by Yun-hung Ng. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yun-hung Ng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Background of Study --- p.1 / Chapter 1.2 --- General Properties of a-SiNx and a-SiOxNy --- p.1 / Chapter 1.3 --- Common Preparation Methods of a-SiNx and a-SiOxNy --- p.2 / Chapter 1.4 --- Applications of a-SiNx in Microelectronics --- p.4 / Chapter 1.5 --- Applications of a-SiOxNy in Microelectronics --- p.6 / References --- p.8 / Chapter Chapter 2 --- METHODOLOGY --- p.10 / Chapter 2.1 --- Introduction --- p.10 / Chapter 2.2 --- Mott Rule --- p.10 / Chapter 2.3 --- Random Mixture Model --- p.11 / Chapter 2.4 --- Random Bonding Model --- p.12 / Chapter 2.5 --- Hasegawa Model --- p.15 / References --- p.20 / Chapter Chapter 3 --- INSTRUMENTATION --- p.21 / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.21 / Chapter 3.1.1 --- Fundamental Theory of XPS --- p.21 / Chapter 3.1.2 --- Qualitative Analysis using XPS --- p.25 / Chapter 3.1.2.1 --- Chemical Shift --- p.25 / Chapter 3.1.2.2 --- Angular Effect on XPS --- p.28 / Chapter 3.1.2.3 --- Valence Band Investigation --- p.28 / Chapter 3.1.3 --- Quantitative Analysis using XPS --- p.30 / Chapter 3.1.4 --- Instrumental Setup of XPS --- p.33 / Chapter 3.2 --- Ultraviolet Photoelectron Spectroscopy --- p.37 / Chapter 3.2.1 --- Basic Theory of UPS --- p.37 / Chapter 3.2.2 --- Instrumentation --- p.38 / References --- p.41 / Chapter Chapter 4 --- SHORT RANGE ORDER OF a-SiNx --- p.42 / Chapter 4.1 --- Sample Preparation --- p.42 / Chapter 4.2 --- XPS Analysis of a-SiNx --- p.43 / Chapter 4.2.1 --- Angle Resolved XPS Analysis --- p.43 / Chapter 4.2.2 --- RB Model and RM Model Simulation of a-SiNx --- p.43 / Chapter 4.2.3 --- Intermediate Mixture (IM) Model --- p.50 / Chapter 4.2.4 --- Valence Band Structure of a-SiNx --- p.51 / Chapter 4.3 --- Raman Measurements --- p.54 / Chapter 4.4 --- Photoluminescence of a-SiNx --- p.54 / Chapter 4.5 --- Large Scale Potential Fluctuations in a-SiNx --- p.56 / Chapter 4.6 --- Conclusion --- p.61 / References --- p.62 / Chapter Chapter 5 --- MOTT RULE VERIFICATION OF a-SiOxNy --- p.65 / Chapter 5.1 --- Sample Preparation --- p.65 / Chapter 5.2 --- Validity of Mott Rule on a-SiOxNy --- p.66 / Chapter 5.3 --- Conclusion --- p.73 / References --- p.74 / Chapter Chapter 6 --- SHORT RANGE ORDER OF a-SiOxNy --- p.75 / Chapter 6.1 --- Angle Resolved XPS Analysis --- p.75 / Chapter 6.2 --- Random Bonding Model Simulation of a-SiOxNy --- p.75 / Chapter 6.3 --- Conclusion --- p.79 / References --- p.82 / Chapter Chapter 7 --- CONCLUSIONS --- p.83

by Leung Chi Hung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Leung Chi Hung. / Acknowledgments --- p.i / Abstract --- p.ii-iii / Table of Contents --- p.iv-v / Figures Caption --- p.vi-xii / Tables Caption --- p.xiii / Chapter 1. --- Introduction / Chapter 1.1 --- "Magnetoresistance (MR),Giant Magnetoresistance (GMR),Colossal Magnetoresistance (CMR) and Their Applications" --- p.1-1 / Chapter 1.2 --- Colossalmagnetoresistance Effect in LCMO --- p.1-5 / Chapter 1.3 --- Significance of Ultra-Sharp Metal-Semiconductor Transition LCMO Thin Film --- p.1-12 / Chapter 1.4 --- The Use of Silver in the YBCO --- p.1-14 / Chapter 1.5 --- Previews --- p.1-15 / Chapter 1.6 --- References --- p.1-17 / Chapter 2. --- Epitixial Growth of Single-Crystal LCMO Thin Film by FTS method / Chapter 2.1 --- Facing-Target Sputtering Method --- p.2-1 / Chapter 2.2 --- Fabrication of LCMO Targets --- p.2-4 / Chapter 2.3 --- Deposition of the LCMO Thin Film / Chapter 2.3.1 --- Deposition Condition --- p.2-6 / Chapter 2.3.2 --- Deposition Process --- p.2-9 / Chapter 2.4 --- X-ray Diffraction Studies and Surface Morphology --- p.2-11 / Chapter 2.5 --- M-S Transition of LCMO Thm Film --- p.2-15 / Chapter 2.6 --- Discussions --- p.2-19 / Chapter 3. --- The Role of Silver in LCMO / Chapter 3.1 --- Reaction between Ag and LCMO --- p.3-1 / Chapter 3.2 --- Grain Size and Transition Temperature in Bulk LCMO --- p.3-9 / Chapter 3.3 --- Improving the Sharpness of Metal - Semiconductor Transition and Crystallinity of LCMO Film --- p.3-15 / Chapter 3.4 --- Stabilization of the LCMO Structure --- p.3-21 / Chapter 3.5 --- Discussions --- p.3-25 / Chapter 4 --- Epitaxial Growth of the Ultra-Sharp Metal-Semiconductor Transition LCMO Thin Film / Chapter 4.1 --- Synthesis Process of the Ultra-Sharp Metal-Semiconductor Transition LCMO Thin Films --- p.4-1 / Chapter 4.2 --- Resistivity and Magnetoresistance --- p.4-6 / Chapter 4.3 --- Thermal Annealing Effects / Chapter 4.3.1 --- Oxygen Annealing Effect --- p.4-15 / Chapter 4.3.1 --- High Pressure Annealing Effect --- p.4-20 / Chapter 4.3.2 --- Vacuum Annealing Effect --- p.4-23 / Chapter 4.4 --- Surface Morphology and Characterization --- p.4-27 / Chapter 4.5 --- Discussions --- p.4-37

by Chan Hing Nam = 壓力對La₀.₆₇Ca₀.₃₃MnO₃薄膜的導電能的效應 / 陳慶楠. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Chan Hing Nam = Ya li dui La₀.₆₇Ca₀.₃₃MnO₃ bo mo de dao dian neng de xiao ying / Chen Qingnan. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iii / Table of contents --- p.iv / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction to colossal magnetoresistance --- p.1-1 / Chapter 1.2 --- Effects of chemical pressure and strain on LCMO thin films --- p.1-7 / Chapter 1.3 --- Review of pressure effects on bulk LCMO --- p.1-11 / Chapter Chapter 2 --- Instrumentation and Characterization / Chapter 2.1 --- Preparation of LCMO thin films --- p.2-1 / Chapter 2.2 --- X-ray diffraction (XRD) --- p.2-3 / Chapter 2.3 --- Self-clamping pressure cell --- p.2-5 / Chapter 2.3.1 --- Electrical feedthroughs --- p.2-5 / Chapter 2.3.2 --- Teflon cell --- p.2-8 / Chapter 2.3.3 --- Pressure variations in the pressure-transmitting medium --- p.2-9 / Chapter Chapter 3 --- Pressure effect on LCMO thin films grown on different substrates / Chapter 3.1 --- Annealing effect --- p.3-1 / Chapter 3.2 --- Thickness effect --- p.3-4 / Chapter 3.3 --- Lattice effect and pressure effect --- p.3-5 / Chapter 3.4 --- Crystallinity effect --- p.3-13 / Chapter Chapter 4 --- Activation energy of small polaron in LCMO thin films / Chapter 4.1 --- Motivation --- p.4-1 / Chapter 4.2 --- Basic theory --- p.4-2 / Chapter 4.3 --- Activation energy --- p.4-4 / Chapter Chapter 5 --- Conclusion --- p.5-1

Yeung Chun Fai = 厚度和眞空熱處理對單晶 La0.67Ca0.33MnO3 薄膜特性之影響 / 楊進輝. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yeung Chun Fai = Hou du he zhen kong re chu li dui dan jing La0.67Ca0.33MnO3 bo mo te xing zhi ying xiang / Yang Jinhui. