The 1/4£f dual-mode resonators made from c-axis-oriented aluminum nitride films grown on different conduction material have been studied in this thesis. The RF/DC sputter system is used to grow on layers of reflector. During the porcess, 3.5 pairs of Bragg reflector alternating with W and SiO2 are composed by Si substractor. To achieve 0.999 reflective rate, fabrication parameters are adjusted to make W films become £\-phase structurre. On the other hand, piezoelectric layers as well as reflective layers that using reactive RF magnetron sputtering system and means of off-axis are combined to deposite optimal resonators of shear mode quality factor (Q) resonatros. While changing the substract and target distance between various bottom electrode materials, including Si, W/Si, and Mo/Si could deposit AlN with various c-axis tilting angle which resulted in stimulating longitudinal and shear acoustic waves. Futhermore, the finding is used to discuss the growth mechanism of inclined AlN by TEM. The analysis of various distances of AlN films shows that column inclining angle and XRD-Rocking Curve £s will increase with distance. The quality of shear mode would be better when column and £s are highly shifed. About the influence on AlN deposites, AlN/Si was grown away from the center by 6 cm. AlN/Si column inclining angle is about 20 degree, and RMS could reach 2.63nm beneath. Uner AlN/W/Si, column incling angle is about 30 degree, and £s shift angle 4.14 degree, the shear mode quality factor of freaquency response is obtained to 262. Under AlN/Mo/W/Si, column incling angle would be 25.4 degree, and XRD are better-choosed c-aixsm, £s tilting angle shifs 6.72 degree, and the shear mode quality factor is obtained to 290. Film intersurface appears bigger misfit by TEM to obtain better shear mode.