The behaviour of thin film semiconducting and magnetic devices depends upon the chemical and physical status of the as-grown structure. Since the dimensions of many devices can be in the Angstrom and nanometre region, characterisation techniques capable of measuring chemical and physical parameters in this regime are necessary if an understanding of the effect of specimen structure on observed properties is to be achieved. This thesis uses high resolution x-ray scattering techniques to characterise sub-micron layered structures of semiconducting and magnetic materials. Double crystal diffraction is routinely employed in the semiconductor industry for the on line inspection of sample quality. While material parameters such as sample perfection and layer composition may be rapidly deduced, the non-destructive measurement of layer thickness is more difficult (particularly for multilayered samples) and lengthy simulation procedures are often necessary to extract the thickness information from a double crystal diffraction profile. However, for semiconductor structures which act as Bragg case interferometers, oscillations (known as thickness fringes) appear in the diffracted profile. The period of these fringes can be directly related to layer thickness. Attempts to Fourier transform diffraction data, in order to automatically extract the frequency" of thickness fringes, have previously been only partially successful. It is shown that the relatively weak intensity of the thickness fringes and the presence of the substrate peak in the analysed diffraction data, drastically reduce the quality of the subsequent Fourier transform. A procedure for the manipulation of diffraction data is suggested, where an "average” envelope is fitted to the thickness fringes and used to normalise the data. The application of an auto-correlation is shown to further increase the quality of the Fourier transform of the normalised data. The application of Fourier transform techniques to the routine analysis of double crystal diffraction data is discussedA novel technique for the measurement of absolute lattice parameters of single crystals is presented, which is capable of determining lattice constants with an absolute accuracy of around 2 parts in 10(^5). The technique requires only the use of a conventional triple crystal diffractometer with motorised 20 circle movement and the provision for a fine, precise rocking motion of the analyser. To demonstrate the technique, exemplary measurements on GaAs and InAs crystals are presented. Triple crystal diffi-action analysis has been performed on three material systems of current technological interest; the Hg(_1-x)Mn(_x)Te on GaAs, the Cd(_1-x)Hg(_x)Te on CdTe/Cd(_1-x)Zn(_x)Te and the low temperature grown GaAs systems. Studies on the Hg(_1-x)Mn(_x)Te on GaAs system reveal that the principal contribution to the rocking curve widths of layers grown using the direct alloy growth (DAG) method, arise from the tilt (i.e., mosaicity) of layer sub-grains. This finding is confirmed by double crystal topography which shows that the layers are highly mosaic with a typical grain size of (130±5)µm. Topographic studies of Hg(_1-x)Mn(_x)Te on GaAs, grown using the interdiffused multilayer process (IMP), show that sample quality is significantly improved with single crystal material being produced using this growth method. Triple crystal diffraction studies of the Cd(_1-x)Hg(_x)Te on CdTe/Cd(_0.96)Zn(_0.04)Te systems reveal several findings. These are that the main contribution to rocking curve widths is from lattice tilts and that the tilt distribution increases as the layer thickness decreases. Further, the quality of the Cd(_0.96)Zn(_0.04)Te substrate analysed is superior to that of the CdTe and that Cd(_1-x)Hg(_x)Te layers grown on Cd(_0.96)Zn(_0.04)Te substrates are generally of a higher quality than those grown on CdTe. Triple crystal analysis of MBE and ALE grown GaAs films, deposited at low growth temperatures, show that, at equivalent temperatures, superior quality films are grown by the ALE technique. Narrow lattice dilation and tilt distributions are reported for GaAs films grown at temperatures as low as 300ºC by the ALE method. While diffraction techniques are highly suitable for the study of relatively perfect crystalline material, they are not appropriate to the analysis of heavily dislocated or even amorphous specimens. This is not the case for the Grazing Incidence X-Ray Reflectivity (GIXR) technique, whose sensitivity is not dependent upon sample structure. The GIXR technique is currently attracting increasing interest following the development of commercial instruments. In this thesis, GIXR has been used to probe the layer thickness and interfacial roughness of a series of magnetic multilayer samples and Si/Si(_x)Ge(_1-x) superlattices. The technique is shown to be capable of measuring layer thickness to an accuracy of one monolayer. Modelling of specular GIXR data for the Si/Si(_x)Ge(_1-x) superlattices has shown that the magnitude of interfacial roughness is different for the two types of interface within the high Ge content superlattice samples, the Si(_x)Ge(_1-x)→Si interface possessing a long range sinusoidal roughness of (0.9±0.3)nm, in addition to die short range roughness of (0.5±0.2)nm present at all interfaces. By collecting the diffuse scatter from a GIXR experiment, conformal, or correlated, roughness has been observed in both the multilayer and superlattice samples.