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iv / Table of contents --- p.v / List of Figures --- p.viii / List of Tables --- p.xiii / Chapter Chapter I --- Introduction / Chapter 1.1 --- Development of magnetoresistance materials --- p.1-1 / Chapter 1.1.1 --- Magnetoresistance (MR) --- p.1-1 / Chapter 1.1.2 --- Anisotropy magnetoresistance (AMR) --- p.1-1 / Chapter 1.1.3 --- Giant magnetoresistance (GMR) --- p.1-2 / Chapter 1.1.4 --- Colossal magnetoresistance (CMR) in rare-earth manganites --- p.1-3 / Chapter 1.1.5 --- Possible origin of CMR in rare-earth manganites --- p.1-4 / Chapter 1.1.5.1 --- Double exchange mechanism --- p.1-4 / Chapter 1.1.5.2 --- Jahn-teller effect --- p.1-6 / Chapter 1.1.5.3 --- Other mechanisms --- p.1-7 / Chapter 1.1.6 --- Possible origins of CMR in Thallium manganite pyrochlores (TI2Mn207) --- p.1-7 / Chapter 1.2 --- New developments in manganite materials --- p.1-8 / Chapter 1.3 --- Our approach --- p.1-8 / Chapter 1.3.1 --- Why choose La0 .67Ca0.33Mn03 material? --- p.1-8 / Chapter 1.3.2 --- The role of oxygen content in manganite materials --- p.1-9 / Chapter 1.4 --- The scope of this thesis work --- p.1-11 / References --- p.1-12 / Chapter Chapter II --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.2-1 / Chapter 2.1.1 --- Introduction --- p.2-1 / Chapter 2.1.2 --- Facing-target sputtering (FTS) --- p.2-3 / Chapter 2.1.3 --- Deposition profile calculation for sputtering with FTS --- p.2-4 / Chapter 2.1.4 --- Vacuum system --- p.2-7 / Chapter 2.2 --- Characterization --- p.2-8 / Chapter 2.2.1 --- Profilometer --- p.2-8 / Chapter 2.2.2 --- Atomic force microscopy (AFM) --- p.2-8 / Chapter 2.2.3 --- X-ray diffraction (XRD) --- p.2-8 / Chapter 2.2.4 --- Resistance and magnetoresistance measurement --- p.2-10 / Chapter 2.2.5 --- Hall effect measurement --- p.2-11 / References --- p.2-13 / Chapter Chapter III --- Epitaxial growth of La0.67Ca0.33 Mn03 thin films / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- Fabrication and characteristics of LCMO target --- p.3-1 / Chapter 3.3 --- Substrate materials --- p.3-5 / Chapter 3.4 --- Deposition --- p.3-10 / Chapter 3.4.1 --- Sample preparation --- p.3-10 / Chapter 3.4.2 --- Substrate temperature --- p.3-10 / Chapter 3.4.3 --- Deposition process --- p.3-17 / Chapter 3.5 --- Post-annealing effect --- p.3-18 / Chapter 3.6 --- Film composition analysis --- p.3-22 / Chapter 3.7 --- Epitaxial growth examination --- p.3-22 / References --- p.3-27 / Chapter Chapter IV --- Thickness effect in single-crystal LCMO thin films grown on NGO and STO / Chapter 4.1 --- Motivation --- p.4-1 / Chapter 4.2 --- Resistance measurement --- p.4-2 / Chapter 4.3 --- Magnetoresistance (MR) --- p.4-8 / Chapter 4.4 --- Crystal structure --- p.4-12 / Chapter 4.5 --- Surface morphology --- p.4-16 / Chapter 4.6 --- Hall effect measurement --- p.4-19 / Chapter 4.6.1 --- Basic principle --- p.4-19 / Chapter 4.6.2 --- Experiment --- p.4-20 / Chapter 4.6.3 --- Carrier concentration & mobility --- p.4-20 / Chapter 4.7 --- Discussions --- p.4-25 / References --- p.4-27 / Chapter Chapter V --- Strain dependent vacuum annealing effectin single-crystal La0.67Ga0.33MnO3 thin films / Chapter 5.1 --- Motivation --- p.5-1 / Chapter 5.2 --- Sample description --- p.5-1 / Chapter 5.3 --- Vacuum annealing process --- p.5-2 / Chapter 5.4 --- Crystal structure --- p.5-2 / Chapter 5.5 --- Resistance measurement --- p.5-6 / Chapter 5.6 --- Discussions --- p.5-8 / Chapter 5.6.1 --- Lattice expansion --- p.5-8 / Chapter 5.6.2 --- Determination of oxygen content --- p.5-9 / References --- p.5-11 / Chapter Chapter VI --- Activation energy of small polaron in La0.67Ca0.33MnO3 thin films / Chapter 6.1 --- Motivation --- p.6-1 / Chapter 6.2 --- Basic theory --- p.6-1 / Chapter 6.2.1 --- Variable range hopping --- p.6-1 / Chapter 6.2.2 --- Semiconduction --- p.6-2 / Chapter 6.2.3 --- Nearest-neighbor hoping of small polarons --- p.6-2 / Chapter 6.3 --- Sample description --- p.6-3 / Chapter 6.4 --- Resistance measurement --- p.6-4 / Chapter 6.5 --- Activation energy --- p.6-4 / Chapter 6.6 --- Discussions --- p.6-5 / References --- p.6-12 / Chapter Chapter VII --- Conclusions --- p.7-1

