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Electrical characteristics of Al/Si contacts formed by recoil implantation.January 1987 (has links)
by Wah-chung Wong. / Thesis (M.Ph.)--Chinese University of Hong Kong, 1987. / Bibliography: leaves 155-162.
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SiCl4 desorption in chlorine etching of Si(100): a first principle study.January 1999 (has links)
Chan Siu-pang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 45-47). / Abstract also in Chinese. / TITLE PAGE --- p.i / THESIS COMMUTE --- p.ii / ABSTRACT (English) --- p.iii / ABSTRACT (Chinese) --- p.iv / ACKNOWLEDGMENT --- p.v / TABLE OF CONTENTS --- p.vi / LIST OF FIGURES --- p.vii / LIST OF TABLES --- p.viii / Chapter CHAPTER 1. --- Introduction --- p.1 / Chapter Section 1.1. --- General Introduction --- p.1 / Chapter Section 1.2. --- Background Information --- p.2 / Chapter 1.2.1. --- Si(100) Surface --- p.2 / Chapter 1.2.2. --- Structure of Cl/Si(100) --- p.7 / Chapter Section 1.3. --- Etching of Si(100) by Chlorine --- p.9 / Chapter Section 1.4. --- Theory --- p.14 / Chapter Section 1.5. --- Computational Model --- p.17 / Chapter CHAPTER 2. --- Desorption Mechanism of SiCl4 --- p.19 / Chapter Section 2.1. --- Desorption Mechanism --- p.19 / Chapter 2.1.1. --- Trajectory1 --- p.20 / Chapter 2.1.2. --- Trajectory2 --- p.23 / Chapter 2.1.3. --- Trajectory3 --- p.26 / Chapter 2.1.4. --- Trajectory4 --- p.29 / Chapter 2.1.5. --- Trajectory5 --- p.32 / Chapter 2.1.6. --- Trajectory6 --- p.35 / Chapter Section 2.2. --- Discussion --- p.38 / Chapter Section 2.3. --- Conclusion --- p.44 / REFERENCES: --- p.45
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Phase and microstructure of FeSi₂ thin films. / 硅化鐵薄膜的相和微觀結構 / Phase and microstructure of FeSi₂ thin films. / Gui hua tie bo mo de xiang he wei guan jie gouJanuary 2006 (has links)
Chong Yuen Tung = 硅化鐵薄膜的相和微觀結構 / 莊宛曈. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 63-65). / Text in English; abstracts in English and Chinese. / Chong Yuen Tung = Gui hua tie bo mo de xiang he wei guan jie gou / Zhuang Wantong. / Abstract --- p.i / 摘要 --- p.ii / Acknowledgment --- p.iii / Table of contents --- p.iv / List of Figures --- p.viii / List of Tables --- p.x / Chapter CHAPTER 1: --- Introduction --- p.1 / Chapter CHAPTER 2: --- Background --- p.4 / Chapter 2.1 --- Phases of crystalline FeSi2 --- p.4 / Chapter 2.2 --- Electronic structure of β-FeSi2 --- p.7 / Chapter 2.3 --- Orientation relationship between β-FeSi2 and Si --- p.8 / Chapter CHAPTER 3: --- Instrumentation --- p.10 / Chapter 3.1 --- Metal vapor vacuum arc ion source implantation --- p.10 / Chapter 3.2 --- Rutherford backscattering --- p.12 / Chapter 3.3 --- Transmission Electron Microscopy (TEM) --- p.13 / Chapter 3.3.1 --- Principles of TEM --- p.13 / Chapter 3.3.2 --- Electron specimen interaction and contrast --- p.14 / Chapter 3.3.3 --- Electron Diffraction --- p.15 / Chapter 3.3.4 --- Sample Preparation --- p.17 / Chapter 3.3.4.1 --- Plan-view sample --- p.17 / Chapter 3.3.4.2 --- Cross-section sample --- p.17 / Chapter CHAPTER 4: --- FeSi2 films fabricated by ion implantation --- p.18 / Chapter 4.1 --- Introduction --- p.18 / Chapter 4.2 --- Experimental details --- p.18 / Chapter 4.3 --- Ion energy series --- p.19 / Chapter 4.3.1 --- As-implanted sample --- p.19 / Chapter 4.3.1.1 --- Results --- p.20 / Chapter 4.3.1.2 --- Discussions --- p.20 / Chapter 4.3.2 --- Annealed samples --- p.24 / Chapter 4.3.2.1 --- Morphology of the annealed