In recent years, Silicon Photonics has emerged as a promising technology for cost-effective fabrication of photonic components and integrated circuits, the application of which is recently expanding in technological fields beyond tele- and data-communications, such as sensing and biophotonics. Compact, energy-efficient laser sources with precise wavelength control are crucial for the aforementioned applications. However, practical, efficient, electrically-pumped lasers on Silicon or other group IV elements are still absent, owing to the indirect bandgap of those materials. Consequently, the integration of III-V compounds on Silicon currently appears to be the most viable route to the realization of such lasers. In this thesis, I present and explore the potential of an External Cavity (EC) hybrid III-V/Silicon laser design, comprising a III-V-based Reflective Semiconductor Optical Amplifier (RSOA) and a Silicon reflector chip, based on a two-dimensional Photonic Crystal (PhC) cavity vertically coupled to a low-refractive-index dielectric waveguide. The vertically coupled system functions as a wavelength-selective reflector, determining the lasing wavelength. Based on this architecture mW-level continuous-wave (CW) lasing at room temperature was shown both in a fiber-based long cavity scheme and die-based short cavity scheme, with SMSR of > 25 dB and > 40 dB, respectively. Furthermore, by electrically modulating the refractive index of the PhC cavity in the reflector chip, tuning of the emitted wavelength was achieved in the die-based short cavity EC laser configuration. In this way, I demonstrated the suitability of the examined EC configuration for direct frequency modulation. The proposed scheme eliminates the need for wavelength matching between the laser source and a resonant modulator, and reveals the potential of employing low-power-consumption resonant modulation in practical Silicon Photonics applications.

Orientador: Jacobus Willibrordus Swart / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-12T22:45:26Z (GMT). No. of bitstreams: 1 Dias_GuilhermeOsvaldo_D.pdf: 3822925 bytes, checksum: 25e0dd51fed5d5d3cb7dc334a0a61bb7 (MD5) Previous issue date: 2009 / Resumo: Analisamos amostras de óxido de silício rico em silício (SRSO) obtidas por um sistema de deposição química de vapor com ressonância ciclotrônica de elétrons (ECR-CVD). Propriedades estruturais, de composição, ópticas e elétricas foram estudadas por transformada de Fourier de absorção no infravermelho (FTIR), microscopia eletrônica de transmissão (TEM), espectroscopia de retro-espalhamento Rutherford (RBS), fotoluminescência (PL), elipsometria e medidas de capacitância-tensão (C-V). Através do ajuste dos índices de refração em função do fluxo de O2 para uma longa faixa de razões de fluxo, pudemos notar que o sistema ECR-CVD permite obter filmes com alto controle desses índices de refração. Isto sugere indiretamente a possibilidade do controle das características ópticas e elétricas dos nossos filmes, pois essas características, assim como o índice de refração, são dependentes da concentração de silício nos filmes. Na região de concentração de interesse em nosso trabalho, a razão de concentração atômica O/Si obtida por RBS correlaciona-se linearmente com o índice de refração. As intensidades e posições dos picos de PL e as curvas de histereses observadas através de medidas C-V, após os tratamentos térmicos, dependem das razões de fluxo O2/SiH4 utilizadas na deposição. Observamos que temperatura e tempo de tratamento térmico têm forte influência nas propriedades de PL das amostras selecionadas. No entanto, a influência destes parâmetros sobre as propriedades elétricas (C-V) não é tão significativa, principalmente para temperaturas de tratamentos acima de 1000 ºC. As propriedades de PL e C-V puderam ser relacionadas com a presença de nanoestruturas de silício imersas nos filmes SRSO, sendo que defeitos do tipo NBOHC e ODC, típicos do óxido de Si, também têm influência sobre essas propriedades. Comparando os dados de PL e FTIR de nossas amostras, bem como dados da literatura, concluímos que a cristalinidade das nanoestruturas de Si tem forte influência sobre a intensidade de PL. Por outro lado, a cristalinidade influencia muito pouco na capacidade de armazenamento de carga, como verificado pelas curvas de histerese nas medidas C-V. Assim, as características ópticas e elétricas de nossas amostras estão associadas principalmente à presença de nanoestruturas de silício dentro da matriz de óxido de Si. Nossas amostras demonstram alta potencialidade