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Simulation of an SP8T 18 GHz RF Switch Using SMT PIN DiodesVigano, Andre De Souza 01 December 2020 (has links) (PDF)
Radio frequency (RF) and microwave switches are widely used in several different applications including radar, measurement systems, telecommunications, and other areas. An RF switch can control a radar’s transmit vs. receive mode, select the operating band, or direct an RF signal to different paths. In this study, a single pole eight throw (SP8T) switch using only Surface Mount (SMT) components is designed and simulated in Keysight’s Advanced Design System (ADS). Single pole eight throw is defined as one input and eight possible outputs. A star network configuration with series-shunt PIN diode switches is used to create the 8-way RF switch. There are other commercially available SP8T switches from MACOM, Skyworks, Analog Devices, and other vendors that operate around this bandwidth. However, this design uses SMT components and series-shunt diode configurations to create a device in the GHz range and power handling in the high 20 to 30 dBm range. This study modeled components in ADS, including the PIN diodes and the bias tees. The project also analyzed multiple layouts, finalizing the optimal design to meet specifications. The insertion loss, bandwidth, isolation, return loss, power handling, and switching speed are analyzed in the final design. Key specifications for this design are determined by comparing to other commercially available SP4T and SP8T switches from MACOM, Skyworks, Analog Devices, and other vendors, as well as developing an operational switch over the 2-18 GHz bandwidth. Additional specifications include limiting insertion loss to 2.0 dB maximum and maximizing isolation to 30 dB minimum. Switching speed and power handling specifications are also set to 20 ns and 23 dBm, respectively. Future projects will work on design fabrication and improvements to the manufactured switch.
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