by Poon Chun Yu. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 110-112). / Abstracts in English and Chinese. / ACKNOWLEDGEMENTS --- p.2 / ABSTRACT --- p.3 / TABLE OF CONTENTS --- p.5 / LIST OF FIGURES --- p.8 / LIST OF TABLES --- p.13 / Chapter CHAPTER 1 --- INTRODUCTION --- p.14 / Chapter 1.1 --- Overview --- p.14 / Chapter 1.2 --- Ferromagnetism --- p.15 / Chapter 1.3 --- Ferromagnetic granular thin film --- p.16 / Chapter 1.4 --- Ferromagnetism-magnetization --- p.17 / Chapter 1.5 --- Ferromagnetism - magnetization of a polycrystalline --- p.18 / Chapter 1.6 --- Soft and hard magnetic materials --- p.21 / Chapter 1.7 --- Preparation methods --- p.22 / Chapter 1.8 --- This thesis --- p.24 / Chapter CHAPTER 2 --- SAMPLE PREPARATION AND EXPERIMENTAL METHODS --- p.25 / Chapter 2.1 --- Sample preparation --- p.25 / Chapter 2.1.1 --- The pulsed filtered cathodic arc co-deposition system --- p.25 / Chapter 2.1.2 --- Details of sample preparation --- p.27 / Chapter 2.1.3 --- Improvement of the target holder --- p.30 / Chapter 2.2 --- Rutherford backscattering spectrometry (RBS) --- p.30 / Chapter 2.3 --- X-ray diffraction (XRD) --- p.32 / Chapter 2.3.1 --- Diffraction technique --- p.32 / Chapter 2.3.2 --- Scherrer's formula --- p.35 / Chapter 2.4 --- Raman spectroscopy --- p.35 / Chapter 2.5 --- Transmission electron microscopy (TEM) --- p.36 / Chapter 3.5.1 --- The technique of transmission electron microscopy (TEM) --- p.36 / Chapter 3.5.2 --- Transmission electron microscopy (TEM) sample preparation --- p.37 / Chapter 2.6 --- X-ray photoelectron spectroscopy (XPS) --- p.41 / Chapter 2.6.1 --- The principle of XPS --- p.41 / Chapter 2.6.2 --- Qualitative analysis of XPS (chemical shift) --- p.43 / Chapter 2.7 --- Scanning probe microscopy (SPM) --- p.43 / Chapter 2.7.1 --- The principle of atomic force microscopy (AFM) --- p.43 / Chapter 2.7.2 --- Tapping mode atomic force microscopy --- p.44 / Chapter 2.7.3 --- Magnetic force microscopy (MFM) --- p.46 / Chapter 2.8 --- Vibrating sample magnetometer (VSM) --- p.47 / Chapter 2.8.1 --- The principle of VSM operation --- p.47 / Chapter 2.8.2 --- Useful of the pick up coils --- p.49 / Chapter 2.8.3 --- M-H Loop --- p.50 / Chapter 2.9 --- Four-contacts technique --- p.51 / Chapter CHAPTER 3 --- CHARACTERIZATION OF CO-DEPOSITED CO-C SAMPLES --- p.53 / Chapter 3.1 --- Introduction --- p.53 / Chapter 3.2 --- Results and discussion --- p.54 / Chapter 3.2.1 --- NRBS measurements --- p.54 / Chapter 3.2.2 --- X-ray diffraction --- p.57 / Chapter 3.2.3 --- Raman spectroscopy --- p.59 / Chapter 3.2.4 --- AFM and MFM measurements --- p.64 / Chapter 3.2.4.1 --- AFM result --- p.64 / Chapter 3.2.4.2 --- MFM result --- p.68 / Chapter 3.2.5 --- Vibrating sample magnetometer (VSM) measurements --- p.73 / Chapter 3.3 --- Summary --- p.78 / Chapter CHAPTER 4 --- CHARACTERIZATION OF CO-DEPOSITED FE-C SAMPLES --- p.79 / Chapter 4.1 --- Introduction --- p.79 / Chapter 4.2 --- Results