samples and the damage on Si substrate --- p.24 / Chapter 4.3.2.2 --- Identification of the FeSi2 phase and their orientation relationship with the Si matrix --- p.24 / Chapter 4.3.2.3 --- Photoluminescence of the samples --- p.26 / Chapter 4.3.2.4 --- Discussions --- p.26 / Chapter 4.4 --- Ion dosage series --- p.31 / Chapter 4.4.1 --- Results --- p.31 / Chapter 4.4.2 --- Discussions --- p.32 / Chapter 4.5 --- Summary --- p.36 / Chapter CHAPTER 5: --- Effect of post annealing on the phase and microstructure of FeSi2 --- p.37 / Chapter 5.1 --- Introduction --- p.37 / Chapter 5.2 --- Experimental details --- p.37 / Chapter 5.3 --- The correlation between microstructure of FeSi2 synthesized under different annealing conditions and their PL --- p.38 / Chapter 5.3.1 --- RTA series --- p.38 / Chapter 5.3.1.1 --- Results --- p.38 / Chapter 5.3.1.2 --- Discussions --- p.39 / Chapter 5.3.2 --- FA series --- p.42 / Chapter 5.3.2.1 --- Results --- p.42 / Chapter 5.3.2.2 --- Discussions --- p.44 / Chapter 5.3.3 --- RTAFA series --- p.45 / Chapter 5.3.3.1 --- Results --- p.45 / Chapter 5.3.3.2 --- Discussions --- p.45 / Chapter 5.4 --- The existence of alpha phase and its special shape --- p.51 / Chapter 5.4.1 --- Results --- p.51 / Chapter 5.4.2 --- Discussions --- p.52 / Chapter 5.5 --- The existence of gamma phase in 1050°C furnace annealed sample / Chapter 5.5.1 --- Results --- p.56 / Chapter 5.5.2 --- Discussions --- p.57 / Chapter 5.6 --- Summary --- p.59 / Chapter CHAPTER 6: --- Conclusions --- p.61 / References --- p.63
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A process for hydrogenation of silicon carbide crystalsRao, Yeswanth Lakshman. January 2001 (has links)
Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.
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Second harmonic spectroscopy of silicon nanocrystalsFigliozzi, Peter Christopher, 1972- 28 August 2008 (has links)
Using a novel two-beam technique developed to greatly enhance quadrupolar contributions to the second-order nonlinear polarization, we performed a nonlinear spectroscopic study of silicon nanocrystals implanted in an SiO₂ matrix.
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A universal species ion implantation model for implants into topographically complex structures with multiple materialsChen, Yang, 1973- 07 March 2011 (has links)
Not available / text
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Some positron annihilation studies on highly doped and supersaturated N-type siliconHo, King-fung., 何競豐. January 2004 (has links)
published_or_final_version / abstract / toc / Physics / Doctoral / Doctor of Philosophy
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Second harmonic spectroscopy of silicon nanocrystalsFigliozzi, Peter Christopher, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
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Effect of dislocation density on residual stress in polycrystalline silicon wafersGarcia, Victoria. January 2008 (has links)
Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2008. / Committee Chair: Danyluk, Steven; Committee Member: Melkote, Shreyes; Committee Member: Rohatgi, Ajeet.
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An optical and magnetic resonance study of point defects in silicon, diamond, and aluminum nitride /Mason, Philip Wayne, January 1997 (has links)
Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Includes bibliographical references.
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