Spelling suggestions: "subject:"semiconductors. nitrides."" "subject:"semiconductors. ⅴnitrides.""
1 |
Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performanceEJessen, Gregg Huascar. January 2002 (has links)
Thesis (Ph. D)--Ohio State University, 2002. / Title from first page of PDF file. Document formatted into pages; contains xxx,198 p.: ill. (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 188-198).
|
2 |
Effects of plasma species during the molecular-beam epitaxy growth of dilute nitride semiconductors for infrared optoelectronic device applicationsOye, Michael Mikio, January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.
|
3 |
III-nitride semiconductors grown by plasma assisted molecular beam epitaxyHe, Lei, January 1900 (has links)
Thesis (Ph.D.) -- Virginia Commonwealth University, 2004. / Title from title-page of electronic thesis. Prepared for: Dept. of Electrical Engineering. Bibliography: p. 114-125.
|
4 |
Design, fabrication and characterization of III-nitride PN junction devicesLimb, Jae Boum. January 2007 (has links)
Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / William Doolittle, Committee Member ; Joy Laskar, Committee Member ; Russell Dupuis, Committee Chair ; David Citrin, Committee Member ; Srinivas Garimella, Committee Member.
|
5 |
Growth, structural, electronic and optical characterization of nitride semiconductorsConstantin, Costel. January 2005 (has links)
Thesis (Ph.D.)--Ohio University, November, 2005. / Title from PDF t.p. Includes bibliographical references (p. 89-93)
|
Page generated in 0.0566 seconds