• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 53
  • 7
  • 3
  • Tagged with
  • 68
  • 68
  • 16
  • 9
  • 9
  • 8
  • 7
  • 7
  • 7
  • 7
  • 6
  • 6
  • 6
  • 6
  • 5
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
21

Electrical characteristics of Al/Si contacts formed by recoil implantation.

January 1987 (has links)
by Wah-chung Wong. / Thesis (M.Ph.)--Chinese University of Hong Kong, 1987. / Bibliography: leaves 155-162.
22

SiCl4 desorption in chlorine etching of Si(100): a first principle study.

January 1999 (has links)
Chan Siu-pang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 45-47). / Abstract also in Chinese. / TITLE PAGE --- p.i / THESIS COMMUTE --- p.ii / ABSTRACT (English) --- p.iii / ABSTRACT (Chinese) --- p.iv / ACKNOWLEDGMENT --- p.v / TABLE OF CONTENTS --- p.vi / LIST OF FIGURES --- p.vii / LIST OF TABLES --- p.viii / Chapter CHAPTER 1. --- Introduction --- p.1 / Chapter Section 1.1. --- General Introduction --- p.1 / Chapter Section 1.2. --- Background Information --- p.2 / Chapter 1.2.1. --- Si(100) Surface --- p.2 / Chapter 1.2.2. --- Structure of Cl/Si(100) --- p.7 / Chapter Section 1.3. --- Etching of Si(100) by Chlorine --- p.9 / Chapter Section 1.4. --- Theory --- p.14 / Chapter Section 1.5. --- Computational Model --- p.17 / Chapter CHAPTER 2. --- Desorption Mechanism of SiCl4 --- p.19 / Chapter Section 2.1. --- Desorption Mechanism --- p.19 / Chapter 2.1.1. --- Trajectory1 --- p.20 / Chapter 2.1.2. --- Trajectory2 --- p.23 / Chapter 2.1.3. --- Trajectory3 --- p.26 / Chapter 2.1.4. --- Trajectory4 --- p.29 / Chapter 2.1.5. --- Trajectory5 --- p.32 / Chapter 2.1.6. --- Trajectory6 --- p.35 / Chapter Section 2.2. --- Discussion --- p.38 / Chapter Section 2.3. --- Conclusion --- p.44 / REFERENCES: --- p.45
23

Phase and microstructure of FeSi₂ thin films. / 硅化鐵薄膜的相和微觀結構 / Phase and microstructure of FeSi₂ thin films. / Gui hua tie bo mo de xiang he wei guan jie gou

