This thesis reports the development of two rapid thermal annealing systems, one based on resistive heating of graphite strips, the second on heating from incoherent lamp radiation. Electrical activation studies of silicon implanted gallium arsenide has been used to compare the systems with those available commercially. It has been shown that commercial systems can yield temperature measurement errors in excess of 50° C. Furthermore, the systems have been used to investigate the electrical activation of silicon implants co-implanted with other ions into gallium arsenide, with a view to either, improving the activation of the silicon for high doses, or modifying the carrier profile shape for low doses. A factor of two improvement in the electrical activation of high dose silicon implants has been achieved by the co-implantation of phosphorus, with a reduction in the annealing temperature required to achieve a given activity also being observed. An alternative processing methodology is also proposed for through- nitride implantation. Phosphorus implants have also been used to "pre-amorphise" substrates to prevent ion channelling. Providing the damage is maintained below a certain level, improvements in profile shape can be obtained. Other compensation techniques using boron and carbon implants have also been investigated. Boron has been demonstrated to provide improved carrier activation for low implant doses, with thermally stable profile modification capability as the dose is increased. The electrical activation of single carbon implants (40% maximum) is below the level of compensation of silicon implants (approximately 90%) co-implanted with carbon. This in turn means carbon is excellent for profile modification as no p-type layer is created beyond the donor implant.

No description available.

Thesis (Ph. D.)--Lehigh University, 1998. / Includes vita. Includes bibliographical references (leaves 76-80).

Thesis (M.S.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on June 29, 2010). Bibliography: leaves 56-66.

A dissertation submitted to the Faculty of Science, Wits University, in fulfilment of the requirements for the degree of Master of Science. 30 March 2016. / Bismuth ferrite BiFeO3 is a transition metal oxide that exhibits both antiferromagnetic and ferroelectric orderings and is termed a magnetoelectric multiferroic. These functional properties make it crucial for applications in various nanoelectronic devices and sensors. However, the integration of BiFeO3 in devices requires the scaling down of bulk BiFeO3 to nano dimensional length scales in thin lm format. For this purpose, the elements of the elastic constant tensor of BiF eO3 thin lms are requisite, especially in multilayered or single layer-on-substrate device con gurations. It is thus essential that mechanical properties of BiFeO3 thin lms be established due to their size and growth mode dependence. Therefore, the study aims to determine the propagation of the surface acoustic waves and the elastic constants of BiFeO3 BFO thin lms in order to tailor the mechanical properties for device applications. In this approach the e ect of morphology and microstructure on the elastic constants has been investigated. / MT2016

Thesis (M. App. Sc.)--Carleton University, 2004. / Includes bibliographical references (p. 95-98). Also available in electronic format on the Internet.