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This thesis presents the investigations of femtosecond laser machining on three different dielectric materials, namely quartz, sapphire and diamond. The laser micromachining experiments were performed with a Titanium:Sapphire solid state laser with a repetition rate of 1 kHz, centered at a wavelength of 800 nm and pulse duration of 150-200 femtoseconds (fs). A 5x microscope objective for surface micromachining and a 50x microscope objective for subsurface micromachining. The 50x microscope objective was used to obtain a smaller spot size and a shorter confocal parameter. The purpose of this research was to study the interaction between the femtosecond laser pulses and quartz, sapphire and diamond which have bandgap energies of 8.4 eV (λ=148 nm), 9.9 eV (125 nm), and c)· diamond 5.5 eV (225 nm) respectively. Since the photon energy of the laser was below the wide bandgap energies of the aforementioned dielectrics, the materials were essentially transparent to the incident laser. In order to study the behavior of the dielectric materials under femtosecond laser irradiation, several experiments with varying type and number of pulses (N) were performed, such as single pulse ablation, plural pulse ablation (N ≤ 100 pulses), multiple pulse ablation (N ≤ 100 pulses), and continuous lines micromachining on the surface and in the sub-surface of materials were performed. The features, damage, and structural changes introduced by femtosecond laser irradiation on the materials studied were characterized through examination of both the plan and cross-section views. The characterization process was carried out using optical microscopy (operated in the Nomarski mode), scanning electron microscopy, focused ion beam, atomic force microscopy, and transmission electron microscopy. The laser micromachining demonstrated distinct behaviors of the three wide bandgap materials. Quartz was very prone to cracking and showed nearwavelength alternating crystalline and amorphous sub-structure with the orientation parallel with respect to the electric field direction. Sapphire showed sub-wavelength ripples formation in lower fluences. Finally, diamond showed a strong tendency for ripples formation from near- to sub-wavelength spacing with the orientation of the ripples perpendicular and parallel with respect to electric field polarization. / Thesis / Master of Applied Science (MASc)

This research provides the original work on the geometry factors selection for single crystal sapphire optical fiber (SCSF) to improve the optical property in sensing applications. Single crystal sapphire fibers were fabricated with a Laser Heated Pedestal Growth (LHPG) system, which was constructed in-house at Virginia Tech. The cost effective, high efficiency and fully operational Laser-heated Pedestal Growth (LHPG) system as well as the fiber fabrication process were also demonstrated in this research. The results indicated the windmill single crystal sapphire optical fiber (SCSF) will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that are limited by the optical property of unclad single crystal sapphire optical fiber (SCSF). / Ph. D.

Thesis (M.Sc.Eng.) / This research addressed the design and fabrication of nano-patterned sapphire substrates (NPSS) as well as the growth by molecular-beam epitaxy (MBE) on such substrates of AlGaN and InGaN multiple quantum wells (MQWs). In recent years a number of LED manufacturers are developing nitride LED devices emitting in the visible part of the electromagnetic spectrum on micron-patterned sapphire substrate (MPSS). These devices are reported to have lower threading dislocation densities, resulting in improvement of the LED internal quantum efficiency (IQE). Furthermore, the LED devices fabricated on MPSS were also found to have improved light extraction efficiency (LEE), due to light scattering by the patterned substrate. My research focuses on the development of nano-patterned sapphire substrate aiming to improve the performance of LEDs grown by MBE and emitting at the deep ultraviolet region of the electromagnetic spectrum. In order to optimize the nano-patterning of the sapphire substrates for maximum light-extraction, the Finite-Difference Time-Domain (FDTD) simulation method was employed. The LEE enhancement was calculated as a function of the diameter, height and perion of the pattern. The calculations were performed only at a single wavelength, corresponding to the maximum of the emitted LED spectrum, which was taken to be 280 nm. These calculations have shown that the best sapphire substrate patterning strategy for this wavelength is the cone shape pattern in hexagonal array structure. Based on limited number of calculations I found that the optimum period, diameter and height of this cone shaped pattern are 400nm 375nm and 375nm respectively. Experimentally, nano patterned substrates were fabricated through natural and nano-imprint lithography. In natural lithography the first step for the definition of the nano-pattern consists of coating the sapphire substrate with photoresist (PMMA) followed by depositing a monolayer of polystyrene nanospheres, 400nm in diameter, using the Langmuir–Blodgett method. These spheres assemble on the substrate and form a closed packed hexagonal array pattern. Following this step the size of the spheres was slightly reduced using reactive-ion etching (RIE) in oxygen plasma. This was followed by the deposition a chromium film, lift-off to remove the polystyrene spheres and RIE to remove the PMMA from the footprints of the spheres. The substrate was then coated with a nickel or chromium films followed by another lift-off which defines the final mask for the formation of cone shaped features by RIE in a CHF3 plasma. An alternative method for pattern definition was the nanoimprint lithography; the stamp for this method (2 mm2 in size) was formed on Silicon substrate using e-beam lithography. NPSS with high quality pillar shape was also fabricated by this method, however, this method can produce only small size patterns. AlGaN films and GaN/InGaN MQWs were deposited on the NPSS by MBE, and characterized by Scanning electron microscopy and photoluminescence and cathodoluminescence measurements. The cathodoluminescence and photoluminescence spectra show that films grown on NPSS has much stronger luminescence than the films grown on flat sapphire substrate, consistent with enhanced light extraction efficiency.