and discussion --- p.80 / Chapter 4.2.1 --- NRBS measurement --- p.80 / Chapter 4.2.2 --- X-ray diffraction --- p.81 / Chapter 4.2.3 --- x-ray photoelectron spectroscopy (XPS) --- p.84 / Chapter 4.2.4 --- AFM results --- p.87 / Chapter 4.2.5 --- MFM results --- p.91 / Chapter 4.2.6 --- Vibrating sample magnetometer (VSM) measurements --- p.95 / Chapter 4.2.7 --- Resistivity --- p.99 / Chapter 4.2.8 --- Transmission electron microscopy (TEM) --- p.100 / Chapter 4.3 --- Application potential --- p.101 / Chapter 4.4 --- Summary --- p.104 / Chapter CHAPTER 5 --- CONCLUSION --- p.106 / Chapter 5.1 --- Main results of this work --- p.106 / Chapter 5.2 --- Future work --- p.108 / REFERENCE --- p.110 / PUBLICATIONS --- p.112 / APPENDIX --- p.113

by Lee Koon Ho. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Lee Koon Ho. / Acknowledgements --- p.i / Abstract --- p.ii / 論文摘要 --- p.iii / Table of Contents --- p.iv / List of Figures --- p.vi / List of Tables --- p.ix / Chapter Chapter I --- Introduction / Chapter 1.1 --- Review of magnetoresistance --- p.1 -1 / Chapter 1.1.1 --- Colossal magnetoresistance in rare earth manganites --- p.1 -2 / Chapter 1.1.2 --- Review of manganite multilayer system --- p.1-10 / Chapter 1.2 --- Research motivation --- p.1-12 / Chapter 1.2.1 --- Scope of the thesis --- p.1-14 / Reference --- p.1-15 / Chapter Chapter II --- Instrumentation --- p.2-1 / Chapter 2.1 --- Facing target sputtering system --- p.2-1 / Chapter 2.1.1 --- Preparation of LCMO/PCMO multilayer thin film --- p.2-3 / Chapter 2.2 --- Annealing system --- p.2-5 / Chapter 2.2.1 --- Oxygen post-annealing system --- p.2-5 / Chapter 2.2.2 --- Vacuum annealing system --- p.2-7 / Chapter 2.3 --- X-ray diffraction (XRD) --- p.2-9 / Reference --- p.2-11 / Chapter Chapter III --- Annealing of LCMO/PCMO multilayer thin films --- p.3-1 / Chapter 3.1 --- Oxygen post-annealing of LCMO/PCMO multilayer thin film --- p.3-1 / Chapter 3.1.1 --- Introduction to post-annealing of managanites oxides --- p.3-1 / Chapter 3.1.2 --- LCMO and PCMO Single Layer Films Description --- p.3-1 / Chapter 3.1.3 --- Selection of PCMO --- p.3-5 / Chapter 3.1.4 --- La2/3Ca1/3MnO3/ Pr2/3Ca1/3MnO3 Multilayer Description --- p.3-5 / Chapter 3.1.5 --- Oxygen post-annealing condition --- p.3-9 / Chapter 3.1.6 --- Oxygen post annealing of P100 --- p.3-9 / Chapter 3.1.7 --- Conclusion --- p.3-16 / Chapter 3.2 --- Vacuum annealing of LCMO/PCMO multilayer thin films --- p.3-19 / Chapter 3.2.1 --- Introduction --- p.3-19 / Chapter 3.2.2 --- Sample description --- p.3-20 / Chapter 3.2.3 --- Vacuum annealing condition --- p.3-21 / Chapter 3.2.4 --- Vacuum Annealing of LCMO and PCMO --- p.3-23 / Chapter 3.2.5 --- Vacuum Annealing of LCMO/PCMO multilayer thin films --- p.3-29 / Chapter 3.2.6 --- Conclusion --- p.3-49 / References --- p.3-50 / Chapter Chapter IV --- Activation energy of small polaron in LCMO/PCMO multilayer thin films --- p.4-1 / Chapter 4.1 --- Introduction to small lattice polarons --- p.4-1 / Chapter 4.2 --- Theory of small polarons --- p.4-2 / Chapter 4.3 --- Activation energy of small polaron --- p.4-3 / Chapter 4.4 --- Discussion --- p.4-7 / References --- p.4-8 / Chapter Chapter V --- Conclusions --- p.5-1

