Thesis (Ph. D.)--University of Hong Kong, 1992.

Thesis (M.S.) University of Missouri-Columbia, 2005. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (July 10, 2006) Includes bibliographical references.

No description available.

The optical ring cavity has been studied for about ten years, both theoretically and experimentally. In these studies the uniform plane wave approximation has been used. In this work we investigate effects which result from the retention of the transverse diffraction. We establish that transverse structure is inevitable since plane wave fixed points are susceptible to transverse instabilities (modulational instability). We show that this instability is a universal mechanism for initiating various interesting and complicated, yet understandable, dynamical responses in a one and a two transverse dimensional cavity.

This dissertation describes our recent results in the study of various types of photonic switches. Special attention is given to the devices with Fabry-Perot etalon or planar waveguide structures based on dispersive optical nonlinearities. Basic optical logic functions, such as digital pattern recognition, symbolic substitution, and all-optical compare-and-exchange operation are demonstrated using ZnS and ZnSe nonlinear interference filters. Differential gain, cascading, and optical latching circuits are demonstrated using GaAs/AlGaAs multiple-quantum-well nonlinear etalons that are compatible with diode-laser sources, and the relationship between differential gain and device response time is established through a thorough investigation of the switching dynamics. Preliminary results also indicate that optical fibers can be used as interconnects between optical logic gates. Picosecond all-optical switching with good (> 3:1) contrast is demonstrated for the first time in single-mode strip-loaded GaAs/AlGaAs nonlinear directional couplers (NLDC's). The anisotropy of quantum-well structure to light polarization is used to achieve polarization-dependent two-beam switching, and the optical Stark effect is used to demonstrate all-optical modulation in an NLDC with subpicosecond recovery time.

