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Das bogenspektrum von tantal ...Morsch, Hugo, January 1905 (has links)
Inaug.-diss.--Bonn. / Lebenslauf. Includes bibliographical references.
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A spectrographic study by means of a grating (replica) spectroscope and the determination of the wave lengths of the arc spectrum of tantalumOdell, Allan Fulson. January 1900 (has links)
Thesis (Chemistry)--Vanderbilt. / Typescript.
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Kinetics of the oxidation of tantalum at high temperatures and low oxygen potentials /Adelsberg, Lee Martin January 1964 (has links)
No description available.
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The strain-aging behavior of tantalum and associated problems in the theory of plastic deformation of metals /Hartley, C. S. January 1965 (has links)
No description available.
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Initial oxidation of tungsten and tantalum /Rausch, Doyle William January 1965 (has links)
No description available.
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Passivation effects of surface iodine layer on tantalum for the electroless copper deposition.Liu, Jian 05 1900 (has links)
The ability to passivate metallic surfaces under non-UHV conditions is not only of fundamental interests, but also of growing practical importance in catalysis and microelectronics. In this work, the passivation effect of a surface iodine layer on air-exposed Ta for the copper electroless deposition was investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Although the passivation effect was seriously weakened by the prolonged air exposure, iodine passivates the Ta substrate under brief air exposure conditions so that enhanced copper wetting and adhesion are observed on I-passivated Ta relative to the untreated surface.
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The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and CuYueh, Zhi-Wei 20 June 2000 (has links)
Abstract
The behaviors of the TaNx barrier layer that placed
between the Cu metal and GaAs have been studied
by using X-ray diffraction, X-ray photoelectron
spectroscopy and scanning electron microscopy.
The TaNx and Cu films were deposited on GaAs
sequentially with RF magnetron sputter.
With a 250 nm thick TaNx barrier layer, the Cu
metal can be impeded from reacting with GaAs
substrate at 575¢Jannealed for one hour.
Within an As or Ga overpressure environment condition,
the failure temperature still occurred below 600¢J.
The failure of TaNx diffusion barrier layer for
preventing the reaction of the Cu and GaAs was originated
for the dissociation of the GaAs itself at 580¢J.
The outgoing As atoms increased the deterioration speed
of the TaNx film and reduced its blocking ability.
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Diphenolate Phosphine Complexes of Tantalum(V) and Anilido-Phosphinimine Complexes of Aluminum(III)Cheng, Liang-Chien 08 July 2008 (has links)
The preparation and structural characterization of a series of Tantalum complexes supported by 2,2¡¦-phenylphosphinobis(4,6-di-tert-butyl- phenolate) ([OPO]2-) are described. The reaction of Li2[OPO] with TaCl5 produced yellow crystals of [OPO]2TaCl, regardless of the stoichiometry of the starting materials employed. Alkylation of [OPO]2TaCl with a variety of Grignard reagents generated [OPO]2TaR (R = Me, Et). Formation of [OPO]2TaH arise from [OPO]2TaEt undergo £]-Hydrogen elimination at 120 oC or reaction of [OPO]2TaCl with LiHBEt3. The solid-state structures of [OPO]2TaCl, [OPO]2TaOH and [OPO]2TaH and the solution of these Tantalum complexes were characterized by X-ray crystallography and multinuclear NMR spectroscopy.
A new chelating N, N ligand family incorporation an anilido- phosphinimine donor set has been designed. The ligand 1-(NHAr)-2-(PPh2=NAr)C6H4 ([NN-iPr]; Ar = 2,6-diisopropylphenyl) was prepared by Staudinger reaction with 2,6-diisopropyl- phenylazide and N-(2-diphenylphosphinopheyl)-2,6-diisopropyl-anilide. Deprotonation of H[NN-iPr] with n-BuLi in THF at -35 oC generated [NN-iPr]Li(THF). The reactions of trialkylaluminum with H[NN-iPr] produced the corresponding dialkyl complexes [NN-iPr]AlMe2 and [NN-iPr]AlEt2. The aluminum complexes were all characterized by 1H, 13C{1H}, 31P{1H}, and 27Al{1H} NMR spectroscopy. The solid-state structures of H[NN-iPr] and [NN-iPr]AlMe2 were determined by X-ray crystallography.
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Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/Özdağ, Pınar. Güneş, Mehmet January 2005 (has links) (PDF)
Thesis (Master)--İzmir Institute of Technology, İzmir, 2005 / Keywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)
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Lithium and lithium isotopes in tourmaline as indicators of crystallization processes a study of San Diego County pegmatites, California /Maloney, Jennifer. January 2007 (has links)
Thesis (M.S.)--University of Missouri-Columbia, 2007. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on October 30, 2007) Includes bibliographical references.
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