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abstract: Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases. / Dissertation/Thesis / M.S. Materials Science and Engineering 2013

<p>The continuous reduction of feature size in silicon-based electronic integrated circuits (ICs) is accompanied by devastating propagation delay time and power consumption that have become known as the “Interconnect Bottleneck”. Optical interconnection is a proposed solution that is poised to revolutionize the data transmission both within and between ICs. By forming the optical transmission and functional elements from silicon, they can be monolithically incorporated with standard ICs using the established CMOS (Complementary Metal Oxide Semiconductor) infrastructure with minimal incremental cost. A key required functional element is the photodetector, which provides optical-toelectrical conversion of signals. In this thesis, a method of achieving such conversion is explored, which uses the optical absorption at 1550 nm wavelengths provided by lattice defects. The physics governing defect-enhanced silicon waveguide photodiode operation is described, and a device model is used to verify the posited detection process and propose design improvements. The model was used to design a novel photodetector structure using a waveguide formed by the LOCOS (LOCal Oxidation of Silicon) process with a poly-silicon self-aligned contact. The fabricated device exhibited a responsivity of 47 mA/W, providing an improvement over previous devices of similar dimensions, although were ultimately limited by the quality of the poly-silicon/silicon interface. A sub-micron waveguide photodiode fabrication process using electron-beam lithography was developed, which produced photodiodes with responsivities of 490 mA/W. This process was used to integrate photodiodes onto micro-ring resonators, which exhibit resonant enhanced photocurrent. The physics of this enhancement were explored, and found to produce a 50 μm long resonant photodiode of responsivity equal to that of a 3 mm long non-resonant photodiode. Lastly, the integration of such sub-micron photodiodes as functioning power monitors throughout photonic circuits was demonstrated as a means to characterize and tune micro-rings during operation.</p> / Doctor of Philosophy (PhD)