Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007. / Committee Chair: Ayazi, Farrokh; Committee Member: Allen, Mark; Committee Member: Brand, Oliver; Committee Member: Degertekin, Levent; Committee Member: Papapolymerou, John. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (Ph. D.)--University of Texas at Austin, 1998. / Vita. Includes bibliographical references (leaves 192-198). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisors: Sanjay K. Banerjee and Gyeong S. Hwang. Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

For the sake of clarity, the results of this investigation are presented in two parts; first we discuss the lithium donor in silicon, and later the lithium-oxygen interaction in silicon. We present here a discussion of information which is common to both aspects of the problem. The data is presented in the form of absorption spectra in which the absorption coefficients are due only to the absorption centers introduced into the silicon samples during the diffusion process. The instrumental band width ( full width at half maximum) is indicated in each case for the energy regions in which the principal absorption resonances occur. / Ph. D.

published_or_final_version / Physics / Master / Master of Philosophy

Microdefects in wafers sliced from selected positions along Czochralski (CZ)-grown, silicon single crystal ingots were investigated by means of transmission electron microscopy (TEM). Specimens taken from the central regions of these wafers, previously subjected to specific thermal treatments, were prepared either by ultrasonic cutting and jet thinning or by an anisotropic thinning method. Ultrasonic cutting was found to generate microdefects in the thin surface regions of the TEM specimen discs. The density of ultrasonically generated defects (USD's) was found to vary directly with the ultrasonic energy input from the cutter. Ultrasonic waves transmitted through abrasive slurry into the discs, causing lattice vibrations, are believed to be responsible for the microdefect generation. Anisotropic thinning for the preparation of TEM specimens was carried out in an agitated bath of KOH-Isopropyl Alcohol (IPA)-H₂O at 80°C and 60°C. A great number of high-surface-quality, self-supporting thin films can be produced with large (about 30 mils square) electron-transparent areas. Edges of the thin films are in <110> directions and can be used as quick reference for defect orientation during electron microscopy. Specimens from heat-treated wafers disclosed the presence of precipitates measuring some 100-1500 nm on one side, surrounded by prismatic dislocations punched out in <110> directions in the crystal. The precipitates appear to be thin platelets (less than 40 Å in thickness), lying on {100} planes and are viewed either as flat squares or rectangles, or as edge-on rods inclined 45° to the <110> directions. The edges of the platelets are in <110> directions. Prismatic punched-out dislocation loops are formed in rows, the axes of which are in <110> directions. A row of loops seen edge-on is similar in size if its axis is in the surface <110> directions. When loop axes are in the oblique <110> directions from the surface, they appear as closed rhombus loops with line senses in <112> directions. Their size increases with distance from the precipitate. The observed dislocation loops were found to be of interstitial type with a Burger's vector of a/2 <110>. The total defect density (precipitates and dislocation loops) of a specimen depend strongly on the thermal history of the wafer and on the wafer position in the ingot.

High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.