January 2006 (has links)
Chong Yuen Tung = 硅化鐵薄膜的相和微觀結構 / 莊宛曈. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 63-65). / Text in English; abstracts in English and Chinese. / Chong Yuen Tung = Gui hua tie bo mo de xiang he wei guan jie gou / Zhuang Wantong. / Abstract --- p.i / 摘要 --- p.ii / Acknowledgment --- p.iii / Table of contents --- p.iv / List of Figures --- p.viii / List of Tables --- p.x / Chapter CHAPTER 1: --- Introduction --- p.1 / Chapter CHAPTER 2: --- Background --- p.4 / Chapter 2.1 --- Phases of crystalline FeSi2 --- p.4 / Chapter 2.2 --- Electronic structure of β-FeSi2 --- p.7 / Chapter 2.3 --- Orientation relationship between β-FeSi2 and Si --- p.8 / Chapter CHAPTER 3: --- Instrumentation --- p.10 / Chapter 3.1 --- Metal vapor vacuum arc ion source implantation --- p.10 / Chapter 3.2 --- Rutherford backscattering --- p.12 / Chapter 3.3 --- Transmission Electron Microscopy (TEM) --- p.13 / Chapter 3.3.1 --- Principles of TEM --- p.13 / Chapter 3.3.2 --- Electron specimen interaction and contrast --- p.14 / Chapter 3.3.3 --- Electron Diffraction --- p.15 / Chapter 3.3.4 --- Sample Preparation --- p.17 / Chapter 3.3.4.1 --- Plan-view sample --- p.17 / Chapter 3.3.4.2 --- Cross-section sample --- p.17 / Chapter CHAPTER 4: --- FeSi2 films fabricated by ion implantation --- p.18 / Chapter 4.1 --- Introduction --- p.18 / Chapter 4.2 --- Experimental details --- p.18 / Chapter 4.3 --- Ion energy series --- p.19 / Chapter 4.3.1 --- As-implanted sample --- p.19 / Chapter 4.3.1.1 --- Results --- p.20 / Chapter 4.3.1.2 --- Discussions --- p.20 / Chapter 4.3.2 --- Annealed samples --- p.24 / Chapter 4.3.2.1 --- Morphology of the annealed samples and the damage on Si substrate --- p.24 / Chapter 4.3.2.2 --- Identification of the FeSi2 phase and their orientation relationship with the Si matrix --- p.24 / Chapter 4.3.2.3 --- Photoluminescence of the samples --- p.26 / Chapter 4.3.2.4 --- Discussions --- p.26 / Chapter 4.4 --- Ion dosage series --- p.31 / Chapter 4.4.1 --- Results --- p.31 / Chapter 4.4.2 --- Discussions --- p.32 / Chapter 4.5 --- Summary --- p.36 / Chapter CHAPTER 5: --- Effect of post annealing on the phase and microstructure of FeSi2 --- p.37 / Chapter 5.1 --- Introduction --- p.37 / Chapter 5.2 --- Experimental details --- p.37 / Chapter 5.3 --- The correlation between microstructure of FeSi2 synthesized under different annealing conditions and their PL --- p.38 / Chapter 5.3.1 --- RTA series --- p.38 / Chapter 5.3.1.1 --- Results --- p.38 / Chapter 5.3.1.2 --- Discussions --- p.39 / Chapter 5.3.2 --- FA series --- p.42 / Chapter 5.3.2.1 --- Results --- p.42 / Chapter 5.3.2.2 --- Discussions --- p.44 / Chapter 5.3.3 --- RTAFA series --- p.45 / Chapter 5.3.3.1 --- Results --- p.45 / Chapter 5.3.3.2 --- Discussions --- p.45 / Chapter 5.4 --- The existence of alpha phase and its special shape --- p.51 / Chapter 5.4.1 --- Results --- p.51 / Chapter 5.4.2 --- Discussions --- p.52 / Chapter 5.5 --- The existence of gamma phase in 1050°C furnace annealed sample / Chapter 5.5.1 --- Results --- p.56 / Chapter 5.5.2 --- Discussions --- p.57 / Chapter 5.6 --- Summary --- p.59 / Chapter CHAPTER 6: --- Conclusions --- p.61 / References --- p.63
24

A process for hydrogenation of silicon carbide crystals

Rao, Yeswanth Lakshman. January 2001 (has links)
Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.
25

Second harmonic spectroscopy of silicon nanocrystals

Figliozzi, Peter Christopher, 1972- 28 August 2008 (has links)
Using a novel two-beam technique developed to greatly enhance quadrupolar contributions to the second-order nonlinear polarization, we performed a nonlinear spectroscopic study of silicon nanocrystals implanted in an SiO₂ matrix.
26

A universal species ion implantation model for implants into topographically complex structures with multiple materials

Chen, Yang, 1973- 07 March 2011 (has links)
Not available / text
27

Some positron annihilation studies on highly doped and supersaturated N-type silicon

Ho, King-fung., 何競豐. January 2004 (has links)
published_or_final_version / abstract / toc / Physics / Doctoral / Doctor of Philosophy
28

Second harmonic spectroscopy of silicon nanocrystals

Figliozzi, Peter Christopher, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
29

Effect of dislocation density on residual stress in polycrystalline silicon wafers

Garcia, Victoria. January 2008 (has links)
Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2008. / Committee Chair: Danyluk, Steven; Committee Member: Melkote, Shreyes; Committee Member: Rohatgi, Ajeet.
30

An optical and magnetic resonance study of point defects in silicon, diamond, and aluminum nitride /

Mason, Philip Wayne, January 1997 (has links)
Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Includes bibliographical references.

Page generated in 0.0808 seconds