The classical Fickian model for solute transport in porous media cannot correctly predict the spreading (the dispersion) of contaminant plumes in a heterogeneous subsoil unless its structure is completely characterized. Although the required precision is outside the reach of current field characterization methods, the classical Fickian model remains the most widely used model among practitioners. Two approaches can be adopted to solve the effect of physical heterogeneity on transport. First, upscaling methods allow one to compute “apparent” scale-dependent parameters to be used in the classical Fickian model. In the second approach, upscaled (non-Fickian) transport equations with scale-independent parameters are used. This research aims at comparing upscaling methods for Fickian transport parameters with non-Fickian upscaled transport equations, and evaluate their capabilities to predict solute transport in heterogeneous media. The models were tested using simplified numerical examples (perfectly stratified aquifers and bidimensional heterogeneous media). Hypothetical lognormal permeability fields were investigated, for different values of variance, correlation length and anisotropy ratio. Examples exhibiting discrete and multimodal permeability distributions were also investigated using both numerical examples and a physical laboratory experiment. It was found that non-Fickian transport equations involving fractional derivatives have higher upscaling capabilities regarding the prediction of contaminant plume migration and spreading, although their key parameters can only be inferred from inverse modelling of test data.

This thesis proposes a pricing model for Internet access services. Firstly, demand, pricing and costing practices in communications sector are briefly explored. Then a pricing model for the ADSL Internet access service by T&uuml / rk Telekom is described. The model uses the demand and cost information of a specific service and price is assumed as the key input. The model tries to find the optimum level of prices that maximize the profits under certain constraints regarding the network and customer concerns. The model and its output are discussed in comparison with the international cases and the scope of the further study is addressed in line with the developments occurring in the broadband access market.

Thèse numérisée par la Division de la gestion de documents et des archives de l'Université de Montréal

National Telecommunications policies have been differentiated together with the extension of international trade, increasing importance of information in trade and the convergence of telecommunications, broadcasting and computing sectors. with the influence of these global factors, the subject of this thesis is the study of Mexican and Turkish national telecommunications policies regarding with the deregulation in telecommmunications service sector.

Thesis (M.A.)--University of Wisconsin--Madison, 1965. / eContent provider-neutral record in process. Description based on print version record. Bibliography: l. 83-89.

Thesis (Ph. D.)--University of California, San Diego, 2000. / Vita. Includes bibliographical references (leaves 307-311).

Thesis (M.S.)--Brigham Young University. Dept. of History. / Includes bibliographical references (leaves 138-140).

Thesis (M. Eng.)--Memorial University of Newfoundland, 1999. / Bibliography: leaves 83-88.

Thesis (M.S.)--Brigham Young University. Dept. of History. / Electronic thesis. Includes bibliographical references (leaves 138-140). Also available in print ed.

O ruído de baixa frequência é um limitador de desempenho em circuitos analógicos, digitais e de radiofrequência, introduzindo ruído de fase em osciladores e reduzindo a estabilidade de células SRAM, por exemplo. Transistores de efeito de campo de metalóxido- semicondutor (MOSFETs) são conhecidos pelos elevados níveis de ruído 1= f e telegráfico, cuja potência pode ser ordens de magnitude maior do que a observada para ruído térmico para frequências de até dezenas de kHz. Além disso, com o avanço da tecnologia, a frequência de corner —isto é, a frequência na qual as contribuições dos ruídos térmico e shot superam a contribuição do ruído 1= f — aumenta, tornando os ruídos 1= f e telegráfico os mecanismos dominantes de ruído na tecnologia CMOS para frequências de até centenas de MHz. Mais ainda, o ruído de baixa frequência em transistores nanométricos pode variar significativamente de dispositivo para dispositivo, o que torna a variabilidade de ruído um aspecto importante para tecnologias MOS modernas. Para assegurar o projeto adequado de circuitos do ponto de vista de ruído, é necessário, portanto, identificar os mecanismos fundamentais responsáveis pelo ruído de baixa frequência em MOSFETs e desenvolver modelos capazes de considerar as dependências do ruído com geometria, polarização e temperatura. Neste trabalho é proposta uma técnica para análise de ruído de baixa frequência baseada na autocorrelação dos espectros de ruído em função de parâmetros como frequência, polarização e temperatura. A metodologia apresentada revela informações importantes sobre os mecanismos responsáveis pelo ruído 1= f que são difíceis de obter de outras formas. As análises de correlação realizadas em três tecnologias CMOS comerciais (140 nm, 65 nm e 45 nm) fornecem evidências contundentes de que o ruído de baixa frequência em transistores MOS tipo-n e tipo-p é composto por um somatório de sinais telegráficos termicamente ativados. / Low-frequency noise (LFN) is a performance limiter for analog, digital and RF circuits, introducing phase noise in oscillators and reducing the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known for their particularly high 1= f and random telegraph noise levels, whose power may be orders of magnitude larger than thermal noise for frequencies up to dozens of kHz. With the technology scaling, the corner frequency — i.e. the frequency at which the contributions of thermal and shot noises to noise power overshadow that of the 1= f noise — is increased, making 1= f and random telegraph signal (RTS) the dominant noise mechanism in CMOS technologies for frequencies up to several MHz. Additionally, the LFN levels from device-to-device can vary several orders of magnitude in deeply-scaled devices, making LFN variability a major concern in advanced MOS technologies. Therefore, to assure proper circuit design in this scenario, it is necessary to identify the fundamental mechanisms responsible for MOSFET LFN, in order to provide accurate LFN models that account not only for the average noise power, but also for its variability and dependences on geometry, bias and temperature. In this work, a new variability-based LFN analysis technique is introduced, employing the autocorrelation of multiple LFN spectra in terms of parameters such as frequency, bias and temperature. This technique reveals information about the mechanisms responsible for the 1= f noise that is difficult to obtain otherwise. The correlation analyses performed on three different commercial mixed-signal CMOS technologies (140-nm, 65-nm and 40-nm) provide strong evidence that the LFN of both n- and p-type MOS transistors is primarily composed of the superposition of thermally activated random telegraph signals (RTS).