¡@¡@Wire bonding has been used in integrated circuit packaging for many years which has been more full-grown than other bonding methods, and gold wire has been the preferred choice. Because of the rising price of gold every year, copper wire has been increasingly used to replace gold wire. ¡@¡@The main focus of this paper is to simulate 3D copper-Al pad thermosonic wire bonding stage by using 3D finite element method. Firstly, the differences between mechanical analysis (the thermal effect was not considered) and thermo-mechanical coupling analysis from both impact stage and ultrasonic vibration stage, respectively, were compared. Secondly, the differences between copper thermosonic wire bonding analysis and gold thermosonic wire bonding analysis were discussed. Finally, the effects of Al pad thickness variation on the copper thermosonic wire bonding analysis were studied. ¡@¡@Results showed that, due to the mechanical properties will be decreased by thermal effects caused from temperature increasing, the obtained effective stress and efective strain of thermo-mechanical coupling analysis were less than the results obtained from mechanical analysis. The pad plastic defomation in copper thermosonic wire bonding is more critical than gold thermosonic wire bonding. Therefore, copper thermosonic wire bonding will lead to serious pad splashing. Also, quantity of the decreasing of pad plastic deformation was limited by increasing the pad thickness.

Thermosonic ball bonding is a key technology in electrical interconnections between an integrated circuit and an external circuitry in microelectronics. Although this bonding process has been extensively utilised in electronics packaging industry, certain fundamental aspects behind all the practice are still not fully understood. This thesis is intended to address the existing knowledge gap in terms of bonding mechanisms and interfacial characteristics that are involved in thermosonic gold and copper ball bonding on aluminium pads. The research specifically targets the fine pitch interconnect applications where a thin metal wire of approximately 20 µm in diameter is commonly used. In thermosonic ball bonding process, a thin gold or copper ball formed at the end of a wire is attached to an aluminum pad through a combination of ultrasonic energy, pressure and heat, in order to initiate a complex solid-state reaction. In this research, the mechanisms of thermosonic ball bonding were elaborated by carefully examining interfacial characteristics as the results of the bonding process by utilising dual-beam focused ion beam and high resolution transmission electron microscopy, including the breakdown of the native alumina layer on Al pads, and formation of initial intermetallic compounds (IMCs). The effect of bonding parameters on these interfacial behaviours and bonding strength is also investigated in order to establish an inter-relationship between them. Interfacial evolution in both Au-Al and Cu-Al bonds during isothermal annealing in the temperature rage from 175ºC to 250ºC was investigated and compared. The results obtained demonstrated that the remnant alumina remains inside IMCs and moves towards the ball during annealing. The IMCs are formed preferentially in the peripheral and the central areas of the bonds during bonding and, moreover, they grow from the initially formed IMC particles. Growth kinetics of Cu-Al IMCs obey a parabolic growth law before the Al pad is completely consumed. The activation energies calculated for the growth of CuAl2, Cu9Al4 and the combination (CuAl2 + Cu9Al4) are 60.66 kJ/mol, 75.61 kJ/mol, and 65.83 kJ/mol, respectively. In Au-Al bonds, Au-Al IMC growth is controlled by diffusion only at the start of the annealing process. A t^0.2-0.3 growth law can be applied to the Au-Al IMC growth after the Al pad is depleted. The sequence of IMC phase transformation in both Au-Al and Cu-Al bonds were investigated. Voids in Au-Al bonds grow dramatically during annealing, however, only a few voids nucleate and grow very slowly in Cu-Al bonds. The mechanisms of void formation, including volumetric shrinkage, oxidation and metal diffusion were proposed and discussed.