Throughout this work several thin film resists have been studied with substantial focus on HafSOx and SU-8. The study of HafSOx has granted more insight into how inorganic, spin coated films form and react under the electron beam. These films have been shown to form a thin dense crust at the surface that could have interesting implications in the interaction of the electrons. Continuing to further understand the electron interactions within the resist, low voltage patterns were created allowing the accelerating voltage to be matched to the film. With this general knowledge, higher resolution films can be constructed with shorter patterning times. Both resists complement each other in that HafSOx produces incredibly thin, dense structures to be formed with features below 10 nm in all dimensions. SU-8 allows micron thick features to be created over several millimeters. This flexibility in feature size enabled the creation of large fractals that could improve neuron binding to artificial retina down to the smallest fractals reported that are interesting for their applications as antennas. The final facet of this work involved looking at other methods of making structures. This was done through adding differing salts to organic molecules that stack into unique crystals. This dissertation includes previously published co-authored material.

We present a theoretical analysis of surface-plasmon-mediated mode-coupling in a planar thin film metal/insulator stack. The spatial overlap of a surface plasmon polariton (SPP) and a waveguide mode results in a Fano interference analog. Tuning of the material parameters effects the modes and output fields of the system. Lastly, the intensity and phase sensitivity of the system are compared to a standard surface plasmon resonance (SPR). We begin with background information on Fano interference, an interference effect between two indistinguishable pathways. Originally described for autoionization, we discuss the analogs in other systems. We discuss the features of Fano interference in the mode diagrams, and the Fano resonance observed in the output field. The idea of a geometric Fano resonance (GFR) occurring in the angular domain is presented. Background information on surface plasmon polaritons is covered next. The dielectric properties of metals and how they relate to surface plasmons is first reviewed. The theoretical background of SPPs on an infinite planar surface is covered. The modes of a two planar interface metal/insulator stack are reviewed and the leaky properties of the waveguide are shown in the reflectance. We solve for modes of a three interface metal/insulator stack and shows an avoided crossing in the modes indicative of Fano interference. We observe the asymmetric Fano resonance in the angular domain in the reflectance. The tunability of the material parameters tunes the GFR of the system. The GFR tuning is explored and different Fano lineshapes are observed. We also observe a reversal of the asymmetry Fano lineshape, attributed to the relate phase interactions of the non-interacting modes. The phase of the GFR is calculated and discussed for the variations of the parameters. The reflected field is explored as the insulator permittivities are varied. As the waveguide permittivity is varied, we show there is little response from the system. As the exterior permittivity is varied, the reflectance exhibits the geometric Fano resonance and the tunability of the lineshape is explored. Finally, we calculate the sensitivities of our metal/insulator stack to changes in the permittivity and compare them to the sensitivities of SPRs.

