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Process development for a silicon carbide micro four-point probeChoudhury, Arnab, January 2003 (has links) (PDF)
Thesis (M.S. in M.E.)--School of Mechanical Engineering, Georgia Institute of Technology, 2004. Directed by Peter J. Hesketh. / Includes bibliographical references (leaves 152-160).
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The fabrication and characterization of ion-implanted germanium-incorporated silicon-carbide diodes and transistorsLang, Matthias. January 2006 (has links)
Thesis (M.C.E.)--University of Delaware, 2006. / Principal faculty advisor: James Kolodzey, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
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Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonideLam, Chi-hung, January 2005 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.
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Construction of a positron-lifetime spectrometer and its application to studying electron irradiation induced defects in 6H silicon carbideLam, Tat-wang. January 2003 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2005. / Title proper from title frame. Also available in printed format.
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