Microelectronic interconnections require advanced joining techniques. Direct metal bonding methods, which include thercomsonic and thermocompression bonding, offer remarkable advantages over soldering and adhesives joining. These processes are reviewed in this paper. The progress made in this area is outlined. Some work concerned with the bonding modeling is also presented. This model is based on the joint interface mechanics resulting from compression. Both bump and substrate deformation are taken into account. The improved understanding of the relationship between the deformation and bonding formation may provide more accurate joint evaluation criterion. / Singapore-MIT Alliance (SMA)

This thesis demonstrates the feasibility of methods developed to increase the quality of the crescent bond together with the tail bond quality. Low pull force of the crescent bond limits the usage of insulated Au wire in microelectronics assembly. Premature break of the tail which results in the stoppage of the bonding machine is one of obstacles to overcome for Cu wire. The primary focus of this thesis is to understand the tail and crescent bonding process and then to propose methodologies to improve thermosonic wire bonding processes when Cu and insulated Au wires are used. Several series of experiments to investigate the crescent and tail bonding processes are performed on auto bonders. Cu and insulated Au wires with diameters of 25mm are bonded on the diepads of Ag leadframes. For simplicity, wire loops are oriented perpendicular to the ultrasonic direction. It was found that the crescent bond breaking force by pulling the wire loop (pull force) with insulated Au wire is about 80 % of that of bare Au wire. A modification of the crescent bonding process is made to increase the pull force with insulated Au wire. In the modified process, an insulation layer removing stage (cleaning stage) is inserted before the bonding stage. The cleaning stage consists of a scratching motion (shift) toward to the ball bond in combination with ultrasound. Bonds are then made on the fresh diepad with the insulation removed from the contact surface of the insulated Au wire. This process increases the pull force of the crescent bond up to 26% which makes it comparable to the results obtained with bare Au wire. An online tail breaking force measurement method is developed with a proximity sensor between wire clamp and horn. Detailed understanding of tail bond formation is achieved by studying tail bond imprints with scanning electron microscopy and energy dispersive x-ray analysis. Descriptions are given of the dependence of the tail breaking force on the bonding parameters, metallization variation, and cleanliness of the bond pad. Simultaneous optimization with pull force and tail breaking force can optimize the Cu wire bonding process both with high quality and robustness. It is recommended to first carry out conventional pull force optimization followed by a minimization of the bonding force parameter to the lowest value still fulfilling the pull force cpk requirement. The tail bond forms not only under the capillary chamfer, but also under the capillary hole. The tail breaking force includes both the interfacial bond breaking strength and the breaking strength of the thinned portion of the wire that will remain at the substrate as residue. Close investigations of the tail bond imprint with scanning electron microscopy indicate the presence of fractures of the substrate indicating substrate material being picked up by Cu wire tail. Pick up is found on Au and Cu wires, but the amount of pick up is much larger on Cu wire. The effect on the hardness of the subsequently formed Cu free air ball (FAB) as investigated with scanning electron microscopy and micro - hardness test shows that Cu FABs containing Au and Ag pick ups are softer than those without pick up. However, the hardness varies significantly more with Au pick up. The amount of Au pick up is estimated higher than 0.03 % of the subsequently formed FAB volume, exceeding typical impurity and dopant concentrations (0.01 %) added during manufacturing of the wire.

This thesis demonstrates the feasibility of methods developed to increase the quality of the crescent bond together with the tail bond quality. Low pull force of the crescent bond limits the usage of insulated Au wire in microelectronics assembly. Premature break of the tail which results in the stoppage of the bonding machine is one of obstacles to overcome for Cu wire. The primary focus of this thesis is to understand the tail and crescent bonding process and then to propose methodologies to improve thermosonic wire bonding processes when Cu and insulated Au wires are used. Several series of experiments to investigate the crescent and tail bonding processes are performed on auto bonders. Cu and insulated Au wires with diameters of 25mm are bonded on the diepads of Ag leadframes. For simplicity, wire loops are oriented perpendicular to the ultrasonic direction. It was found that the crescent bond breaking force by pulling the wire loop (pull force) with insulated Au wire is about 80 % of that of bare Au wire. A modification of the crescent bonding process is made to increase the pull force with insulated Au wire. In the modified process, an insulation layer removing stage (cleaning stage) is inserted before the bonding stage. The cleaning stage consists of a scratching motion (shift) toward to the ball bond in combination with ultrasound. Bonds are then made on the fresh diepad with the insulation removed from the contact surface of the insulated Au wire. This process increases the pull force of the crescent bond up to 26% which makes it comparable to the results obtained with bare Au wire. An online tail breaking force measurement method is developed with a proximity sensor between wire clamp and horn. Detailed understanding of tail bond formation is achieved by studying tail bond imprints with scanning electron microscopy and energy dispersive x-ray analysis. Descriptions are given of the dependence of the tail breaking force on the bonding parameters, metallization variation, and cleanliness of the bond pad. Simultaneous optimization with pull force and tail breaking force can optimize the Cu wire bonding process both with high quality and robustness. It is recommended to first carry out conventional pull force optimization followed by a minimization of the bonding force parameter to the lowest value still fulfilling the pull force cpk requirement. The tail bond forms not only under the capillary chamfer, but also under the capillary hole. The tail breaking force includes both the interfacial bond breaking strength and the breaking strength of the thinned portion of the wire that will remain at the substrate as residue. Close investigations of the tail bond imprint with scanning electron microscopy indicate the presence of fractures of the substrate indicating substrate material being picked up by Cu wire tail. Pick up is found on Au and Cu wires, but the amount of pick up is much larger on Cu wire. The effect on the hardness of the subsequently formed Cu free air ball (FAB) as investigated with scanning electron microscopy and micro - hardness test shows that Cu FABs containing Au and Ag pick ups are softer than those without pick up. However, the hardness varies significantly more with Au pick up. The amount of Au pick up is estimated higher than 0.03 % of the subsequently formed FAB volume, exceeding typical impurity and dopant concentrations (0.01 %) added during manufacturing of the wire.