Lai Chung Wing = 金屬膜覆蓋在氧化鋅上之光學變化 / 黎頌榮. / Thesis submitted in: July 2005. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Lai Chung Wing = Jin shu mo fu gai zai yang hua xin shang zhi guang xue bian hua / Li Songrong. / Acknowledgements --- p.i / Abstract --- p.ii / 摘要 --- p.iii / Table of contents --- p.iv / List of Figures --- p.vi / Chapter Chapter 1 --- Introduction / Chapter 1.1. --- Motivation --- p.1-1 / Chapter 1.2. --- Literature Review --- p.1-2 / Chapter 1.3. --- Our Study --- p.1-4 / References --- p.1-6 / Chapter Chapter 2 --- Methodology and Experiments / Chapter 2.1. --- RF sputtering --- p.2-1 / Chapter 2.1.1. --- Setup of RF sputtering --- p.2-2 / Chapter 2.1.2. --- Sample preparation --- p.2-3 / Chapter 2.2. --- Scanning electron Microscope --- p.2-4 / Chapter 2.3. --- Cathodoluminescence --- p.2-5 / Chapter 2.3.1. --- Background of CL --- p.2-6 / Chapter 2.3.2. --- Room temperature CL studies --- p.2-7 / Chapter 2.3.3. --- Software: Casino --- p.2-8 / Chapter 2.3.4. --- Depth resolved CL studies --- p.2-10 / Chapter 2.3.5. --- Power dependent CL studies --- p.2-11 / Chapter 2.4. --- Photoluminescence / Chapter 2.4.1. --- General background of PL --- p.2-11 / Chapter 2.4.2. --- Room temperature PL studies --- p.2-12 / Chapter 2.4.3. --- Quantum efficiency measurement --- p.2-13 / Chapter 2.5. --- Optical transmission measurement --- p.2-13 / References --- p.2-15 / Chapter Chapter 3 --- Experimental Results and Data Analysis / Chapter 3.1. --- Study of Optical emissions of bare and Au-capped ZnO --- p.3-1 / Chapter 3.1.1. --- RT-luminescence of ZnO --- p.3-1 / Chapter 3.1.2. --- RT- Luminescence of Au- capped ZnO films --- p.3-2 / Chapter 3.2. --- RT-luminescence of metal capped ZnO --- p.3-7 / Chapter 3.3. --- Power dependent and depth Resolved CL --- p.3-10 / Chapter 3.3.1. --- Dependence of the CL on beam energy --- p.3-10 / Chapter 3.3.2. --- Dependence of the CL intensity on beam energy --- p.3-13 / Chapter 3.4. --- Dependence of metal thickness on the RT- luminescence --- p.3-17 / References --- p.3-19 / Chapter Chapter 4 --- Discussions / Chapter 4.1. --- General discussions --- p.4-1 / Chapter 4.2. --- Surface recombination Velocity / Chapter 4.2.1. --- Quantum Efficiency --- p.4-2 / Chapter 4.2.2. --- Simulation of the dependence of surface recombination velocity on the CL intensity of ZnO --- p.4-5 / Chapter 4.3. --- Effects of metallization on MgZnO/ZnO bilayer --- p.4-10 / Chapter 4.4. --- Surface plasmon --- p.4-13 / Chapter 4.5. --- PL measurement from the backside of substrate --- p.4-18 / Chapter 4.5.1. --- Au and Ag coating by sputtering --- p.4-19 / Chapter 4.5.2. --- Au and Ag coating by thermal evaporation --- p.4-21 / Chapter 4.6. --- Au coating spaced by MgO --- p.4-23 / Chapter 4.7. --- Optical transmission of Au-capped ZnO --- p.4-25 / Chapter 4.8. --- Cross Section images by AFM and TEM --- p.4-27 / Chapter 4.9. --- Application: optical improvement of semiconductor --- p.4-30 / Chapter 4.10. --- Summary --- p.4-32 / References --- p.4-34 / Chapter Chapter 5 --- Conclusions --- p.5-1 / Appendix I --- p.A / Appendix II --- p.K