The application of the metalorganic chemical vapour deposition technique to the production of II-VI compound semiconductor electroluminescent devices is discussed. Both low field MIS minority carrier injection devices and high field impact excitation structures are considered, and comparisons are drawn with more commiercially orientated electroluminescent displays. The epitaxial growth of ZnS and ZnSe onto (100) orientated GaAs substrates, using the reactions between dimethyl zinc and the hydrides HgS and H2Se, is described. Details are given of a novel epitaxial MISi device processing technology, in which a ZnS I-layer also acts as an etch-stop, thus enabling chemical removal of the GaAs substrate. Metal electrodes deposited directly onto the ZnS and ZnSe allow the electrical and electroluminescent characteristics of these epitaxial II-VI compound layers to be investigated in the absence of any influence from the substrate material. X-ray diffraction and reflection high energy electron dififraction confirm that the structures are epitaxial and of excellent crystallinity. It is demonstrated in an electron beam induced current study that conduction in the epitaxial MIS devices is highly uniform, and this is manifested in a uniform spatial distribution of electroluminescence. A description is given of high field impact excitation electroluminescent devices, in which the ZnS layer is doped with manganese during MOCVD growth. The spatial distribution of EL in these devices is shown to be non-uniform, and thus indicative of filamentary conduction in the ZnS:Mn, in accordance with a recently proposed dielectric breakdown model of instability. It is demonstrated that the transient characteristics of the epitaxial structures correlate with those of commercial polycrystalline devices, and are also consistent with the predictions of a dynamic model of instability. As a result of filamentary conduction, both epitaxial and polycrystalline devices are prone to degradation through localised dielectric breakdown. These breakdown events generally result in a gradual erosion of the active electrode area, although, under certain operating conditions, mobile filaments can cause rapid destruction of epitaxial structures. The columnar microstructure of sputtered devices appears to prevent such filament mobility, and it is concluded that, although filamentary conduction is a result of the carrier injection mechanism and is independent of the crystallinity, the associated damage is strongly influenced by the microstructure of the device.

The fabrication of pyroelectric devices using the Langmuir-Blodgett (LB) technique is described. Studies of a wide range of materials are reported; however, the thesis concentrates on electrical and structural investigations of two specific alternate layer films: 22-tricosenoic acid/l-docosylamine and 22-tricosenoic acid/4-octadecylaniline. The latter system possesses a pyroelectric coefficient of 0.65 nCcm(^-2)K(^-1), representing the largest reported value, to date, for an LB film. The pyroelectric figure of merit (p/e(^1)(_T)) of such films is approximately 0.22 nCcm(^-2)K(^-1), which is comparable with the values for commercially available materials. The difference in pyroelectric coefficient of the two types of alternate layer film is attributed to differences in inter-layer bonding, as revealed by infrared spectroscopy. The dependence of the pyroelectric coefficients on parameters such as film thickness, substrate thickness and temperature is investigated. Structural studies, performed using electron and X-ray diffraction techniques, are also described. These provide information on the orientation of the molecules relative to the substrate and on the d-spacing of the LB films. It is shown that the substrate has a deleterious effect on the responsivity of LB film devices, and studies of films deposited onto different substrate materials indicate that there is a significant piezoelectric ally induced secondary effect contributing to the overall pyroelectric coefficient. This secondary effect is small at low temperatures, but becomes dominant at around 250 K. The results of thermally stimulated discharge experiments indicate that both free charges and dipolar groups are incorporated in the films during deposition, and become tightly bound within the polar structure.

No description available.

Thin-film silicon photovoltaics are seen as a good possibility for reducing the cost of solar electricity. The focus of this thesis is the ALICIA cell, a thin-film polycrystalline silicon solar cell made on a glass superstrate. The name ALICIA comes from the fabrication steps - ALuminium Induced Crystallisation, Ion Assisted deposition. The concept is to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallisation (AIC). This is then the template from which to epitaxially grow the solar cell structure by Ion Assisted Deposition (IAD). IAD allows high-rate silicon epitaxy at low temperatures compatible with glass. In thin-film solar cells, light trapping is critical to increase the absorption of the solar spectrum. ALICIA cells have been fabricated on textured glass sheets, increasing light absorption due to their anti-reflection nature and light trapping properties. A 1.8 μm thick textured ALICIA cell absorbs 55% of the AM1.5G spectrum without a back-surface reflector, or 76% with an optimal reflector. Experimentally, Pigmented Diffuse Reflectors (PDRs) have been shown to be the best reflector. These highly reflective and optically diffuse materials increase the light-trapping potential and hence the short-circuit currents of ALICIA cells. In textured cells, the current increased by almost 30% compared to using a simple aluminium reflector. Current densities up to 13.7 mA/cm2 were achieved by application of a PDR to the best ALICIA cells. The electronic quality of the absorber layer of ALICIA cells is strongly determined by the epitaxy process. Very high-rate epitaxial growth decreases the crystalline quality of the epitaxial layer, but nevertheless increases the short-circuit current density of the solar cells. This indicates that the diffusion length in the absorber layer of the ALICIA cell is primarily limited by contamination, not crystal quality. Further gains in current density can therefore be achieved by increasing the deposition rate of the absorber layer, or by improving the vacuum quality. Large-area ALICIA cells were then fabricated, and series resistance reduced by using an interdigitated metallisation scheme. The best measured efficiency was 2.65%, with considerable efficiency gains still possible from optimisation of the epitaxial growth and metallisation processes.

