The (1-x)SrBi2Ta2O9-xBi3TaTiO9 thin films fabricated by modified metalorganic solution deposition technique showed much improved properties compared to SrBi2Ta2O9: a leading candidate material for memory applications. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 600 oC and grain size was found to be considerably increased for the (1-x)SrBi2Ta2O9-xBi3TaTiO9 compositions. The film properties were found to be strongly dependent on the composition and annealing temperatures. The measured dielectric constant of the thin films was in the range 180-225 for films with 10-50 mol % of Bi3TaTiO9 content in the solid solution. Ferroelectric properties of (1-x)SrBi2Ta2O9-xBi3TaTiO9 thin films were significantly improved compared to SrBi2Ta2O9. For example, the observed 2Pr and Ec values for films with 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 composition, annealed at 650 oC, were 12.4 micro C/cm2 and 80 kV/cm, respectively. The solid solution thin films showed less than 5 % decay of the polarization charge after 10^10 switching cycles and good memory retention characteristics after about 10^6 s of memory retention. The size and temperature effect of 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 thin films were studied by determining how the ferroelectric properties vary with film thickness and temperature. It was found that the ferroelectric properties were determined by the grain size, and not by the thickness of the film in our studied thickness range of 80-350 nm. A 80 nm thick film showed good ferroelectric properties similar to the 350 nm thick film. Thermal stability of the 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 thin film was found to be much better compared to the SrBi2Ta2O9 and Pb(Zr,Ti)O9 thin films due to its higher Curie temperature and lower Schottky activation energy according to temperature changes. Also, 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 thin films has shown good ferroelectric properties on multilayer system such as PtRh/PtRhOx/poly-Si suggest their suitability for high density FRAM applications. / Ph. D.

This study was divided into two main parts as there were two kind of films studied. The method of deposition, pulsed laser ablation, was common to both SrBi₂Ta₂O₉ and TiO₂ films. The methods of investigations were also the same. There is an important race for the development of a practical ferroelectric memory. Among ferroelectrics that have attracted attention are the novel compounds with the Aurivillius layered structure. Ferroelectric films of SrBi₂Ta₂O₉, seem to have promising properties, low fatigue and good hysteresis. In this thesis, structure and crystal vibrations in the films were investigated with Raman scattering, infrared absorption, and x-ray diffraction. Similar studies were carried out on powders and crystals of these materials also. The results obtained prove that the films have the orthorhombic SrBi₂Ta₂O₉, structure, and the Raman and IR measurements (the first reported for SBT films) are demonstrated to provide valuable tools for optimizing the deposition process. TiO₂ is another important material in the domain of thin films. This work was undertaken to study its deposition with laser ablation. The TiO₂ films deposited are very unusual; we discovered that they contain the rare brookite phase. This is the first time that brookite has been obtained in laser-ablation-deposited films. This opens up a new area in thin film development with new potential applications. The absorption edge of brookite was measured, using natural crystals. The optical bandgap was found to be lower than the bandgaps of the rutile and anatase forms of TiO₂, in contradiction of a recent theoretical calculation. / Master of Science

O processamento em alta pressão é um método alternativo para a produção de materiais cerâmicos. Neste trabalho, pressões na ordem de 7,7 GPa e 2,5 GPa foram aplicadas em amostras, em diferentes temperaturas, que foram colocadas em uma célula de reação específica, gerando diferentes efeitos na formação de fases. A composição de fases foi analisada por difração de raios X e a evolução microestrutural, associada ao processamento em alta pressão, foi investigada por microscopia eletrônica por varredura em associação com a espectroscopia por dispersão de energia. Um analisador de resposta de frequência foi utilizado para obter as curvas ferroelétricas por espectroscopia de impedância eletroquímica. A utilização de alta pressão (2,5 GPa) possibilitou a obtenção de amostras de SrBi2Ta2O9 monofásicas com elevada densidade relativa, acima de 93%, após sinterização a uma temperatura de 900 °C. Essa temperatura é inferior às usualmente necessárias para obter alta densificação utilizando métodos convencionais de sinterização. Além disso, as amostras processadas em alta pressão apresentaram uma resposta dielétrica similar às amostras de SrBi2Ta2O9 sinterizadas por processos convencionais em temperaturas acima de 1000 ºC. / High-pressure processing is a very attractive approach for the production of ceramic materials. In this work, pressures about 7.7 GPa and 2.5 GPa were applied in SrBi2Ta2O9 samples at different temperatures placed in a specific reaction cell. X-ray diffraction was used to identify the different phases produced as a function of the processing conditions. The microstructural evolution, associated to the high-pressure processing, was investigated by scanning electron microscopy in association with energy dispersive spectroscopy. Frequency response analysis was used to obtain the ferroelectric curves by electrochemical impedance spectroscopy. A highly densified (> 93% of theoretical density) single-phase (SrBi2Ta2O9) sample was obtained after processing at 2.5 GPa and 900 ºC. This temperature is lower than those necessary to obtain high densification, when conventional sintering processes are employed. In addition, the samples produced by high pressure processing showed a dielectric response similar to SrBi2Ta2O9 samples sintered by conventional processes at temperatures above 1000 ºC.