Conqueror for Indigo is production treated with an active chemical to maximize the ink adhesion.ArjoWiggins has found that another chemical, the candidate compound, would improve the propertiesof the paper. ArjoWiggins therefore wish to replace the current compound. To strengthenthe patent requirements for ink adhesion needs to be determined. A theory is developed to whychemicals with certain properties maximize the ink adhesion. Experiments are performed but theresults are inaccurate. The reason for ink adhesion is still unknown.Paper treated with the candidate compound is produced in a production trial and the paper evaluated.The paper shows decreased ink adhesion compared to paper treated with current compoundbut gives higher whiteness, longer shelf life and the formulation is preferred by the milldue to health and safety reasons.

Pure m-plane p-GaN/InGaN/n-GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) had been achieved. V/III ratio of the first layer m-plane GaN is 20 and growth temperature is 665 ¢XC. ¢½/¢» ratio and the growth temperature are the most important factors in the growth sequence. M-InGaN film with better crystal quality was grown successfully by tuning these two factors. We have obtained a narrow window for epitaxial growth of m-plane InGaN/GaN on m-sapphire at 450 ¢XC. The striated surface is along (1120) a-axis direction of m-InGaN epilayer. As the growth temperature is increased further to 550 ¢XC, there is no InGaN signal from x-ray diffraction (XRD). We study the effect of growth condition on the structural properties and morphology of these films using high-resolution x-ray diffractometer (XRD) and scanning electron microscopy (SEM)

The samples this thesis investigated were m-plane nitrides films grown on m-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). Scanning electron microscopy (SEM) images revealed the surface morphologies of the films and thicknesses of the films were measured by cross-sectional scanning electron microscopy. Then we used electron back-scattered diffraction (EBSD) and X-ray diffraction (XRD) to check the growth orientation of the films. The m-plane nitrides films have the anisotropic optical properties were due to the growth orientation of the films. The films are under anisotropic stress since they were grown along m-axis and hence change the electron band structure (EBS), which resulted in anisotropic optical property. We studied the polarization properties of the luminescence at 15 K and 300 K by polarization dependent photoluminescence (PL) and calculated the degree of polarization. And then measured the strain of the m-plane nitrides films by micro-Raman spectroscopy, discussed the degree of polarization and stress. The degree of polarization larger as the anisotropic stress of the film increased.

Epitaxial m-plane (11 ¡Â00) ZnO thin films grown on m-sapphire substrates by atomic layer deposition have been studied. Atomic imaging and electron diffraction conducted in a transmission electron microscope (TEM) and crystallography by X-ray diffractometry all show consistent epitaxial relations with ZnO m-plane // sapphire m-plane, while ZnO [112 ¡Â0] // Al2O3 [0001], and ZnO [0001] // Al2O3 [112 ¡Â0]. The widths (full width at half maximum, or FWHM) of the rocking curves depend on the crystallographic axis of rotation. Dislocations near the interface between the ZnO epi-layers and sapphire substrates can be found from the cross-sectional TEM images when the direction of the incident electron beam, namely, the zone axis, is parallel to ZnO [112 ¡Â0], the a-axis of ZnO. There are stacking faults found in ZnO films away from their interfaces with the substrates. Polarization-dependent photoluminescence by differently polarized incident laser beam have also been investigated. Careful analysis of the spectra via multi-peak fittings revealed optical transitions at 3.32eV for T = 15K, which, however, shifted to 3.28eV at T = 300K. This shift in energy is accounted for by the quadratic temperature dependence of the Fermi level as determined by the positions of the lines of emission corresponding to the band edge transition. The 300K spectrum showed a more distinct peak at 2.48eV when the polarization of the emitted light was along the a-axis of ZnO, as compared to that along the c-axis of ZnO. The origin of this difference remains unaccounted for at the time of writing this thesis. The rest of the peaks have been interpreted in terms of optical transitions involving band gap impurity states, possible exciton formations, and their interactions with phonons.

A superconducting microwave cavity has been designed to test advanced materials for use in the accelerating structures contained within linear colliders. The electromagnetic design of this cavity produces surface magnetic fields on the sample wafer exceeding the critical limit of Niobium. The ability of this cavity to push up to 4 times the critical field provides, for the first time, a short sample method to reproducibly test these thin films to their ultimate limit. In order for this Wafer Test cavity to function appropriately, the large sapphire at the heart of the cavity must have specific inherent qualities. A second cavity was constructed to test these parameters: dielectric constant, loss tangent, and heat capacity. Several tests were performed and consistent values were obtained. The consequences of these measurements were then applied to the Wafer Cavity, and its performance was evaluated for different power inputs. The Q_0 of the cavity could be as low as 10^7 because of the sapphire heating, therefore removing the ability to measure nano-resistances. However, with additional measurements in a less complex environment, such as the Wafer Test Cavity, the Q_0 could be higher than 10^9.