Gold wire bonding typically uses 60 KHz ultrasonic frequency. Studies have been reported that increasing ultrasonic frequency from 60KHz to 120KHz can decrease bonding time, lower bonding temperature, and/or improve the bondability of Au metalized organic substrates. This thesis presents a systematic study of the effects of 120 KHz ultrasonic frequency on the reliability of fine pitch gold wire bonding. Two wire sizes, 25.4 and 17.8 μm in diameter (1.0 and 0.7 mil, respectively) were used. The gold wires were bonded to metalized pads over organic substrates with five different metallization. The studies were carried out using a thermosonic ball bonder that is able to easily switch from ultrasonic frequency from 60 KHz to 120 KHz by changing the ultrasonic transducer and the ultrasonic generator. Bonding parameters were optimized through design of experiment methodology for four different cases: 60 KHz with 25.4 μm wire, 60 KHz with 17.8 μm wire, 120 KHz with 25.4 μm wire, and 120 KHz with 17.8 μm wire. The integrity of wire bonds was evaluated by the wire pull and the ball bond shear tests. With the optimized bonding parameters, over 2,250 bonds were made for each frequency and wire size. The samples were then divided into three groups. The first group was subjected to temperature cycling from -55°C to +125°C with one hour per cycle for up to 1000 cycles. The second group was subject to thermal aging at 125°C for up to 1000 hours. The third group was subject to humidity at 85°C/85% relative humidity (RH) for up to 1000 hours. The bond integrity was evaluated through the wire pull and the ball shear tests immediately after bonding, and after each 150, 300, 500, and 1000 hours time interval in the reliability tests. The pull and shear data are then analyzed to compare the wire bond performance between different ultrasonic frequencies.

Thermosonic ball bonding is the most popular method used to create electrical interconnects between integrated circuits (ICs) and substrates in the microelectronics industry. Traditionally gold (Au) wire is used, however with industry demands for lower costs and higher performance, novel wire materials are being considered. Some of these wire materials include Cu, insulated, and coated wires. The most promising of which being Cu wire. Some of the main issues with these wire materials is their performance in the electrical flame off (EFO) step of the wire bonding process. In the EFO step a ball called the free air ball (FAB) is formed on the end of the wire. The quality of the FAB is essential for reliable and strong ball bonds. In Cu wire bonding the hardness of the FAB and oxidation are the main issues. A hard FAB requires larger bonding forces and US levels to make the bond which increases the likelihood of damage to the IC. Excessive oxidation acts as a contaminant at the bond interface and can also influence the shape of the FAB. Shielding gases are required to reduce oxidation and improve FAB quality. This thesis focuses on the EFO process and the influence of EFO parameters and shielding gases on Au and Cu FABs. The primary focus of this thesis is to provide a better understanding of the EFO process in order to expedite the introduction of novel wire materials into industry. Several different experiments are performed on an automated thermosonic wire bonder with 25 µm Au and Cu wires to investigate the EFO process during ball bonding. The effects of EFO parameters on the hardness and work hardening of FABs and the effects of shielding gas type and flow rates on the quality of the FABs are determined. The EFO discharge characteristics in different shielding gases is also studied to better understand how the composition of the atmosphere the FAB is formed in influences the energy input via the EFO electrical discharge. Using the online deformability method and Vickers microhardness testing it is found that the EFO current (IEFO) and EFO time (tEFO) have a large influence on the hardness and work hardening of Au and Cu FABs. A harder FAB produced with a large IEFO and low tEFO will work harden less during deformation. The bonded ball will be softer than that of a FAB produced with a lower IEFO and higher tEFO. The online deformability method is found to be twice as precise as the Vickers microhardness test. An online method for characterizing the quality of FABs is developed and used to identify shielding gas flow rates that produce defective FABs. The EFO process for an Au wire and two Cu wire materials is investigated in flow rates of 0.2-1.0 l/min of forming gas (5 % H2 + 95 % N2) and N2 gas. All three of the most common FAB defects are identified with this online method. It is found that good quality FABs cannot be produced above flow rates of 0.7 l/min and that H2 in the shielding gas adds a thermal component to the EFO process. It is recommended that the gas flow rate be optimized for each new wire type used. The EFO discharge power is measured to be 12 % higher in a N2 gas atmosphere than in a forming gas atmosphere. The lower ionization potential of the forming gas leads to a higher degree of ionization and therefore lower resistance across the discharge gap. It was found that the discharge power does not determine the energy transferred to the wire anode because the Au FAB produced in forming gas has a 6 % larger diameter than that of the FABs produced in N2 gas. Other factors that effect the voltage of the EFO discharge include the controlled EFO current, the discharge gap, and the wire anode material.

