Nanotecnologia é o conjunto de conhecimentos acumulados pelo homem que permite controlar a produção de estruturas com uma ou mais dimensões nanométricas. Desde seus primórdios na década de 70, a nanotecnologia tem estado em constante ascensão, encontrando uma diversidade enorme de aplicações, como por exemplo em medicina e na indústria optoeletrônica. Por consequência, a demanda por equipamentos tanto de preparo como de caracterização/controle tem crescido exponencialmente. O uso da radiação X no estudo de dispositivos nanoestruturados tem sido, em grande parte, possível gra- ças as fontes síncrotrons com feixes intensos. Mas a disponibilidade desses laboratórios de alta tecnologia está aquém da crescente demanda das pesquisas em nanotecnologia, as quais precisam de técnicas de análise estrutural rápidas e de fácil acesso para otimização e controle da produção de dispositivos nanoestruturados. Com foco nessa falta por técnicas de análise estrutural, esta dissertação tem como objetivo avaliar quais parâmetros básicos de nanodispositivos, com substratos monocristalinos, podem ser investigados por meio de técnicas de difração de raios X utilizando fontes compactas de radiação, bem como avaliar as limitações instrumentais. / X-ray radiation has provided a powerful tool for analyzing the structure of materials at atomic scale. While many are fascinated with the perspectives oered by advanced X-ray sources, the practical aspects of these perspectives in the actual and future scenery of nanotechnology needs to be discussed. Nanotechnology, i.e. the capacity of controlling matter at atomic-molecular scales and manufacturing structures with dimensions of a few tens of nanometers, has provided a constant challenge for structural analysis via X-ray techniques. The great diversity of materials and methods derived from nanotechnology is generating a huge demand for time of analysis, much beyond of that can be supplied by synchrotron facilities worldwide. In optimizing nanostructured materials and devices processing methods, fast and easy-access techniques to control and characterization are required. Microscopy and spectroscopy techniques are very important in this scenery, but they have intrinsic limitations that have justied the search for high-resolution techniques of structural analysis, such as those obtained by diraction of X-rays. The use of Xradiation in the study of nanostructured device has been possible by synchrotron sources due to the high intense beams. But the availability of these high tech laboratories falls short of the growing demand for nanotechnology research. In this context, this dissertation intend evaluate which basic parameters of nanodevices with single crystal substrates can be investigated by techniques of X-ray diraction using compact radiation sources as well how to evaluate the instrumental limitations .

Die Arbeit stellt neu entwickelte Röntgenbeugungsmethoden vor, mit deren Hilfe der Verzerrungszustand des Kristallgitters von Halbleiter-Wafern und -Bauteilen im Detail charakterisiert werden kann. Hierzu werden die aussergewöhnlichen Eigenschaften der an modernen Synchrotrons wie der ESRF (Grenoble) verfügbaren Röntgenstrahlung genutzt. <br>Im ersten Teil der Arbeit werden Röntgen-Diffraktometrie und -Topographie zu einer Untersuchungsmethode kombiniert, mit der die makroskopische Krümmung von Halbleiter-Wafern ebenso wie ihre mikroskopische Defektstruktur abgebildet werden kann. Der zweite Teil ist der Untersuchung von epitaktisch gewachsenen und geätzten Oberflächengittern mit Abmessungen im Submikrometer-Bereich gewidmet. Die unterschiedlichen Gitterkonstanten der beteiligten Halbleitermaterialien führen zu einem inhomogenen Verzerrungsfeld in der Probe, das sich im Röntgenbild durch eine charakteristische Verformung des Beugungsmusters in der Umgebung der Bragg-Reflexe äussert. Die Analyse der experimentell gemessenen Beugungsmuster geschieht mit Hilfe eines neu entwickelten Simulationsverfahrens, das Elastizitätstheorie und eine semi-kinematische Röntgenbeugungstheorie miteinander verbindet. Durch quantitativen Vergleich der Simulationsergebnisse mit den Messdaten kann auf den genauen Verlauf des Verzerrungsfeldes in den Proben zurückgeschlossen werden. Dieses Verfahren wird erfolgreich auf verschiedene Halbleiter-Probensysteme angewendet, und schliesslich auch auf die Untersuchung von akustischen Oberflächenwellen in