Since 1982, the Si (111)-(7x7) surface has been extensively studied both theoretically and experimentally with the modern powerful tools of STM and Scanning Tunneling Spectroscopy (STS). In this work, a simple atomic orbital model for the Si (111)-(7x7) surface is developed to simulate the experimental results of STM and STS. Based on Tersoff-Hamann’s theory for the tunneling current, simulations of clean Si (111)-(7x7) constant-current images are presented. The direct, real-space simulated topographic images of the surface are compared to experimental results qualitatively and quantitatively. The simulation of spectroscopic imaging and normalized conductance spectra are also included. The adsorption of atomic hydrogen atoms onto the Si (111)-(7x7) surface is also simulated. / xiv, 146 leaves ; 29 cm.

Dissociation of trichloroethylene (TCE) molecules on the Si(111)-7x7 and the Si(100)-2x1 surfaces was studied using STM. Though molecular adsorption may also be observed on the Si(111)-7x7 surface, dissociation is the dominant process. From the STM images acquired, products of dissociation were identified, namely chlorine atoms and dichlorovinyl groups. Dissociation of chlorine from the TCE molecule was confirmed by studying not just appearance in STM images but also from studies of tip-induced diffusion. Different binding configurations were proposed for the vinyl group on the Si (111)-7x7 and the Si(100)-2x1 surfaces. Site preference for each product of dissociation is reported on the Si(111)-7x7 surface. Dissociation of molecules such as ammonia, dimethylamine and methyl chloride on the Si(111)-7x7 and Si(100)-2x1 surfaces is reviewed. The field emission process is explained in detail. The usefulness of making field emission measurements is in evaluating the sharpness of STM tips. / xviii, 175 leaves : ill. (some col.) ; 29 cm