Thermosonic ball bonding is the most popular method used to create electrical interconnects between integrated circuits (ICs) and substrates in the microelectronics industry. Traditionally gold (Au) wire is used, however with industry demands for lower costs and higher performance, novel wire materials are being considered. Some of these wire materials include Cu, insulated, and coated wires. The most promising of which being Cu wire. Some of the main issues with these wire materials is their performance in the electrical flame off (EFO) step of the wire bonding process. In the EFO step a ball called the free air ball (FAB) is formed on the end of the wire. The quality of the FAB is essential for reliable and strong ball bonds. In Cu wire bonding the hardness of the FAB and oxidation are the main issues. A hard FAB requires larger bonding forces and US levels to make the bond which increases the likelihood of damage to the IC. Excessive oxidation acts as a contaminant at the bond interface and can also influence the shape of the FAB. Shielding gases are required to reduce oxidation and improve FAB quality. This thesis focuses on the EFO process and the influence of EFO parameters and shielding gases on Au and Cu FABs. The primary focus of this thesis is to provide a better understanding of the EFO process in order to expedite the introduction of novel wire materials into industry. Several different experiments are performed on an automated thermosonic wire bonder with 25 µm Au and Cu wires to investigate the EFO process during ball bonding. The effects of EFO parameters on the hardness and work hardening of FABs and the effects of shielding gas type and flow rates on the quality of the FABs are determined. The EFO discharge characteristics in different shielding gases is also studied to better understand how the composition of the atmosphere the FAB is formed in influences the energy input via the EFO electrical discharge. Using the online deformability method and Vickers microhardness testing it is found that the EFO current (IEFO) and EFO time (tEFO) have a large influence on the hardness and work hardening of Au and Cu FABs. A harder FAB produced with a large IEFO and low tEFO will work harden less during deformation. The bonded ball will be softer than that of a FAB produced with a lower IEFO and higher tEFO. The online deformability method is found to be twice as precise as the Vickers microhardness test. An online method for characterizing the quality of FABs is developed and used to identify shielding gas flow rates that produce defective FABs. The EFO process for an Au wire and two Cu wire materials is investigated in flow rates of 0.2-1.0 l/min of forming gas (5 % H2 + 95 % N2) and N2 gas. All three of the most common FAB defects are identified with this online method. It is found that good quality FABs cannot be produced above flow rates of 0.7 l/min and that H2 in the shielding gas adds a thermal component to the EFO process. It is recommended that the gas flow rate be optimized for each new wire type used. The EFO discharge power is measured to be 12 % higher in a N2 gas atmosphere than in a forming gas atmosphere. The lower ionization potential of the forming gas leads to a higher degree of ionization and therefore lower resistance across the discharge gap. It was found that the discharge power does not determine the energy transferred to the wire anode because the Au FAB produced in forming gas has a 6 % larger diameter than that of the FABs produced in N2 gas. Other factors that effect the voltage of the EFO discharge include the controlled EFO current, the discharge gap, and the wire anode material.

