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Performance of devices made of large band-gap semiconductors, SiC and GaNOkayama, Taizo, January 2007 (has links)
Thesis (Ph. D.)--George Mason University, 2007. / Title from PDF t.p. (viewed Jan. 21, 2008). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 128. Includes bibliographical references (p. 122-127). Also available in print.
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Ultra-fast high temperature microwave processing of silicon carbide and gallium nitrideSundaresan, Siddarth G., January 2007 (has links)
Thesis (Ph.D.)--George Mason University, 2007. / Title from PDF t.p. (viewed Oct. 29, 2007). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 170. Includes bibliographical references (p. 160-169). Also available in print.
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Metal contacts to silcon carbide and galliumnitride studied with ballistic electron emission microscopyIm, Hsung Jai. January 2001 (has links)
Thesis (Ph. D.)--Ohio State University, 2001. / Title from first page of PDF file. Document formatted into pages; contains xiii, 165 p.; also contains graphics (some col.). Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 160-165).
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Growing of GaN on vicinal SiC surface by molecular beam epitaxy /Cheung, Sau-ha. January 2002 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2002. / Includes bibliographical references (leaves 68-71).
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