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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 101 to 110 of 3258 (0.034 seconds)Spelling suggestions: "subject:"semiconductors."" "subject:"ⅴsemiconductors.""
| 101 |
Hot carrier studies in quantum well structuresMayhew, Nicholas January 1993 (has links)
No description available.
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| 102 |
Magnetotransport studies on new GaSb/InAs heterostructuresSymons, David Malcolm January 1994 (has links)
No description available.
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| 103 |
Cellular growthShangguan, D. K. January 1988 (has links)
No description available.
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| 104 |
Radiofrequency and optical studies of a quantum two dimensional electron systemWright, Philippa Anne January 1991 (has links)
No description available.
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| 105 |
Computational modelling of reactions on gallium arsenide surfacesGoringe, Chris January 1995 (has links)
No description available.
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| 106 |
Magneto-transport studies of GaSb/InAs/GaSb double heterostructuresTakashina, Kei January 2002 (has links)
No description available.
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| 107 |
The electrical characterisation of CdTe, CdMnTe, ZnTe and ZnMnTe layers grown by molecular beam epitaxyDevine, Peter January 1995 (has links)
No description available.
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| 108 |
A study of growth, electrical conductivity and diffusion in (CdMn)TeJamil, Nawfal Yousif January 1990 (has links)
No description available.
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| 109 |
Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)As and (GaIn)(AsP) alloysButler, Barry R. January 1989 (has links)
No description available.
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| 110 |
Negative bias temperature instability (NBTI) experimentSchuster, Christopher Mark. 06 1900 (has links)
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress. A normal applied electrical bias on CMOS transistors can lead to the generation of interface states at the junction of the gate oxide and the transistor channel. The hydrogen that normally passivates the interface states can diffuse away from the interface. As a result, the threshold voltage and transconductance will change. These interface states can be measured to determine the susceptibility to NBTI of the devices. For this purpose, a charge pumping experiment and other On-the-Fly techniques at certain temperatures can provide the interface state density and other valuable data. NBTI can impact current technological fabrication processes, such as those provided to the government from IBM. This paper explains this testing of current submicron transistor technology that will be used for military applications. / US Navy (USN) author.
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