by Han Dejun. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves [117]-[129]). / Abstract --- p.ii / Acknowledgment --- p.iv / Table of Contents --- p.v / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- The Current Situation of Space-division Optical Switches --- p.1-1 / Chapter 1.1.1 --- Digital Optical switches (DOS) --- p.1-2 / Chapter 1.1.2 --- Twin-guide amplifier (TGA) --- p.1-3 / Chapter 1.1.3 --- Direction coupler with amplifiers --- p.1-4 / Chapter 1.1.4 --- Total internal reflection type switch with amplifier --- p.1-5 / Chapter 1.1.5 --- Semiconductor optical amplifier gate switches --- p.1-6 / Chapter 1.2 --- Existing Problems --- p.1-9 / Chapter 1.3 --- New Proposals --- p.1-10 / Chapter 1.3.1 --- New features --- p.1-11 / Chapter 1.3.2 --- New technology for OEIC --- p.1-13 / Chapter 1.3.3 --- Expected improvement in performance --- p.1-14 / Chapter 1.4 --- Organization of thesis --- p.1-17 / Chapter 2. --- Band Lineup And Optical Gain Calculation --- p.2-1 / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Band Lineup for InGaAsP MQW Structures --- p.2-3 / Chapter 2.2.1 --- Derivation According to Ishikawa et al.'s Scheme --- p.2-3 / Chapter 2.2.2 --- Derivation According to Krijn's scheme --- p.2-5 / Chapter 2.2.3 --- Improved band lineup calculation scheme --- p.2-7 / Chapter 2.3 --- Gain and Spontaneous Emission Rate Expressions --- p.2-13 / Chapter 2.3.1 --- Optical gain expressions --- p.2-13 / Chapter 2.3.2 --- Spontaneous Emission Rate Expressions --- p.2-16 / Chapter 2.3.3 --- Polarization characteristics --- p.2-17 / Chapter 2.4 --- Optical Absorption and Its Polarization Sensitivity --- p.2-18 / Chapter 2.4.1 --- Absorption in an intermixed QW Structure --- p.2-18 / Chapter 2.4.2 --- Electro-optical Absorption --- p.2-19 / Chapter 3. --- Design of the Optical Switches --- p.3-1 / Chapter 3.1 --- Design of Material Layer Structure --- p.3-2 / Chapter 3.2 --- Design of Device Geometrical Structure --- p.3-7 / Chapter 3.3 --- Optical Gain in Polarization Insensitive Gain Medium-- An Example --- p.3-8 / Chapter 3.4 --- Optical Absorption in Polarization Insensitive Gain Medium-- An Example --- p.3-15 / Chapter 4. --- Fabrication Technology --- p.4-1 / Chapter 4.1 --- Passive Waveguide Formation --- p.4-2 / Chapter 4.1.1 --- Impurity-free vacancies diffusion technology --- p.4-3 / Chapter 4.1.2 --- High energy ion implantation enhanced intermixing technology --- p.4-4 / Chapter 4.1.3 --- Elevated temperature O+ HE-IIEI of MQWs --- p.4-6 / Chapter 4.2 --- Oxygen Implant Isolation --- p.4-6 / Chapter 4.3 --- Self Aligned Ridged Waveguide Technology --- p.4-7 / Chapter 4.4 --- Reduction of Effective Facet Reflectivity --- p.4-11 / Chapter 4.5 --- Fabrication Process Flow --- p.4-12 / Chapter 4.5.1 --- Layer structure of the material --- p.4-12 / Chapter 4.5.2 --- Fabrication process flow for the Y-junction optical switches --- p.4-14 / Chapter 4.6 --- Schematic Structure of the Fabricated Switches --- p.4-19 / Chapter 5. --- Experimental Results --- p.5-1 / Chapter 5.1 --- High Energy Ion Implantation Enhanced Intermixing of Quantum Wells --- p.5-2 / Chapter 5.1.1 --- High energy ion implantation --- p.5-2 / Chapter 5.1.2 --- Rapid thermal annealing --- p.5-4 / Chapter 5.2 --- Photoluminescence --- p.5-6 / Chapter 5.3 --- Electroluminescence --- p.5-9 / Chapter 5.4 --- Current-Voltage characteristics --- p.5-12 / Chapter 5.5 --- Guided-Wave Optoelectronic Measurement --- p.5-14 / Chapter 5.5.1 --- Setup of the measurement --- p.5-14 / Chapter 5.5.2 --- Measurement of absorption loss for the blue-shifted QW structure --- p.5-16 / Chapter 5.5.3 --- Optical losses measurement by Fabry-Perot interference method --- p.5-18 / Chapter 5.5.4 --- Electroabsorption peak shift in IIEI wafer --- p.5-21 / Chapter 5.6 --- Oxygen Implant Isolation --- p.5-21 / Chapter 5.7 --- Characteristics of Optical Switches --- p.5-23 / Chapter 5.7.1 --- Current-voltage characteristics --- p.5-23 / Chapter 5.7.2 --- Optical mode and transmission characteristics --- p.5-24 / Chapter 5.7.3 --- Switch characteristics --- p.5-29 / Chapter 5.7.4 --- Discussion --- p.5-32 / Chapter 6. --- Conclusion and Future Studies --- p.6-1 / Chapter 6.1 --- Conclusion --- p.6-1 / Chapter 6.1.1 --- The major contributions to the Y-JOS --- p.6-1 / Chapter 6.1.2 --- The major contribution to the bandgap engineering for InGaAs(p)/InP heterostructure --- p.6-3 / Chapter 6.1.3 --- The major contributions to the HE-IIEI technology --- p.6-4 / Chapter 6.2 --- Topics for Future Studies --- p.6-5 / Chapter 6.2.1 --- Band lineup and optical gain calculation --- p.6-5 / Chapter 6.2.2 --- Optimization of HE-IIEI technology --- p.6-6 / Chapter 6.2.3 --- Optimization of the Fabrication of Y-JOS --- p.6-7 / Reference --- p.R1 / Appendix A Characteristics Of Strained Quantum Wells --- p.A1 / Appendix B Effective Index Change Induced by Quantum Well Intermixing --- p.A3 / Appendix C Abbreviation --- p.A13 / Appendix D List of Publications --- p.A14