Chong Yuen Tung = 硅化鐵薄膜的相和微觀結構 / 莊宛曈. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 63-65). / Text in English; abstracts in English and Chinese. / Chong Yuen Tung = Gui hua tie bo mo de xiang he wei guan jie gou / Zhuang Wantong. / Abstract --- p.i / 摘要 --- p.ii / Acknowledgment --- p.iii / Table of contents --- p.iv / List of Figures --- p.viii / List of Tables --- p.x / Chapter CHAPTER 1: --- Introduction --- p.1 / Chapter CHAPTER 2: --- Background --- p.4 / Chapter 2.1 --- Phases of crystalline FeSi2 --- p.4 / Chapter 2.2 --- Electronic structure of β-FeSi2 --- p.7 / Chapter 2.3 --- Orientation relationship between β-FeSi2 and Si --- p.8 / Chapter CHAPTER 3: --- Instrumentation --- p.10 / Chapter 3.1 --- Metal vapor vacuum arc ion source implantation --- p.10 / Chapter 3.2 --- Rutherford backscattering --- p.12 / Chapter 3.3 --- Transmission Electron Microscopy (TEM) --- p.13 / Chapter 3.3.1 --- Principles of TEM --- p.13 / Chapter 3.3.2 --- Electron specimen interaction and contrast --- p.14 / Chapter 3.3.3 --- Electron Diffraction --- p.15 / Chapter 3.3.4 --- Sample Preparation --- p.17 / Chapter 3.3.4.1 --- Plan-view sample --- p.17 / Chapter 3.3.4.2 --- Cross-section sample --- p.17 / Chapter CHAPTER 4: --- FeSi2 films fabricated by ion implantation --- p.18 / Chapter 4.1 --- Introduction --- p.18 / Chapter 4.2 --- Experimental details --- p.18 / Chapter 4.3 --- Ion energy series --- p.19 / Chapter 4.3.1 --- As-implanted sample --- p.19 / Chapter 4.3.1.1 --- Results --- p.20 / Chapter 4.3.1.2 --- Discussions --- p.20 / Chapter 4.3.2 --- Annealed samples --- p.24 / Chapter 4.3.2.1 --- Morphology of the annealed samples and the damage on Si substrate --- p.24 / Chapter 4.3.2.2 --- Identification of the FeSi2 phase and their orientation relationship with the Si matrix --- p.24 / Chapter 4.3.2.3 --- Photoluminescence of the samples --- p.26 / Chapter 4.3.2.4 --- Discussions --- p.26 / Chapter 4.4 --- Ion dosage series --- p.31 / Chapter 4.4.1 --- Results --- p.31 / Chapter 4.4.2 --- Discussions --- p.32 / Chapter 4.5 --- Summary --- p.36 / Chapter CHAPTER 5: --- Effect of post annealing on the phase and microstructure of FeSi2 --- p.37 / Chapter 5.1 --- Introduction --- p.37 / Chapter 5.2 --- Experimental details --- p.37 / Chapter 5.3 --- The correlation between microstructure of FeSi2 synthesized under different annealing conditions and their PL --- p.38 / Chapter 5.3.1 --- RTA series --- p.38 / Chapter 5.3.1.1 --- Results --- p.38 / Chapter 5.3.1.2 --- Discussions --- p.39 / Chapter 5.3.2 --- FA series --- p.42 / Chapter 5.3.2.1 --- Results --- p.42 / Chapter 5.3.2.2 --- Discussions --- p.44 / Chapter 5.3.3 --- RTAFA series --- p.45 / Chapter 5.3.3.1 --- Results --- p.45 / Chapter 5.3.3.2 --- Discussions --- p.45 / Chapter 5.4 --- The existence of alpha phase and its special shape --- p.51 / Chapter 5.4.1 --- Results --- p.51 / Chapter 5.4.2 --- Discussions --- p.52 / Chapter 5.5 --- The existence of gamma phase in 1050°C furnace annealed sample / Chapter 5.5.1 --- Results --- p.56 / Chapter 5.5.2 --- Discussions --- p.57 / Chapter 5.6 --- Summary --- p.59 / Chapter CHAPTER 6: --- Conclusions --- p.61 / References --- p.63