The Rapid Thermal Chemical Vapor Deposition (RTCVD) system is an emerging and promising technology in semiconductor manufacturing which possess advantages of rapidly increasing wafer temperature and reducing the thermal budget over traditional batch processing. In recent years, the growth of thin films in the manufacture of semiconductor devices has been widely employed in the industry. Because the influences of processing variables on RTCVD systems may lead to spatial wafer temperature non-uniformity, the precise control of wafer temperature is an important issue up to the present. In this paper the complementary sensitivity function shaping based on H-infinite control theory is applied to design robust controllers for the single-input/single-output (SISO) model of the RTCVD system, the multi-input/multi-output (MIMO) model of the RTCVD system, and the MIMO model with multiplicative uncertainties. Through control the power of the tungsten-halogen lamps, it can achieve the temperature tracking with good uniformity. Finally, the computer simulation results are obviously that the performance of the proposed controllers is satisfactory.