Chow Chi Fai. / Thesis submitted in: August 2005. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract / Abstract (Chinese) / A cknowledgements / Table of Contents / List of Figures / List of Tables / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- The need for light emission from silicon --- p.1-1 / Chapter 1.2 --- Silicon-based light emitting material 1 - --- p.2 / Chapter 1.3 --- Literature overview --- p.1-4 / Chapter 1.4 --- Project goal --- p.1-10 / Reference --- p.1-11 / Chapter Chapter 2 --- Experimental details / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Sample preparation techniques --- p.2-1 / Chapter 2.2.1 --- MEVVA ion implantation --- p.2-1 / Chapter 2.2.2 --- PL samples preparation conditions --- p.2-3 / Chapter 2.2.3 --- EL samples preparation conditions --- p.2-4 / Chapter 2.3 --- Characterization techniques --- p.2-7 / Chapter 2.3.1 --- Photoluminescence spectroscopy (PL) --- p.2-7 / Chapter 2.3.2 --- Electroluminescence spectroscopy (EL) --- p.2-9 / Chapter 2.3.3 --- Rutherford backscattering spectroscopy (RBS) --- p.2-10 / Chapter 2.3.4 --- X-ray diffraction (XRD) --- p.2-12 / Chapter 2.3.5 --- Transmission electron microscopy (TEM) --- p.2-13 / Reference --- p.2-15 / Chapter Chapter 3 --- Resutls and Discussions / Chapter 3.1 --- RBS results --- p.3-1 / Chapter 3.2 --- XRD results --- p.3-8 / Chapter 3.3 --- TEM results --- p.3-12 / Chapter 3.3.1 --- Effects of the implantation energy on the microstructure of samples --- p.3-13 / Chapter 3.3.2 --- Effects of the implantation dose on the microstructure of samples --- p.3-16 / Chapter 3.4 --- Photoluminescence results --- p.3-19 / Chapter 3.4.1 --- Effect of implantation energy on the PL --- p.3-19 / Chapter 3.4.2 --- Effect of FA temperature on the PL --- p.3-24 / Chapter 3.4.3 --- Effect of FA duration on the PL --- p.3-26 / Chapter 3.4.4 --- Effect ofRTA duration on the PL --- p.3-28 / Chapter 3.4.5 --- Effect ofRTA temperature on the PL --- p.3-30 / Chapter 3.4.6 --- Effect of implantation dose on the PL --- p.3-32 / Chapter 3.4.7 --- Si band edge enhancement --- p.3-34 / Chapter 3.4.8 --- Photoluminescence spectra as a function of excitation power density --- p.3-37 / Chapter 3.4.9 --- Photoluminescence spectra as a function of measurement temperature --- p.3-45 / Chapter 3.5 --- Electroluminescence results --- p.3-52 / Chapter 3.5.1 --- EL quantum efficiency --- p.3-60 / Reference --- p.3-61 / Chapter Chapter 4 --- Conclusion and future works / Chapter 4.1 --- Conclusion --- p.4-1 / Chapter 4.2 --- Future works --- p.4-2 / Appendix I / Appendix II

by Chan Kwok Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 93-95). / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / LIST OF SYMBOLS --- p.iii / LIST OF FIGURES --- p.v / LIST OF TABLES --- p.vi / Chapter CHAPTER ONE --- INTRODUCTION --- p.1 / Chapter CHAPTER TWO --- SURVEYS ON ION IMPLANTATION DAMAGE STUDY --- p.6 / Chapter 2.1 --- Introduction --- p.6 / Chapter 2.1.1 --- Basic Theory --- p.7 / Chapter 2.1.2 --- Amorphization --- p.9 / Chapter 2.1.3 --- Amorphous Layer Regrowth --- p.10 / Chapter 2.1.4 --- Point Defect Sources --- p.11 / Chapter 2.1.5 --- Types of Extended Defects --- p.11 / Chapter 2.2 --- Nature of Point Defects --- p.15 / Chapter 2.2.1 --- Important Parameters --- p.15 / Chapter 2.2.2 --- Vacancy Centers in Semiconductor --- p.16 / Chapter 2.2.3 --- Self-interstitial in Silicon --- p.17 / Chapter 2.2.4 --- Distribution of Excess Point Defects --- p.18 / Chapter 2.2.5 --- Energy Level of Defect Species --- p.19 / Chapter CHAPTER THREE --- EXPERIMENTAL METHOD --- p.21 / Chapter 3.1 --- Experimental --- p.21 / Chapter 3.2 --- Spreading Resistance Profiling --- p.25 / Chapter CHAPTER FOUR --- MODELING OF SPREADING RESISTANCE PROFILES OF ION-IMPLANTED DAMAGE IN SILICON --- p.29 / Chapter 4.1 --- Introduction --- p.29 / Chapter 4.2 --- Basic equation --- p.30 / Chapter 4.3 --- Formation of Model --- p.34 / Chapter CHAPTER FIVE --- RESULTS AND DISCUSSION --- p.37 / Chapter 5.1 --- Results --- p.37 / Chapter 5.2 --- Discussion --- p.55 / Chapter CHAPTER SIX --- CONCLUSION AND SUGGESTIONS OF FURTHER WORK --- p.58 / Chapter 6.1 --- Conclusion --- p.58 / Chapter 6.2 --- Suggestions of further work --- p.59 / APPENDIX A --- p.60 / APPENDIX B / SPREADING RESISTIVITY PROFILES --- p.62 / REFERENCE --- p.93