Lai, Wai Chiu King. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 87-89). / Abstracts in English and Chinese. / LIST OF TABLES --- p.vi / LIST OF FIGURES --- p.vii / Chapter 1. --- Introduction --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Organization of the thesis --- p.3 / Chapter 2. --- Literature Survey --- p.5 / Chapter 2.1 --- Micro Hinges --- p.5 / Chapter 2.2 --- Assembly --- p.5 / Chapter 2.2.1 --- Manual Lift Up Process --- p.5 / Chapter 2.2.2 --- Assembly by On-substrate Actuators --- p.6 / Chapter 2.2.3 --- Assembly by Surface Tension Force --- p.8 / Chapter 2.2.4 --- Assembly by Thermal Shrinkage --- p.8 / Chapter 2.2.5 --- Assembly by Ultrasonic Triboelectricity --- p.9 / Chapter 2.3 --- Summary of Literature Survey --- p.9 / Chapter 3. --- Design & Analysis --- p.11 / Chapter 3.1 --- Micro-Assembly by Centrifugal Force --- p.11 / Chapter 3.2 --- Micro Mass Platform --- p.12 / Chapter 3.2.1 --- Micro Mirror --- p.12 / Chapter 3.2.2 --- Rotation Sensor --- p.15 / Chapter 3.3 --- Fabrication of Micro Structures --- p.16 / Chapter 3.4 --- Force Analysis --- p.18 / Chapter 3.4.1 --- Centrifugal Force --- p.18 / Chapter 3.4.2 --- Van der Waals Forces --- p.20 / Chapter 3.4.3 --- Capillary Force - (1st model) --- p.22 / Chapter 3.4.4 --- Capillary Force - (2nd model) --- p.23 / Chapter 3.4.5 --- Casimir Force --- p.26 / Chapter 3.4.6 --- Spring force of the beam --- p.27 / Chapter 3.4.7 --- Comparison of Forces --- p.28 / Chapter 3.4.8 --- Stress on Polysilicon --- p.30 / Chapter 4. --- Surface Force Measurement --- p.32 / Chapter 4.1 --- Experimental Setup --- p.33 / Chapter 4.2 --- Experimental Result --- p.34 / Chapter 4.2.1 --- Control Experiment of Rotation Sensor --- p.34 / Chapter 4.2.2 --- Freed-state and Snap-down-state --- p.35 / Chapter 4.2.3 --- Summary of the Experimental Data --- p.36 / Chapter 4.3 --- Comparison between Modelled Results and Experimental Data --- p.42 / Chapter 5. --- Assembly Experiment --- p.45 / Chapter 5.1 --- Experimental Setup --- p.45 / Chapter 5.2 --- Experimental Results --- p.46 / Chapter 5.3 --- Comparison among different chips --- p.52 / Chapter 6. --- Assembly Experiment (Double Chips) --- p.57 / Chapter 6.1 --- Experimental Setup --- p.57 / Chapter 6.2 --- Experimental Results --- p.58 / Chapter 6.2.1 --- Surface Profile measurement --- p.58 / Chapter 6.2.2 --- Summary of the surface profile measurement --- p.68 / Chapter 6.2.3 --- Assembly Results --- p.69 / Chapter 7. --- Assembly Experiment (Monitoring System in MUMPs46) --- p.72 / Chapter 7.1 --- Experimental Setup --- p.72 / Chapter 7.2 --- Experimental Results --- p.74 / Chapter 8. --- Other tested micro structures --- p.80 / Chapter 9. --- Conclusion --- p.82 / Chapter 10. --- Future Work --- p.83 / Chapter A. --- Appendix --- p.84 / Bibliography --- p.87

Graduation date: 2000

[by] David A. Huffman. / "March 14, 1955." / Bibliography: p. 28. / Army Signal Corps Contract No. WA36-039 sc-42607. Dept. of the Army Project No. 3-99-12-022.

by D.A. Huffman. / "January 10, 1954." "Reprinted from Journal of the Franklin Institute, vol. 257, no.3, March, 1954." / Includes bibliographical references. / Army Signal Corps Contract No. DA36-039 sc-100, Project 8-102B-0. Dept. of the Army Project No. 3-99-10-022.