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Thesis (Ph.D.)--University of Central Florida, 2008. / Adviser: Juin J. Liou. Includes bibliographical references (p. 104-116).

Thesis (M. Eng.), Memorial University of Newfoundland, 1998. / Bibliography: leaves 140-143.

Thesis (M.S.)--University of Wisconsin--Madison, 1967. / eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Thesis (M.Eng.)--Memorial University of Newfoundland, 2004. / Bibliography: leaves 163-174.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / William Doolittle, Committee Member ; Joy Laskar, Committee Member ; Russell Dupuis, Committee Chair ; David Citrin, Committee Member ; Srinivas Garimella, Committee Member.

Made available in DSpace on 2014-06-11T19:30:51Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-11-17Bitstream added on 2014-06-13T19:40:19Z : No. of bitstreams: 1 oliveira_ps_dr_ilha.pdf: 3130765 bytes, checksum: 0c4b2304df4d8d77cefc95229a378d17 (MD5) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Os conversores ou retificadores multipulsos se apresentam como uma técnica passiva para melhorar a qualidade de energia na rede elétrica. Eles proporcionam baixa Distorção Harmônica Total de corrente (DHTi), resultando um elevado Fator de Potência (FP) e baixa ondulação na tensão de saída. Neste contexto apresenta-se um abrangente levantamento bibliográfico, com o intuito de classificar as inúmeras topologias CA-CC trifásicas. As topologias retificadoras CA-CC estudadas nesta tese utilizam transformadores não-isolados, ou autotransformadores, cujas conexões são denominadas de Estrela e Delta-diferenciais, que resultam em retificadores multipulsos. Como atrativo essas topologias apresentam baixas taxas kVA (parcela de potência processada pelos núcleos), o que leva a reduzidos peso e volume. São estruturas confiáveis e robustas, apresentam baixa complexidade de construção e produzem pequena interferência eletromagnética. Outra grande vantagem destas estruturas é a possibilidade de obter qualquer valor de tensão de saída para qualquer nível de tensão de entrada. Como contribuição deste trabalho, análises matemáticas e fasoriais foram realizadas para cada uma das configurações com topologias Delta e Estrela, obtendo expressões generalizadas com relação ao número de pulsos do retificador para cada uma delas. A partir deste equacionamento foi possível obter expressões unificadas para duas das configurações de diferentes topologias (denominadas de A e C). A análise unificada foi realizada tanto para tensão como para corrente, resultando no equacionamento utilizado no desenvolvimento de uma nova ferramenta de simulação e projeto para os retificadores com essas duas configurações. A partir da análise matemática de cada configuração foi possível desenvolver uma nova metodologia... / Nowadays the theme of Power Quality has been one of the most discussed topics. Several techniques for power factor correction are presented in the literature. The multipulse converters or rectifiers resurge as a passive technique to improve the power quality in the mains. They provide low Total Harmonic Distortion of current (THDi), high Power Factor (PF) and low ripple on the output voltage. This thesis shows a comprehensive bibliographic research with the purpose of classifying the several AC-DC three-phase topologies that improve the power quality in the mains. The topologies studied in this thesis use non-isolated transformers and are called as generalized Wye and Delta-differential connections. These connections show an advantage of low kVA-rating (power processed by the core), reducing weight and volume of these rectifier structures. The multipulse rectifiers are reliable and robust, they show low complexity construction and low electromagnetic interference. Another advantage for these connections is the possibility to choose any value of the output voltage for any level of input voltage. Several configurations for Wye and Delta topologies are presented. One of the contributions of this thesis were the mathematical and fasorial analysis made for all configurations in order to obtain generalized expressions related to the pulse numbers for each configuration. From this equation was possible to obtain unified expressions for two configurations of different topologies (denominated A and C). The analysis was realized for voltage and current, result in an equation used in the development of a new simulation tool and designed for the rectifiers with this two configurations. Through the mathematical analysis it was possible to realize a study connecting the rectifier average output voltage and... (Complete abstract click electronic access below)

A rectifier is an electrical device, comprising one or more semiconductor devices arranged for converting alternating current to direct current by blocking the negative or positive portion of the waveform. The purpose of this study would be to evaluate dynamic and static electrical characteristics of rectifier chips fabricated with (a) DY8 process and (b) YI8 process and compare them with the existing DI8 process rectifiers. These new rectifiers were tested to compare their performance to meet or exceed requirements of lower forward voltages, leakage currents, reverse recovery time, and greater sustainability at higher temperatures compared to diodes manufactured using boron as base (DI8 process diodes) for similar input variables.

Nanoscale materials have many potential advantages because of their quantum confinement, cost and producibility by low-temperature chemical methods. Advancement of theoretical methods as well as the availability of modern high-performance supercomputers allow us to control and exploit their microscopic properties at the atomic scale, hence making it possible to design novel nanoscale molecular devices with interesting features (e.g switches, rectifiers, negative differential conductance, and high magnetoresistance). In this thesis, state-of-the-art theoretical calculations have been performed for the quantum transport properties of nano-structured materials within the framework of Density Functional Theory (DFT) and the Nonequilibrium Green's Function (NEGF) formalism. The switching behavior of a dithiolated phenylene-vinylene oligomer sandwiched between Au(111) electrodes is investigated. The molecule presents a configurational bistability, which can be exploited in constructing molecular memories, switches, and sensors. We find that protonation of the terminating thiol groups is at the origin of the change in conductance. H bonding at the thiol group weakens the S-Au bond, and thus lowers the conductance. Our results allow us to re-interpret the experimental data originally attributing the conductance reduction to H dissociation. Also examined is current-induced migration of atoms in nanoscale devices that plays an important role for device operation and breakdown. We studied the migration of adatoms and defects in graphene and carbon nanotubes under finite bias. We demonstrate that current-induced forces within DFT are non-conservative, which so far has only been shown for model systems, and can lower migration barrier heights. Further, we investigated the quantum transport behavior of an experimentally observed diblock molecule by varying the amounts of phenyl (donor) and pyrimidinyl (acceptor) rings under finite bias. We show that a tandem configuration of two dipyrimidinyl-diphenyl molecules improves the rectification ratio, and tuning the asymmetry of the tandem set-up by rearranging the molecular blocks greatly enhances it. It has been recently demonstrated that the large band gap of boronitrene can be significantly reduced by carbon functionalization. We show that specific defect configurations can result in metallicity, raising interest in the material for electronic applications. In particular, we demonstrate negative differential conductance with high peak-to-valley ratios, depending on the details of the material, and identify the finite bias effects that are responsible for this behavior. Also, we studied the spin polarized transport through Mn-decorated topological line defects in graphene. Strong preferential bonding is found, which overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism. Finally, the results obtained herein advance the field of quantum electronic transport and provide significant insight on switches, rectification, negative differential conductance, magnetoresistance, and current-induced forces of novel nanoscale materials.

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