Spelling suggestions: "subject:"semiconductor fhysics"" "subject:"semiconductor ephysics""
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The density of gap states in magnetron sputtered hydrogenated amorphous siliconChahdi, Mohammed January 1986 (has links)
No description available.
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Electron tunnelling and hopping conduction in n-type GaAs/(AlGa)As/GaAs and GaAs semiconductor structuresTaylor, D. C. January 1987 (has links)
No description available.
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Cyclotron resonance studies of GaAs-GaAlAs heterojunctionsBarnes, Debra Julie January 1990 (has links)
No description available.
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Theory of atomic vibrations near crystal interfacesKechrakos, Dimitris January 1989 (has links)
No description available.
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Magneto-optical investigations in layered and multilayered III-IV semiconductorsJohnson, Graham Robert January 1988 (has links)
No description available.
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Optical characterisation and Zeeman studies of dilute magnetic single layer and multiple quantum well structuresGregory, Tiffany Jane January 1990 (has links)
No description available.
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Initial stages of metal- and organic-semiconductor interface formationPalmgren, Pål January 2006 (has links)
<p>This licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy. </p><p>First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. The resulting broken bonds causes As entities to form which are loosely bond to the surface and evaporate upon thermal treatment. Thus, the adsorption of Co results in a rough interface. </p><p>Secondly the metal-free phthalocyanine (H<sub>2</sub>PC) - titanium dioxide interface (organic-semiconductor) is investigated. Here it is found that the organic molecules arrange themselves along the substrate rows upon thermal treatment. The interaction with the TiO<sub>2</sub> is mainly with the valence Π-electrons in the molecule causing a relatively strong bond, but this interaction is short range as the second layer of molecules retains their molecular character. This results in an ordered adsorption but limited mobility of the molecules on the surface prohibiting well ordered close packed layers. Furthermore, the hydrogen atoms inside the cyclic molecule leave the central void upon thermal treatment.</p><p>The third case is the H<sub>2</sub>PC-InAs/InSb interface (organic-semiconductor). Here ordered overlayer growth is found on both substrates where the molecules are preferentially adsorbed on the In rows in the [110] direction forming one-dimensional chains. The InSb-H<sub>2</sub>PC interface is found to be weakly interacting and the bulk-like molecular character is retained upon both adsorption and thermal treatment. On the InAs-H<sub>2</sub>PC interface, however, the interaction is stronger. The molecules are more affected by the surface bond and this effect stretches up a few monolayers in the film after annealing.</p>
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Interactions, localisation and the metal to insulator transition in two-dimensional semiconductor systemsProskuryakov, Yuri January 2003 (has links)
No description available.
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Defects in solids : an ab initio studyBriddon, Patrick Roy January 1990 (has links)
No description available.
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Optical spectroscopy of InxGa1-xAs/GaAs quantum wellsAdams, Stephen J. A. January 1992 (has links)
No description available.
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