The goal of this thesis is on improving the understanding of mechanical and tribological mechanisms in microelectronic wire bonding. In particular, it focusses on the development and application of quantitative models of ultrasonic (US) friction and interfacial wear in wire bonding. Another objective of the thesis is to develop a low-stress Cu ball bonding process that minimizes damage to the microchip. These are accomplished through experimental measurements of in situ US tangential force by piezoresistive microsensors integrated next to the bonding zone using standard complementary metal oxide semiconductor (CMOS) technology. The processes investigated are thermosonic (TS) Au ball bonding on Al pads (Au-Al process), TS Cu ball bonding on Al pads (Cu-Al process), and US Al wedge-wedge bonding on Al pads (Al-Al process). TS ball bonding processes are optimized with one Au and two Cu wire types, obtaining average shear strength (SS) of more than 120 MPa. Ball bonds made with Cu wire show at least 15% higher SS than those made with Au wire. However, 30% higher US force induced to the bonding pad is measured for the Cu process using the microsensor, which increases the risk of underpad damage. The US force can be reduced by: (i) using a Cu wire type that produces softer deformed ball results in a measured US force reduction of 5%; and (ii) reducing the US level to 0.9 times the conventionally optimized level, the US force can be reduced by 9%. It is shown that using a softer Cu deformed ball and a reduced US level reduces the extra stress observed with Cu wire compared to Au wire by 42%. To study the combined effect of bond force (BF) and US in Cu ball bonding, the US parameter is optimized for eight levels of BF. For ball bonds made with conventionally optimized BF and US settings, the SS is ≈ 140 MPa. The amount of Al pad splash extruding out of bonded ball interface (for conventionally optimized BF and US settings) is between 10–12 µm. It can be reduced to 3–7 µm if accepting a SS reduction to 50–70 MPa. For excessive US settings, elliptical shaped Cu bonded balls are observed, with the major axis perpendicular to the US direction. By using a lower value of BF combined with a reduced US level, the US force can be reduced by 30% while achieving an average SS of at least 120 MPa. These process settings also aid in reducing the amount of splash by 4.3 µm. The US force measurement is like a signature of the bond as it allows for detailed insight into the tribological mechanisms during the bonding process. The relative amount of the third harmonic of US force in the Cu-Al process is found to be five times smaller than in the Au-Al process. In contrast, in the Al-Al process, a large second harmonic content is observed, describing a non-symmetric deviation of the force signal waveform from the sinusoidal shape. This deviation might be due to the reduced geometrical symmetry of the wedge tool. The analysis of harmonics of the US force indicates that although slightly different from each other, stick-slip friction is an important mechanism in all these wire bonding variants. A friction power theory is used to derive the US friction power during Au-Al, Cu-Al, and Al-Al processes. Auxiliary measurements include the current delivered to the US transducer, the vibration amplitude of the bonding tool tip in free-air, and the US tangential force acting on the bonding pad. For bonds made with typical process parameters, several characteristic values used in the friction power model such as the ultrasonic compliance of the bonding system and the profile of the relative interfacial sliding amplitude are determined. The maximum interfacial friction power during Al-Al process is at least 11.5 mW (3.9 W/mm²), which is only about 4.8% of the total electrical power delivered to the US transducer. The total sliding friction energy delivered to the Al-Al wedge bond is 60.4 mJ (20.4 J/mm²). For the Au-Al and Cu-Al processes, the US friction power is derived with an improved, more accurate method to derive the US compliance. The method uses a multi-step bonding process. In the first two steps, the US current is set to levels that are low enough to prevent sliding. Sliding and bonding take place during the third step, when the current is ramped up to the optimum value. The US compliance values are derived from the first two steps. The average maximum interfacial friction power is 10.3 mW (10.8 W/mm²) and 16.9 mW (18.7 W/mm²) for the Au-Al and Cu-Al processes, respectively. The total sliding friction energy delivered to the bond is 48.5 mJ (50.3 J/mm²) and 49.4 mJ (54.8 J/mm²) for the Au-Al and Cu-Al processes, respectively. Finally, the sliding wear theory is used to derive the amount of interfacial wear during Au-Al and Cu-Al processes. The method uses the US force and the derived interfacial sliding amplitude as the main inputs. The estimated total average depth of interfacial wear in Au-Al and Cu-Al processes is 416 nm and 895 nm, respectively. However, the error of estimation of wear in both the Au-Al and the Cu-Al processes is ≈ 50%, making this method less accurate than the friction power and energy results. Given the error in the determination of compliance in the Al-Al process, the error in the estimation of wear in the Al-Al process might have been even larger; hence the wear results pertaining to the Al-Al process are not discussed in this study.

