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The initial growth and evolution of microstructure of YBa2Cu3O7-8 thin and ultrathin films /Wong, Wing-han. January 1995 (has links)
Thesis (M. Phil.)--University of Hong Kong, 1996. / Includes bibliographical references (leaf 71-75).
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Growth and characteristization of YBa2Cu3Ox thin and ultrathin films /Chui, Ting-chung. January 1998 (has links)
Thesis (M. Phil.)--University of Hong Kong, 1999. / Includes bibliographical references.
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Adhesion of carbon and carbon related hard films /Hou, Qingrun. January 1999 (has links)
Thesis (Ph. D.)--University of Hong Kong, 1999. / Includes bibliographical references.
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Fabrication and characterization of epitaxial thin films and multilayers of La2/3Ca1/3MnO3 and YBa2Cu3Oy /Kam, Tung-Lee, Tony. January 2001 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2002. / Includes bibliographical references.
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Deposition, corrosion and coloration of tungsten trioxide electrochromic thin filmsSun, Sey-shing, January 1983 (has links)
Thesis (Ph. D.)--University of Florida, 1983. / Description based on print version record. Typescript. Vita. Includes bibliographical references (leaves 132-139).
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Coexistence of non-registered monolayer and bilayer solid filmsWei, Mein Sieng. January 1981 (has links)
Thesis (Ph. D.)--University of Wisconsin--Madison, 1981. / Typescript. Vita. Description based on print version record. Includes bibliographical references.
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Studies of two dimensional superconductor-normal metal hybrid thin films /Long, Zhenyi. January 2005 (has links)
Thesis (Ph.D.)--Brown University, 2005. / Vita. Thesis advisor: James M. Valles, Jr. Includes bibliographical references (leaves 9-10, 41, 65-66, 94-96, 121, 127). Also available online.
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Microbridge tests on multi-layer thin films /Wang, Xu-sheng. January 2006 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.
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The preparation and properties of rf-plasma-anodized silicon dioxide thin films and aluminum-silicon Schottky photodiodesReche, Jean Joseph Henri January 1973 (has links)
An experimental procedure which utilises rf plasma anodization to grow SiO2 films on silicon is described. The quality of these films is suitable for MOS technology and growth rates are practical for industrial manufacturing. The electrical and physical propeties of the silicon dioxide films have been studied with comparisons being made, whenever possible, to results obtained with films grown by other methods.
A novel method to determine the optical properties of thin films from single angle reflectance measurements has been devised in order to accurately monitor in-situ the growth of the thin films described in this work.
Large-area aluminum-silicon Schottky photodiodes with wide spectral response have been manufactured using plasma anodization as a processing step. An aluminum oxide coating is used for passivation, shaping of the spectral response and enhancement of the photoresponse throughout the spectrum of interest. The heights of the aluminum-p-type and -n-type silicon barriers are reported and a comparison is made between the experimental spectral response and a theoretical model. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
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Preparation of thin insulating films by plasma anodizationOlive, Graham January 1969 (has links)
The plasma anodization of polycrystalline niobium samples has been undertaken using a d.c. glow discharge in oxygen. The apparatus used, which has facilities for in situ ellipsometry measurements and sample temperature control, is described.
Anodizations were carried out at various constant current densities up to 1.5 mA cm⁻² , and Langmuir probes were used to estimate the volt drop across the oxide during growth. The ellipsometry measurements yield oxide thickness and refractive
index, and indicate that the films have a two-layer structure. Ionic currents are calculated from growth rates using Faraday's Law. Ionic current and oxide field strength data are analyzed and compared with published solution anodization
results on the basis of the classical model of ionic conduction at high field strengths. The permittivity and loss factor of the oxide films are deduced from bridge measurements on capacitor structures produced by depositing counterelectrodes on the oxide surface. The introduction of water into the discharge
was investigated, and found to affect the oxide growth rate. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
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