Zinc selenide is a wide bandgap II-VI semiconductor. The minimum bandgap at £F point (zone center) is direct and has a room temperature value of 2.67eV, corresponding to the blue region of the visible spectrum (464nm). Molecular beam epitaxy (MBE) is an ultra high vacuum technique used for the growth of semiconductors. The molecular beam epitaxy system used for the growth of semiconductors . The molecular beam epitaxy system used for growth of the II-VI semiconductor layers is described in detail in Chapter 2. Chapter 3 describes the substrate preparation procedure and growth of ZnSe epitaxial layers. Last, information from characterization technique has been used to analysis the quality of the layers and hence determine referred growth conditions.

Deposition of thin films is one of the most widespread applications used for the changes of surface properties of various materials. This diploma thesis is focused on diagnosing of thin film generated by a PECVD technique. The capacitively coupled RF discharge at low pressure was used for the thin films deposition using tetrafluoromethane (CF4) with addition of hydrogen (H2) as a precursor. The aim of the work was the search of optimal conditions for a hydrophobic thin layer preparation on the surface of polymer NOA. The depositions were performed in continuous and pulsed mode with different duty cycle. The discharge was monitored using optical emission spectroscopy and in situ mass spectrometry. Thin films structure and properties were characterized using water contact angle measurements, X-ray photoelectron spectroscopy, infrared spectroscopy and optical ellipsometry. The influence of varying power, gas mixture composition and discharge mode were investigated. Water contact angle was the highest for a deposition in a continuous mode. Decomposition processes inside the reactor were observed by using mass spectrometry and optical emission spektrokopie. X-ray photoelectron spectroscopy provided information about the chemical bonds represented on the surface of sample. These were mainly C – C/C – H, C – O, O = C - O groups for sample without layer. Other chemical bonds were observed after the deposition. These were mainly C – CF, CF2 and CF3 groups. The film thickness of about 8,2 nanometers was measured by optical ellipsometry. The obtained results may be used as a fundament for further more advanced study of plasma chemically prepared thin fluorocarbon films and their properties.

The main objective of this thesis is the study of the optical and optoelectronic properties of organic semiconducting materials. At the beginning of this thesis is shown the growing interest in these materials and their practical application. The theoretical part presents the current state of knowledge of studied problematic related to optical phenomena and the transport of charge carriers in organic semiconductors, photochormic phenomena of reversible molecular switch and charge transfer in DNA biopolymeric matrix. Experimental section, which consists of selected author’s publications, includes study of the charge transport, photochromic reversible switching and the role of dopant in pi-conjugated organic polymer system. Conductive and semiconductive characteristics of the DNA biopolymer have been aslo studied. Conductive and photoconductive techniques together with measurement of the optical characteristics have been used for organic semiconductors characterization.