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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

The study and fabrication of top emission organic light-emitting diodes

Lin, Shin-Ju 27 June 2005 (has links)
The top emission organic light-emitting diodes (TEOLEDs) with multilayer electrodes were studied. Firstly a high reflectivity metal, Al, followed by a high work function metal, such as Pt, Ni or Au, was used as bilyaer anode. It was found that the Al/Au bilayer anode can give rise to a very good luminescent performance if the Al thickness in the bilayer was adjusted to 70 nm. The Al/Au bilayer anode has high reflectivity and good adhesive contact with the hole injection layer. Next the cathode in TEOLEDs composed of multiple layers, LiF/Al/Ag, were studied. The optimum thicknesses in each layer as 0.4/4/15 nm were used to achieve high transparency and good conductivity. The effects of thicknesses of each organic layer were also studied. When the optimum thicknesses of m-MTDATA/NPB/Alq3 were adjusted to 20/40/60 nm, the highest brightness and best luminance efficiency of 8041 cd/m2 and 3 cd/A, respectively, were obtained. The white TEOLED was also studied in this thesis. The ADS082BE was blue host-emitting material and DCJT was orange guest-emitting material. The doped concentration and location were adjusted to control the blue to orange luminance intensity ratio. A white emission with CIE coordinate (0.30, 0.34) was obtained. The highest luminance of 3739 cd/m2 @13.5 Vand best luminance efficiency of 3 cd/A@10V were obtained in the white TEOLED which used multilayer anode and cathode structures. Finally TEOLEDs were also fabricated on the Si wafer and flexible substrate. The brightness and luminance efficiency were (3894 cd/m2;3.8 cd/A on Si wafer),(575 cd/m2, 1.46 cd/A on PES substrate).

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