In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. It is found that a lower barrier height of dielectric matrix influences to the lateral electron transport of the SiQDs in such dielectric matrix. PL results confirm that the band gap of surface oxidized SiQDs widens due to quantum confinement. The present results reveal that the strong peak (Q-peak) due to quantum confinement is more effective in the emission with increasing SiQD concentration. The surface oxide is believed to play an important role in the reduction of SiQD luminescence due to a trapped exiciton. It is concluded that SiQDs surface oxide accompanied by a SiO2 matrix may not provide a good passivation in very small SiQD size. However the energy band gap and conductivity of the SiQDs are tunablity, in the optimum range of SiQD size and concentration. This observation may be important for future nanoelectronics applications.

In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. It is found that a lower barrier height of dielectric matrix influences to the lateral electron transport of the SiQDs in such dielectric matrix. PL results confirm that the band gap of surface oxidized SiQDs widens due to quantum confinement. The present results reveal that the strong peak (Q-peak) due to quantum confinement is more effective in the emission with increasing SiQD concentration. The surface oxide is believed to play an important role in the reduction of SiQD luminescence due to a trapped exiciton. It is concluded that SiQDs surface oxide accompanied by a SiO2 matrix may not provide a good passivation in very small SiQD size. However the energy band gap and conductivity of the SiQDs are tunablity, in the optimum range of SiQD size and concentration. This observation may be important for future nanoelectronics applications.