O processamento em alta pressão é um método alternativo para a produção de materiais cerâmicos. Neste trabalho, pressões na ordem de 7,7 GPa e 2,5 GPa foram aplicadas em amostras, em diferentes temperaturas, que foram colocadas em uma célula de reação específica, gerando diferentes efeitos na formação de fases. A composição de fases foi analisada por difração de raios X e a evolução microestrutural, associada ao processamento em alta pressão, foi investigada por microscopia eletrônica por varredura em associação com a espectroscopia por dispersão de energia. Um analisador de resposta de frequência foi utilizado para obter as curvas ferroelétricas por espectroscopia de impedância eletroquímica. A utilização de alta pressão (2,5 GPa) possibilitou a obtenção de amostras de SrBi2Ta2O9 monofásicas com elevada densidade relativa, acima de 93%, após sinterização a uma temperatura de 900 °C. Essa temperatura é inferior às usualmente necessárias para obter alta densificação utilizando métodos convencionais de sinterização. Além disso, as amostras processadas em alta pressão apresentaram uma resposta dielétrica similar às amostras de SrBi2Ta2O9 sinterizadas por processos convencionais em temperaturas acima de 1000 ºC. / High-pressure processing is a very attractive approach for the production of ceramic materials. In this work, pressures about 7.7 GPa and 2.5 GPa were applied in SrBi2Ta2O9 samples at different temperatures placed in a specific reaction cell. X-ray diffraction was used to identify the different phases produced as a function of the processing conditions. The microstructural evolution, associated to the high-pressure processing, was investigated by scanning electron microscopy in association with energy dispersive spectroscopy. Frequency response analysis was used to obtain the ferroelectric curves by electrochemical impedance spectroscopy. A highly densified (> 93% of theoretical density) single-phase (SrBi2Ta2O9) sample was obtained after processing at 2.5 GPa and 900 ºC. This temperature is lower than those necessary to obtain high densification, when conventional sintering processes are employed. In addition, the samples produced by high pressure processing showed a dielectric response similar to SrBi2Ta2O9 samples sintered by conventional processes at temperatures above 1000 ºC.

O processamento em alta pressão é um método alternativo para a produção de materiais cerâmicos. Neste trabalho, pressões na ordem de 7,7 GPa e 2,5 GPa foram aplicadas em amostras, em diferentes temperaturas, que foram colocadas em uma célula de reação específica, gerando diferentes efeitos na formação de fases. A composição de fases foi analisada por difração de raios X e a evolução microestrutural, associada ao processamento em alta pressão, foi investigada por microscopia eletrônica por varredura em associação com a espectroscopia por dispersão de energia. Um analisador de resposta de frequência foi utilizado para obter as curvas ferroelétricas por espectroscopia de impedância eletroquímica. A utilização de alta pressão (2,5 GPa) possibilitou a obtenção de amostras de SrBi2Ta2O9 monofásicas com elevada densidade relativa, acima de 93%, após sinterização a uma temperatura de 900 °C. Essa temperatura é inferior às usualmente necessárias para obter alta densificação utilizando métodos convencionais de sinterização. Além disso, as amostras processadas em alta pressão apresentaram uma resposta dielétrica similar às amostras de SrBi2Ta2O9 sinterizadas por processos convencionais em temperaturas acima de 1000 ºC. / High-pressure processing is a very attractive approach for the production of ceramic materials. In this work, pressures about 7.7 GPa and 2.5 GPa were applied in SrBi2Ta2O9 samples at different temperatures placed in a specific reaction cell. X-ray diffraction was used to identify the different phases produced as a function of the processing conditions. The microstructural evolution, associated to the high-pressure processing, was investigated by scanning electron microscopy in association with energy dispersive spectroscopy. Frequency response analysis was used to obtain the ferroelectric curves by electrochemical impedance spectroscopy. A highly densified (> 93% of theoretical density) single-phase (SrBi2Ta2O9) sample was obtained after processing at 2.5 GPa and 900 ºC. This temperature is lower than those necessary to obtain high densification, when conventional sintering processes are employed. In addition, the samples produced by high pressure processing showed a dielectric response similar to SrBi2Ta2O9 samples sintered by conventional processes at temperatures above 1000 ºC.