Halbleiterkristallen übertragen. / This thesis presents newly developed X-ray methods which can be used to characterize in detail the state of distortion of the crystal lattice in semiconductor wafers, devices and nanostructures. The methods use the extraordinary properties of the X-rays available from modern synchrotron sources such as the ESRF (Grenoble). <br>In the first part of the thesis, X-ray diffractometry and X-ray topography are combined into a new method, called X-ray rocking curve imaging, which allows to image the macroscopic curvature of semiconductor wafers as well as the underlying microscopic defect structure. The second part of the thesis deals with the investigation of epitaxially grown and subsequently etched semiconductor gratings with lateral periods below the micrometer. The lattice mismatch between the different materials used in heteroepitaxy leads to a non-uniform strain field in the sample, which is reflected in a characteristic distortion of the X-ray diffraction pattern around each Bragg peak. The experimental data are evaluated with the help of a newly developed simulation procedure which combines elasticity theory with a semi-kinematical theory of X-ray diffraction. From a quantitative comparison of measured and simulated data the detailed shape of the strain field in the samples can be deduced. This procedure is used successfully for the structural characterization of different types of semiconductor gratings, and is finally applied also to the investigation of surface acoustic waves in crystals.

Nanotecnologia é o conjunto de conhecimentos acumulados pelo homem que permite controlar a produção de estruturas com uma ou mais dimensões nanométricas. Desde seus primórdios na década de 70, a nanotecnologia tem estado em constante ascensão, encontrando uma diversidade enorme de aplicações, como por exemplo em medicina e na indústria optoeletrônica. Por consequência, a demanda por equipamentos tanto de preparo como de caracterização/controle tem crescido exponencialmente. O uso da radiação X no estudo de dispositivos nanoestruturados tem sido, em grande parte, possível gra- ças as fontes síncrotrons com feixes intensos. Mas a disponibilidade desses laboratórios de alta tecnologia está aquém da crescente demanda das pesquisas em nanotecnologia, as quais precisam de técnicas de análise estrutural rápidas e de fácil acesso para otimização e controle da produção de dispositivos nanoestruturados. Com foco nessa falta por técnicas de análise estrutural, esta dissertação tem como objetivo avaliar quais parâmetros básicos de nanodispositivos, com substratos monocristalinos, podem ser investigados por meio de técnicas de difração de raios X utilizando fontes compactas de radiação, bem como avaliar as limitações instrumentais. / X-ray radiation has provided a powerful tool for analyzing the structure of materials at atomic scale. While many are fascinated with the perspectives oered by advanced X-ray sources, the practical aspects of these perspectives in the actual and future scenery of nanotechnology needs to be discussed. Nanotechnology, i.e. the capacity of controlling matter at atomic-molecular scales and manufacturing structures with dimensions of a few tens of nanometers, has provided a constant challenge for structural analysis via X-ray techniques. The great diversity of materials and methods derived from nanotechnology is generating a huge demand for time of analysis, much beyond of that can be supplied by synchrotron facilities worldwide. In optimizing nanostructured materials and devices processing methods, fast and easy-access techniques to control and characterization are required. Microscopy and spectroscopy techniques are very important in this scenery, but they have intrinsic limitations that have justied the search for high-resolution techniques of structural analysis, such as those obtained by diraction of X-rays. The use of Xradiation in the study of nanostructured device has been possible by synchrotron sources due to the high intense beams. But the availability of these high tech laboratories falls short of the growing demand for nanotechnology research. In this context, this dissertation intend evaluate which basic parameters of nanodevices with single crystal substrates can be investigated by techniques of X-ray diraction using compact radiation sources as well how to evaluate the instrumental limitations .