Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.

McMaster University DOCTOR OF PHILOSOPHY (2017) Hamilton, Ontario (Engineering Physics) TITLE: Luminescent Silicon Carbonitride Thin Films Grown using ECR PECVD: Fabrication and Characterization AUTHOR: Zahra Khatami , M.A.Sc. (Shahid Behehsti University) SUPERVISOR: Professor Peter Mascher NUMBER OF PAGES: xx, 268 / Silicon, the cornerstone semiconductor of microelectronics, has seen growing interest as a low-cost material in photonics. Nanoscience has employed various strategies to overcome its fundamentally inefficient visible light emission such as developing new silicon-based nanostructures and materials. Each of the proposed materials has its own advantages and disadvantages in attempting to reach commercialization. Silicon carbonitride (SiCxNy) is a less-studied and multi-functional material with tunable optical features. Despite reports on promising mechanical properties of SiCxNy thin films, they have not yet been well explored optically. This thesis presents the first in-depth analysis of the luminescent properties of SiCxNy thin films at a broad range of compositions and temperatures. To better understand this ternary structure, the reported data of the two fairly well studied binary structures was used as a reference. Therefore, three classes of silicon-based materials were produced and explored; SiCxNy, SiNx, and SiCx. Samples were fabricated using one of the common methods in the semiconductor industry; electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR PECVD). A multitude of characterization techniques were utilized including; optical methods (ultraviolet-visible spectroscopy (UVVIS), variable angle spectroscopic ellipsometry (VASE), photoluminescence (PL)) and structural techniques (elastic recoil detection (ERD), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), high-resolution transmission electron microscopy (HR-TEM)). In view of the exploring of emission properties of SiCxNy materials, our approach was towards the enhancement of the visible emission by adjusting the film composition and subsequent thermal treatment. First, a systematic study of the influence of carbon on the optical, compositional, and structural properties of SiCxNy was carried out. This investigation was followed by an exploration of influence of growth conditions on the visible emission and its connection with the other film properties including hydrogen concentration, microstructure, and composition. In addition, hydrogen diffusion was explored and associated with two featured annealing temperatures. The key element of this thesis is the comprehensive report on the interdependency of the visible light emission and all optical, structural, and compositional features of SiCxNy structures. Unlocking the potential of this ternary and less studied material can appeal to the silicon photonics community to implement it in anti-reflection, solar cell, and sensing applications, and in particular as a substitution of SiNx used in existing microelectronic devices. / Thesis / Doctor of Philosophy (PhD)

The global energy market is continuously changing due to changes in demand and fuel availability. Amongst the technologies considered as capable of fulfilling these future energy requirements, Photovoltaics (PV) are one of the most promising. Currently the majority of the PV market is fulfilled by crystalline Silicon (c-Si) solar cell technology, the so called 1st generation PV. Although c-Si technology is well established there is still a lot to be done to fully exploit its potential. The cost of the devices, and their efficiencies, must be improved to allow PV to become the energy source of the future. The surface of the c-Si device is one of the most important parts of the solar cell as the surface defines the electrical and the optical properties of the device. The surface is responsible for light reflection and charge carrier recombination. The standard surface finish is a thin film layer of silicon nitride deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). In this thesis an alternative technique of coating preparation is presented. The HiTUS sputtering tool, utilising a remote plasma source, was used to deposit the surface coating. The remote plasma source is unique for solar cells application. Sputtering is a versatile process allowing growth of different films by simply changing the target and/or the deposition atmosphere. Apart from silicon nitride, alternative materials to it were also investigated including: aluminium nitride (this was the first use of the material in solar cells) silicon carbide, and silicon carbonitride. All the materials were successfully used to prepare solar cells apart from the silicon carbide, which was not used due to too high a refractive index. Screen printed solar cells with a silicon nitride coating deposited in HiTUS were prepared with an efficiency of 15.14%. The coating was deposited without the use of silane, a hazardous precursor used in the PECVD process, and without substrate heating. The elimination of both offers potential processing advantages. By applying substrate heating it was found possible to improve the surface passivation and thus improve the spectral response of the solar cell for short wavelengths. These results show that HiTUS can deposit good quality ARC for silicon solar cells. It offers optical improvement of the ARC s properties, compared to an industrial standard, by using the DL-ARC high/low refractive index coating. This coating, unlike the silicon nitride silica stack, is applicable to encapsulated cells. The surface passivation levels obtained allowed a good blue current response.

Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.

Silicon was selectively removed from a silicon carbonitride (SiCN) aerogel by hot chlorine gas treatment, leading to a N-doped carbon aerogel (N-CDC aerogel). The combined effects of pyrolysis and etching temperature were studied with regard to the change in the composition of the material after etching as well as the microstructure of the produced hierarchically porous material. Upon removal of Si from amorphous SiCN, carbon and nitrogen, which are not bonded together in the starting material, react, creating new C–N bonds. The removal of silicon also gives rise to a high amount of micropores and hence a high specific surface area, which can be beneficial for the functionality of the carbonaceous material produced. The mesoporous structure of the aerogel allows us to complete the etching at low temperature, which was found to be a crucial parameter to maintain a high amount of nitrogen in the material. The combination of a high amount of micropores and the mesopore transport system is beneficial for adsorption processes due to the combination of a high amount of adsorption sites and effective transport properties of the material. The N-CDC aerogels were characterized by nitrogen physisorption, X-ray photoelectron spectroscopy (XPS), thermogravimetry (TG/DTA), and infrared spectroscopy (DRIFT) and they were evaluated as CO2 absorbers and as electrodes for electric double-layer capacitors (EDLCs).

Silicon was selectively removed from a silicon carbonitride (SiCN) aerogel by hot chlorine gas treatment, leading to a N-doped carbon aerogel (N-CDC aerogel). The combined effects of pyrolysis and etching temperature were studied with regard to the change in the composition of the material after etching as well as the microstructure of the produced hierarchically porous material. Upon removal of Si from amorphous SiCN, carbon and nitrogen, which are not bonded together in the starting material, react, creating new C–N bonds. The removal of silicon also gives rise to a high amount of micropores and hence a high specific surface area, which can be beneficial for the functionality of the carbonaceous material produced. The mesoporous structure of the aerogel allows us to complete the etching at low temperature, which was found to be a crucial parameter to maintain a high amount of nitrogen in the material. The combination of a high amount of micropores and the mesopore transport system is beneficial for adsorption processes due to the combination of a high amount of adsorption sites and effective transport properties of the material. The N-CDC aerogels were characterized by nitrogen physisorption, X-ray photoelectron spectroscopy (XPS), thermogravimetry (TG/DTA), and infrared spectroscopy (DRIFT) and they were evaluated as CO2 absorbers and as electrodes for electric double-layer capacitors (EDLCs).