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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodesKang, Changseok 28 August 2008 (has links)
Not available / text
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodesKang, Changseok, Lee, Jack Chung-Yeung, January 2004 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references. Also available from UMI.
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