switching the phase feeding for each of the four linear polarized elements in the feed network with RF-MEMS switches. The 4-Qdime antenna has been designed to operate at V- and W-band. The two base-elements have been used to design two beam pointing reconfigurable antenna arrays. Using phased array techniques, beamsteering is computed and implemented with 1-bit discrete phase-shifter. The final part of the thesis is focused into the fabrication tolerances and microfabrication process of Millimeter-wave antenna arrays. The fabrication tolerances have been studied as a function of the amplitude and phase errors presented at each elements array, focusing on the gain loss, beam pointing error, Half-Power Beamwidth (HPBW) error, sidelobe level error and axial ratio error. The microfabrication process for the designed antennas is presented in detail. Polarization- and pointing- reconfigurable CPW Patch antenna operating at Ka- and V- band have been fabricated in a clean-room facility at Cornell NanoScale Science & Technology Facility (CNF). The RF-MEMS switches isolation and time response have been characterized. Finally, the reflection coefficient, radiation pattern and axial ratio have been measured at Ka- and V-band for the fabricated antennas configured in Linear Polarization (LP) and Circular Polarization (CP).

This dissertation deals with the development of RF MEMS switches with novel materials and micromachining techniques for the RF and microwave applications. To enable the integration of RF and microwave components on CMOS grade silicon, finite ground coplanar waveguide transmission line on CMOS grade silicon wafer were first studied using micromachining techniques. In addition, several RF MEMS capacitive switches were developed with novel materials. A novel approach for fabricating low cost capacitive RF MEMS switches using directly photo-definable high dielectric constant metal oxides was developed, these switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric. The second RF MEMS switch developed is on a low cost, flexible liquid crystal polymer (LCP) substrate. Its very low water absorption (0.04%), low dielectric loss and multi-layer circuit capability make it very appealing for RF Systems-On-a-Package (SOP). Also, a tunable RF MEMS switch on a sapphire substrate with BST as dielectric material was developed, the BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitor-switches. For the first time a capacitive tunable RF MEMS switch with a BST dielectric and its characterization and properties up to 40 GHz was presented. Dielectric charging is the main reliability issue for MEMS switch, temperature study of dielectric polarization effect of RF MEMS was investigated in this dissertation. Finally, integration of two reconfigurable RF circuits with RF MEMS switches were discussed, the first one is a reconfigurable dual frequency (14GHz and 35 GHz) antenna with double polarization using RF MEMS switches on a multi-layer LCP substrate; and the second one is a center frequency and bandwidth tunable filter with BST capacitors and RF MEMS switches on sapphire substrate.

This thesis presents realization of two shunt, capacitive contact RF MEMS switches and two RF MEMS SPDT switches for microwave and millimeter-wave applications, two zero-level package structures for RF MEMS switches and development trials of a BCB based zero level packaging process cycle. Two shunt, capacitive contact RF MEMS switches for 26 GHz and 12 GHz operating frequencies are designed, fabricated and consistencies between fabricated devices and designs are shown through RF measurements. For the switch design at 26 GHz and at the operating frequency, return loss in the upstate is measured to be 27.61 dB, insertion loss and isolation in the downstate is measured to be 0.21 dB and 27.16 dB, respectively. For the switch design at 12 GHz and at the operating frequency, return loss in the upstate is measured to be 38.69 dB, insertion loss and isolation in the downstate is measured to be 0.05 dB and 25.84 dB, respectively. Quite accurate circuit models have been obtained for both of the RF MEMS switches. Two RF MEMS SPDT switches, which utilize the shunt, capacitive contact switches as building blocks are designed through circuit simulations. These two designs are fabricated and their RF measurements have been completed. It is shown from circuit model simulations that, the performances of the fabricated devices and desired responses corresponded to each other. For the SPDT switch design at 26 GHz, return loss at the input port is measured to be 12 dB and insertion loss is measured to be 1.24 dB. For the SPDT switch design at 12 GHz, return loss at the input port is measured to be 5.6 dB and insertion loss is measured to be 0.49 dB. The reason behind the unexpectedly bad performances has been investigated and discovered. The bad performances were due to a common mistake in the layouts of both SPDT switches. These mistakes are corrected in the circuit models and expected performances are obtained. Two different zero-level package structures which use high-resistive Si wafers have been suggested and required design changes have been made on the RF MEMS shunt, capacitive contact switches and SPDT switches in order to minimize the package effects. For this purpose polygonal CPW transitions have been designed and integrated into the designs, followed by the necessary tunings in the switch structures for which EM and circuit simulations are utilized. For the suggested package structures to be produced, two possible process cycles have been studied. One of the process flows was based on KOH anisotropic Si etching and the other one was based on DRIE (Deep Reactive Ion Etching). Great progress has been achieved in the latter process cycle, however this process cycle still needs some more study and it could not be completed in the time required for this thesis study.

This thesis presents development of microwave lumped elements for a specific surface-micromachining based technology, a self-contained mechanical characterization of fixed-fixed type beams and realization of a shunt, capacitive-contact RF MEMS switch for millimeter-wave applications. Interdigital capacitor, planar spiral inductor and microstrip patch lumped elements developed in this thesis are tailored for a surface-micromachining technology incorporating a single metallization layer, which allows an easy and low-cost fabrication process while permitting mass production. Utilizing these elements, a bandpass filter is fabricated monolithically with success, which exhibits a measured in-band return loss better than -20 dB and insertion loss of 1.2 dB, a pass-band located in S-band and a stop-band extending up to 20 GHz. Analytical derivations for deflection profile and spring constant of fixed-fixed beams are derived for constant distributed loads while taking axial effects into account. Having built experience with the mechanical domain, next, Finite Difference solution schemes are established for pre-pull-in and post-pull-in electrostatic actuation problems. Using the developed numerical tools / pull-in, release and zipping phenomena are investigated. In particular, semi-empirical expressions are developed for the pull-in voltage with associated errors not exceeding 3.7 % of FEA (Finite Element Analysis) results for typical configurations. The shunt, capacitive-contact RF MEMS switch is designed in electromagnetic and mechanical domains for Ka-band operation. Switches fabricated in the first process run could not meet the design specifications. After identifying sources of relevant discrepancies, a design modification is attempted and re-fabricated devices are operated successfully. In particular, measured OFF-state return and insertion losses better than -16.4 dB and 0.27 dB are attained in 1-40 GHz. By applying a 20-25V actuation, ON-state resonances are tuned precisely to 35 GHz with an optimum isolation level of 39 dB.