The goal of this thesis is on improving the understanding of mechanical and tribological mechanisms in microelectronic wire bonding. In particular, it focusses on the development and application of quantitative models of ultrasonic (US) friction and interfacial wear in wire bonding. Another objective of the thesis is to develop a low-stress Cu ball bonding process that minimizes damage to the microchip. These are accomplished through experimental measurements of in situ US tangential force by piezoresistive microsensors integrated next to the bonding zone using standard complementary metal oxide semiconductor (CMOS) technology. The processes investigated are thermosonic (TS) Au ball bonding on Al pads (Au-Al process), TS Cu ball bonding on Al pads (Cu-Al process), and US Al wedge-wedge bonding on Al pads (Al-Al process). TS ball bonding processes are optimized with one Au and two Cu wire types, obtaining average shear strength (SS) of more than 120 MPa. Ball bonds made with Cu wire show at least 15% higher SS than those made with Au wire. However, 30% higher US force induced to the bonding pad is measured for the Cu process using the microsensor, which increases the risk of underpad damage. The US force can be reduced by: (i) using a Cu wire type that produces softer deformed ball results in a measured US force reduction of 5%; and (ii) reducing the US level to 0.9 times the conventionally optimized level, the US force can be reduced by 9%. It is shown that using a softer Cu deformed ball and a reduced US level reduces the extra stress observed with Cu wire compared to Au wire by 42%. To study the combined effect of bond force (BF) and US in Cu ball bonding, the US parameter is optimized for eight levels of BF. For ball bonds made with conventionally optimized BF and US settings, the SS is ≈ 140 MPa. The amount of Al pad splash extruding out of bonded ball interface (for conventionally optimized BF and US settings) is between 10–12 µm. It can be reduced to 3–7 µm if accepting a SS reduction to 50–70 MPa. For excessive US settings, elliptical shaped Cu bonded balls are observed, with the major axis perpendicular to the US direction. By using a lower value of BF combined with a reduced US level, the US force can be reduced by 30% while achieving an average SS of at least 120 MPa. These process settings also aid in reducing the amount of splash by 4.3 µm. The US force measurement is like a signature of the bond as it allows for detailed insight into the tribological mechanisms during the bonding process. The relative amount of the third harmonic of US force in the Cu-Al process is found to be five times smaller than in the Au-Al process. In contrast, in the Al-Al process, a large second harmonic content is observed, describing a non-symmetric deviation of the force signal waveform from the sinusoidal shape. This deviation might be due to the reduced geometrical symmetry of the wedge tool. The analysis of harmonics of the US force indicates that although slightly different from each other, stick-slip friction is an important mechanism in all these wire bonding variants. A friction power theory is used to derive the US friction power during Au-Al, Cu-Al, and Al-Al processes. Auxiliary measurements include the current delivered to the US transducer, the vibration amplitude of the bonding tool tip in free-air, and the US tangential force acting on the bonding pad. For bonds made with typical process parameters, several characteristic values used in the friction power model such as the ultrasonic compliance of the bonding system and the profile of the relative interfacial sliding amplitude are determined. The maximum interfacial friction power during Al-Al process is at least 11.5 mW (3.9 W/mm²), which is only about 4.8% of the total electrical power delivered to the US transducer. The total sliding friction energy delivered to the Al-Al wedge bond is 60.4 mJ (20.4 J/mm²). For the Au-Al and Cu-Al processes, the US friction power is derived with an improved, more accurate method to derive the US compliance. The method uses a multi-step bonding process. In the first two steps, the US current is set to levels that are low enough to prevent sliding. Sliding and bonding take place during the third step, when the current is ramped up to the optimum value. The US compliance values are derived from the first two steps. The average maximum interfacial friction power is 10.3 mW (10.8 W/mm²) and 16.9 mW (18.7 W/mm²) for the Au-Al and Cu-Al processes, respectively. The total sliding friction energy delivered to the bond is 48.5 mJ (50.3 J/mm²) and 49.4 mJ (54.8 J/mm²) for the Au-Al and Cu-Al processes, respectively. Finally, the sliding wear theory is used to derive the amount of interfacial wear during Au-Al and Cu-Al processes. The method uses the US force and the derived interfacial sliding amplitude as the main inputs. The estimated total average depth of interfacial wear in Au-Al and Cu-Al processes is 416 nm and 895 nm, respectively. However, the error of estimation of wear in both the Au-Al and the Cu-Al processes is ≈ 50%, making this method less accurate than the friction power and energy results. Given the error in the determination of compliance in the Al-Al process, the error in the estimation of wear in the Al-Al process might have been even larger; hence the wear results pertaining to the Al-Al process are not discussed in this study.