An IGBT/diode model with more accurate characteristics than simple switchis required to serve for EMC issues from converter valve. The purpose of thismaster thesis is to develop an IGBT and diode model to achieve both accuratetransient behavior and fast simulation time during single pulse switchingtest circuit for the 4:5 kV and 2:0 kA StakPakTM IGBT module. A gate unitwhich resembles the ABB gate unit is implemented to obtain a good agreementbetween simulation and measurement. For demonstration and verication, theIGBT/diode model is applied in a simplied arm simulation of full scale ABBGeneration 4 HVDC-VSC converter station and capable of a half cell consistingof 8 series-connected IGBTs and their anti-paralleled diodes. The arm simulationresults are analyzed further for converter station EMC studies.Convergence issue is the most important problem in the whole process of modelimplementation and application. To guarantee the convergence in simulationsome characteristics such as the tail voltage at the end of turn-o is disregarded.But overall, the model is validated and adopted successfully. / En IGBT-/diodmodell med mer exakta egenskaper an en enkel switch kravs foratt hantera EMC-problem fran omvandlarventilen. Syftet med denna magisteruppsatsar att utveckla en IGBT- och diodmodell for att uppna bade noggrantovergaende beteende och snabb simuleringstid under enkelpulsomkopplingstestkretsfor 4,5 kV och 2,0 kA-StakPak IGBT-modulen. En grindenhetsom liknar ABB-grindenheten implementeras for att fa god overensstammelsemellan simulering och matning. For demonstration och veriering, tillampasIGBT-/diodmodellen i en forenklad armsimulering av en fullskalig ABB Generation4 HVDC-VSC-omvandlarstation och med kapacitet for en halvcell bestaendeav 8 seriekopplade IGBT och deras anti-parallellkopplade dioder. Resultatenfran armsimuleringen analyseras vidare for EMC-studier av omvandlarstationen.Konvergensfragan ar det viktigaste problemet i hela processen for modellimplementeringoch -tillampning. For att garantera konvergensen i simulering ignorerasvissa egenskaper sasom svansspanningen vid slutet av avstangning. Mentotalt sett, valideras och antas modellen framgangsrikt.

The purpose of this master thesis was to create a model of an IGBT in a single pulse test circuit and connect this model to a model of a Gate Unit. The IGBT model and the single pulse test circuit were both implemented in MATLAB and the Gate Unit was implemented in Simulink. The purpose of this model was to test the actions of the gate unit, so that the initial tuning could be done before going to the lab. Since no tests were performed in the lab, it was not possible to see how much of the testing that could have been done by simulations. However, the actions of the IGBT model much resembled the actions of the real component, even though some drawbacks were clear, such as the lack of tail current and tail voltage. These comparisons could be made between simulated characteristics and recordings from a previous test with the same component.