Polycrystalline silicon (poly-Si) thin-film solar cells are receiving attention by many researchers in recent times. The focus of this thesis is the evaporated ALICE solar cell, a thin-film poly-Si solar cell fabricated on a glass superstrate by e-beam evaporation. The acronymn ALICE comes from - ALuminium Induced Crystallization Solid Phase Epitaxy. The concept is first to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallization (AIC). The AIC seed layer (grain size>20 ??m) acts as the template from which the crystalline information is transferred into the silicon over-layer by solid-phase epitaxy (SPE). As a result, the ALICE solar cells have much larger grain size compared to the poly-Si thin-film solar cell (2~3 ??m) by random nucleation and growth (RNG). This leads to the minimized grain boundary recombination and hence potential improved conversion efficiency. The temperature of 200??C is found to be optimal for the deposition of amorphous Si (a-Si) precursor thin films. The epitaxy process of the ALICE cell is successful, proving the feasibility and reliability of the deposition and post-treatment processes. The ALICE cell is successfully metallized using a bifacial interdigitated scheme. Wet etching using KOH is introduced to realize the uniform Si etching, and phosphoric acid etching is introduced to remove the local shunts in the ALICE cell. The results show that the material quality of ALICE solar cells are much worse than that of the AIC seed layer, which is related to the poor epitaxy quality on (111) planes grown from the AIC seed layer. Additional experiments show that the fraction of (100) oriented grains in AIC is the main factor in determining the material quality and the resulting solar cell performance, rather than grain size. Therefore, both a high fraction of (100) oriented grains and large grain size are required for AIC seed layers to achieve the ALICE solar cells with superior performance. Comparison of the ALICE cells prepared at different base pressures and deposition rates show that the base pressure is much less important than the deposition rate. Therefore, the capital cost of the evaporator system can be reduced and hence potentially the manufacturing cost of solar cells. The densification anneal was introduced to improve the crystal quality of poly-Si thin films by SPE. It is shown that the cause is the structural relaxation induced into the a-Si film, instead of the prevention of the oxygen percolation. The crystal quality of c-Si films obtained from low-rate (50 nm/min) evaporated a-Si is considerably improved by densification anneal, whereas densification has no beneficial effect on c-Si films obtained from high-rate (300 nm/min) evaporated a-Si. However, the densification anneal has no improvement on the electrical performance of ALICE solar cell. The ALICE solar cell performances are strongly related to the doping level in the absorber layer. The optimal doping density needs to be determined to achieve the best performance. The highest Voc and Jsc are simultaneously achieved when the minimum phosphorous doping density of ~5.5??1015 cm-3 (unintentionally doped) is applied for the evaporated ALICE solar cells. Since silicon is a weak absorber and ALICE solar cell has only ~1.5 ??m thickness, light trapping is applied to enhance the light absorption of the visible and the red light. Three different approaches are applied: ALICE cells on textured glass sheet, back surface reflector and thicker Si film. The ALICE cells on textured glass suffer from a significant loss of performance. The only successful approach to improve the light trapping in this thesis is to apply white paint as back surface reflector, which increases the Jsc drastically (~60%) compared to a planar sample. Analysis of the optical properties of poly-Si thin films is important as it assists the design of the thin-film solar cells. It is found that there is enhanced absorption in the visible wavelengths. This is mainly attributed to defected a-Si material at the grain boundaries. The hydrogenation process does not affect this enhanced absorption. The optical analysis proves that large grain size is desired to obtain high performance poly-Si thin-film solar cell, e.g. ALICE solar cell. At the end of this research, ALICE cells with η~3.83%, Voc~485 mV, Jsc~17.75 mA/cm2 have been achieved.

Thesis (Ph.D.)--University of Texas at Dallas, 2009. / Includes vita. Includes bibliographical references (leaves 159-165)

Thesis (Ph. D.)--Lehigh University, 2005. / Includes vita. Includes bibliographical references (leaves 232-256).

Thesis (M. Phil.)--University of Hong Kong, 2002. / Includes bibliographical references.

Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Includes bibliographical references.