para aplicação em dispositivos optoeletrônicos e nanoeletrônicos. / Abstract: In this work we have analyzed samples of Silicon Rich Silicon Oxide (SRSO) obtained by an Electron Cyclotron Resonance Chemical Vapor Deposition system (ECR-CVD). Structural, compositional, electrical and optical properties were investigated by Fourier transform infrared (FTIR), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), capacitance-voltage (C-V), photoluminescence (PL) and ellipsometry. By fitting a long range refractive indices curve as a function of O2 flow, it can be seem that the ECR-CVD system is able to produce films with high control on the refractive indices, which, indirectly, suggest the possibility of control of the optical and electrical characteristics, since all these characteristics are dependent of Si concentration in the film, as refractive index. Into the region of interest for our work, the atomic concentration ratio O/Si obtained by RBS correlates linearly with the refractive indeces. The PL intensities and peak positions and the hysteresis curves observed by C-V characterizations, after thermal treatments, show dependence on O2/SiH4 flow ratios used in the work. We observed that temperature and time of thermal treatments have strong influence on PL properties of the selected samples. Nevertheless, the influence of these same parameters on electrical properties (C-V) are less significant than for PL properties, mainly for temperatures above 1000 oC. The PL and CV characteristics of our samples can be related to the presence of silicon nanostructures embedded inside SRSO films. On the other hand, typical silicon oxide defects, like NBOHC and ODC, have some influence on such optical and electrical properties. Comparing our PL and FTIR data, as well as data from literature, we can suppose that crystallinity has strong influence on PL intensity. On the other hand, crystallinity has just a weak influence on the charge storage capacity of our samples, as we had seen by the hysteresis curves in C-V measurements for samples treated at 1100 oC and 1150 oC. Finally, we conclude that optical and electrical characteristics of our samples are associated principally to the presence of silicon nanostructures embedded in a silicon oxide matrix. Our samples showed high potentiality to applications as optoelectronic and nanoelectronic devices. / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor Engenharia Elétrica

Indirekte Halbleiter, wie beispielsweise Silizium, zählen bei technischen Anwendungen zu den wichtigsten halbleitenden Materialien. Die indirekte Bandstruktur führt jedoch dazu, dass diese Materialien schlechte Lichtemitter sind. Die theoretische Beschreibung der optischen Eigenschaften dieser Materialien wurde in früheren Betrachtungen über phänomenologische Ansätze verfolgt. In dieser Arbeit wird eine mikroskopische Theorie, basierend auf den Heisenberg-Bewegungsgleichungen, entwickelt, um die Prozesse im Bereich der indirekten Energielücke zu beschreiben. Nach Herleitung der relevanten Gleichungen wird im ersten Anwendungskapitel die Absorption und optische Verstärkung im thermischen Gleichgewicht diskutiert. Bei der Diskussion wird insbesondere auf den Unterschied zu direkten Halbleitern eingegangen. Es zeigt sich, dass sich die optische Verstärkung in indirekten Halbleitern fundamental von denen in direkten unterscheidet. Im Gegensatz zum direkten Halbleiter kann die maximale optische Verstärkung eines indirekten Übergangs die maximale Absorption um Größenordnungen übertreffen. Im zweiten Anwendungsteil werden Nichtgleichgewichtsphänomene diskutiert. Durch starke optische Anregung kann eine hohe Elektronenkonzentration am Gamma-Punkt erzeugt werden. Da das globale Bandstrukturminimum aber am Rand der Brillouinzone liegt, verweilen die Elektronen nicht lange dort, sondern streuen in das Leitungsbandminimum. Dieser Prozess der sogenannten Intervalley-Streuung wird im Hinblick auf Gedächtniseffekte diskutiert. Nach dem Streuprozess der Elektronen besitzt das System eine Überschussenergie, die sich in einem Aufheizen der Ladungsträger zeigt. Das zweite Nichtgleichgewichtsphänomen ist das Abkühlen des Lochsystems, welches aufgrund der Trennung der Elektronen und Löcher in indirekten Halbleiter auch im Experiment getrennt untersucht werden kann. Mithilfe eines Experiment-Theorie-Vergleichs wird ein schneller Elektron-Loch-Streuprozess nachgewiesen, der dazu führt, dass in indirekten Halbleitern das Thermalisieren und Equilibrieren der Elektronen und Löcher auf der gleichen Zeitskala stattfindet.