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Investigation of tungsten gate fully depleted SOI CMOS devices and circuits for ultra-low voltage applications /Shang, Huiling, January 2001 (has links)
Thesis (Ph. D.)--Lehigh University, 2001. / Includes vita. Includes bibliographical references (leaves 118-130).
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Bragg Grating Integrated on Silicon-on-Insulator WaveguideWang, Hao 09 1900 (has links)
This thesis details the design, fabrication and measurement of an integrated optical Bragg grating filter, operating at a free space wavelength of 1532 nm, based on silicon-on-insulator (SOI) ridge waveguide.
Grating-based integrated devices can interact with optical signals in photonic integrated circuits (PIC) in such a way as to selectively transmit, reflect or detect the signals that are resonant with these devices. Channel filters can access one channel of a wavelength division multiplexed signal without disturbing the other channels and are therefore important elements in WDM communications. Resonator filters are attractive candidates because they can potentially realize the narrowest linewidth for a given device size. Device models for this kind of device are developed by using the MATLAB programming language. Coupled mode theory (CMT) for filters, and the effective index method (EIM) which reduces a three dimensional (3D) analysis into two dimensions is used as modeling theoretical background. Computer modeling identifies the effect of device structure on the performance of the devices, and is also used to predict the output characteristics of this kind of device. This provides an understanding of device physics and operation, and a basis for comparison with experimental results. A common fabrication sequence for integrated optical Bragg grating filters based on SOI ridge waveguides is designed, developed and demonstrated. This includes the photomask for optical ridged waveguide, interferometic lithography for grating pattern and high accuracy RIE etching. This work demonstrates Bragg grating as a technology for realizing PIC in SOI material system, and presents the technology required to design, fabricate, characterize, and model these integrated devices. / Thesis / Master of Applied Science (MASc)
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Design and study of an electron beam system for silicon recrystallizationZissis, Nikolaos January 1992 (has links)
No description available.
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SOI smart multi-sensor platform for harsh environment applicationsDe Luca, Andrea January 2016 (has links)
No description available.
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The thermal effects of self heating of transistors on analog amplifier design ad evaluationSinha, Kamal Ranjan. January 2008 (has links)
Thesis (Ph.D.)--University of Texas at Arlington, 2008.
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Testability and fault modeling of partially depleted silicon-on-insulator integrated circuitsMacDonald, Eric William. January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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Testability and fault modeling of partially depleted silicon-on-insulator integrated circuitsMacDonald, Eric William 05 May 2011 (has links)
Not available / text
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Fabrication of SOI micromechanical devices /Kiihamäki, Jyrki. January 1900 (has links) (PDF)
Thesis (doctoral)--Helsinki University of Technology, 2005. / Includes bibliographical references. Also available on the World Wide Web.
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Microphotonic silicon waveguide components /Aalto, Timo. January 1900 (has links) (PDF)
Thesis (doctoral)--Helsinki University of Technology, 2004. / Includes bibliographical references. Also available on the World Wide Web.
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Optical properties and applications of silicon waveguides.January 2002 (has links)
Liang Tak Keung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract --- p.I / Acknowledgement --- p.IV / Table of contents --- p.V / List of figures --- p.VIII / Chapter Chapter 1: --- Introduction --- p.1 / Chapter 1.1 --- Introduction to silicon waveguides --- p.2 / Chapter 1.2 --- Introduction to characterization of silicon waveguides --- p.5 / Chapter 1.3 --- Introduction to applications of silicon waveguides --- p.6 / Chapter 1.4 --- Introduction to chapters --- p.7 / References --- p.9 / Chapter Chapter 2: --- Modal analysis of the single-mode silicon waveguide --- p.12 / Chapter 2.1 --- Waveguide structure --- p.13 / Chapter 2.2 --- Effective Index Method --- p.14 / Chapter 2.3 --- Silicon waveguide modal analysis --- p.20 / Chapter 2.4 --- Conclusion --- p.25 / References --- p.26 / Chapter Chapter 3: --- Optical dispersion --- p.27 / Chapter 3.1 --- Introduction --- p.28 / Chapter 3.1.1 --- Chromatic dispersion --- p.28 / Chapter 3.1.2 --- Polarization-mode dispersion --- p.33 / Chapter 3.2 --- Review of dispersion measurement technique --- p.35 / Chapter 3.2.1 --- Chromatic dispersion measurement --- p.35 / Chapter 3.2.2 --- Polarization-mode dispersion measurement --- p.39 / Chapter 3.3 --- Measurement of chromatic dispersion in silicon waveguide --- p.40 / Chapter 3.3.1 --- Experimental setup --- p.40 / Chapter 3.3.2 --- Measurement theory --- p.41 / Chapter 3.3.3 --- Results and discussions --- p.43 / Chapter 3.4 --- Measurement of polarization-mode dispersion in silicon waveguide --- p.49 / Chapter 3.4.1 --- Experimental setup --- p.49 / Chapter 3.4.2 --- Simulation results --- p.50 / Chapter 3.4.3 --- Results and discussions --- p.51 / Chapter 3.5 --- Conclusion --- p.53 / References --- p.54 / Chapter Chapter 4: --- Nonlinear properties --- p.56 / Chapter 4.1 --- Introduction --- p.57 / Chapter 4.1.1 --- Nonlinear refractive index (optical Kerr effect) --- p.57 / Chapter 4.1.2 --- Self-phase modulation --- p.58 / Chapter 4.1.3 --- Two-photon absorption --- p.59 / Chapter 4.1.4 --- Impact of nonlinearities on waveguides --- p.60 / Chapter 4.2 --- Measurement of nonlinear refractive index n2 and TPA coefficient β2 --- p.61 / Chapter 4.2.1 --- Nonlinear refractive index (n2) --- p.62 / Chapter 4.2.2 --- TPA coefficient (β2) --- p.63 / Chapter 4.2.3 --- Conclusion --- p.65 / References --- p.66 / Chapter Chapter 5: --- Loss in ion-implanted silicon waveguide --- p.67 / Chapter 5.1 --- Introduction to ion implantation --- p.68 / Chapter 5.2 --- Ion-implantation process --- p.70 / Chapter 5.3 --- Loss measurement by Fabry-Perot interferometer --- p.72 / Chapter 5.4 --- Results and discussions --- p.73 / References --- p.75 / Chapter Chapter 6: --- Silicon waveguide autocorrelator --- p.76 / Chapter 6.1 --- Introduction on SHG and waveguide autocorrelation technique --- p.77 / Chapter 6.2 --- Theory of TPA absorption --- p.79 / Chapter 6.3 --- Two-photon-induced photocurrent in silicon waveguide --- p.80 / Chapter 6.3.1 --- Device structure --- p.80 / Chapter 6.3.2 --- Intensity dependent photocurrent generation --- p.81 / Chapter 6.3.3 --- Theoretical modeling of photocurrent generation --- p.83 / Chapter 6.4 --- Autocorrelation measurement of short pulses --- p.87 / Chapter 6.4.1 --- Experimental setup --- p.87 / Chapter 6.4.2 --- Results and discussions --- p.88 / Chapter 6.5 --- Conclusion --- p.92 / References --- p.93 / Chapter Chapter 7: --- Conclusion and future works --- p.94 / Chapter 7.1 --- Conclusion --- p.94 / Chapter 7.2 --- Future works --- p.95 / Appendices --- p.96 / Appendix A: Silicon waveguide fabrication process capability at CUHK --- p.96 / Appendix B: Matlab programs of EIM and TPA calculation --- p.100 / Appendix C: Publications list --- p.104
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