Thesis (Ph.D.) -- University of Texas at Arlington, 2008.

No description available.

Thesis (M.S.)--California Polytechnic State University, 2008. / Major professor: Dennis Derickson, Ph.D. "Presented to the faculty of California Polytechnic State University, San Luis Obispo." "In partial fulfillment of the requirements for the degree [of] Master of Science in Electrical Engineering." "May 2008." Includes bibliographical references (leaves 147-149). Also available on microfiche (3 sheets).

Typescript (photocopy). / Digitized by Kansas State University Libraries

Thesis (M.E.E.)--University of Delaware, 2006. / Principal faculty advisor: Fouad Kiamilev, Dept. of Electrical and Computer Engineering. Includes bibliographical references.

The objectives of this research lie in the area of millimeter and submillimeter wave signal generation and are directed into two paths that are separate, but related. The first involves the development of a W-Band oscillator using Raytheon's Metamorphic High Electron Mobility Transistor (MHEMT) substrate. The second involves the development of silicon formed rectangular waveguide to replace metallic waveguide, ultimately to be used in THz signal source circuits. An exploration of two different topologies for a W-Band oscillator design utilizing Raytheon s MHEMT substrate is presented. This material will demonstrate the reasoning behind the topology selection and the approach of the design. An evaluation of this first ever W-Band MHEMT oscillator will be presented demonstrating its performance capabilities. Finally, an oscillator design will be presented extending the first successful MHEMT W-Band design. The area of Silicon rectangular waveguide with is covered. A design approach of the silicon waveguide will be discussed. The technology used to fabricate and package the silicon waveguide will be explained. The results of the very first 400 GHz silicon waveguide will be shown and the future efforts will be covered. A silicon micromachined waveguide multiplier using an HBV diode circuit is constructed and successfully demonstrated with an output frequency of 261 GHz, showing little difference between using micromachined waveguide and metal waveguide. Lastly, a power combining frequency multiplier is developed utilizing HBV diodes with an output of 260 GHz. The input and output sections are created using branch line couplers. The results showed good power generation as compared to a single diode multiplier.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007. / Committee Chair: Adibi, Ali; Committee Member: Chang, Gee-Kung; Committee Member: Ralph, Stephen.

QC 351 A7 no. 78 / Observers responded to abstract forms (quadrigons) in six experiments, under a signal detection paradigm. Duration of stimulus exposure was shown to have strong effects upon detection accuracy (two studies); immediate feedback of accuracy information to observers affected performance chiefly by influencing guessing bias, not sensitivity (two studies); images that had been blurred and then deblurred by means of an analog device were compared with unblurred originals, and the effects of the retrieval process (deblurring) were characterized quantitatively by a signal detection index (one study); and electroencephalographic correlates of signal detection responses were found to vary with performance accuracy and observer confidence (one study). Discussions of the theory of signal detectability and of electroencephalography, as tools in the study of image quality and of observer sensitivity, are included in the report.

<p>Spectrally pure signals are an indispensable requirement when the Signal Generator (SG) is to be used as part of a test bed. However, even sophisticated equipment may not comply with the needs imposed by certain applications. This work approaches the problem by using Digital Pre-Distortion (DPD) based on a polynomial memory-less model obtained for the SG.</p><p>Using the SG in arbitrary mode (ARB) an input signal is computer-generated and reproduced by the SG. Measurement accuracy is ensured using coherence sampling and grid matching to the Signal Analyzer (SA). Finally, careful time alignment is used to compare the transmitted and received three-tone signals to obtain the polynomials coefficients.</p><p>Results show that the accuracy of the model and the effectiveness of pre-distortion may vary depending on the amplitude of the three-tone signal. However, using polynomials of 5th and 9th degrees up to 15dB reduction of the 3rd order Inter-Modulation products can be obtained, and spurious powers may be lowered down to 70dBc.</p>

Silicon Germanium BiCMOS technology has been demonstrated as an ideal platform for highly integrated systems requiring both high performance analog and RF circuits as well as large-scale digital functionality. Frequency synthesizers are ideal candidates for this technology because the mixed-signal nature of modern frequency synthesis designs fundamentally requires both digital and analog signal processing. This research targets three areas to improve SiGe frequency synthesizers. A majority of this work focuses on applying SiGe frequency synthesizers to extreme environment applications such as space, where low temperatures and ionizing radiation are significant design issues to contend with. A second focus area involves using SiGe HBTs to minimize noise in frequency synthesizer circuits. Improved low frequency "pink" noise in SiGe HBTs provide a significant advantage over CMOS devices, and frequency synthesis circuits are significantly affected by this type of noise. However, improving thermal "white" noise is also considered. Finally, an analysis of AM-PM distortion is considered for SiGe HBTs. The studies presented focus on identifying the physical mechanisms of observed phenomena, such as single event transients or phase noise characteristics in oscillators. The ultimate goal of this research is to provide a reference of effective design parameters for circuit and system designers seeking to take advantage of the properties of SiGe device physics.