Global ETD Search

11	Modeling of self heating effects in hetrojunction bipolar transistors and implementation in spice software Manda, Malleswar. January 1996 (has links) Thesis (M.S.)--Ohio University, June, 1996. / Title from PDF t.p. Bipolar transistors Bipolar transistors
12	Modèle analytique à une dimension du transistor MOSFET de puissance prenant en compte les interactions thermoélectriques / Lallement, Christophe. January 1994 (has links) Th. doct.-ing.--Electronique et communications--Paris--ENST, 1993. / Résumé en français et en anglais. Notes bibliogr.
13	S-parameter modeling of two-port devices using a single, memoryless nonlinearity / Ditz, Marc William Legori, January 1992 (has links) Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1992. / Vita. Abstract. Includes bibliographical references (leaves 64-65). Also available via the Internet.
14	Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors Laser, Allan Paul January 1990 (has links) An investigation into various methods of calculation of the high frequency performance parameter f[formula omitted] for microwave heterojunction bipolar transistors is presented. Two high frequency representations of the device are developed: equivalent circuits consisting entirely of lumped circuit elements, and a two-port network based on drift-diffusion equations. Proper account is taken in these representations of the phase delay associated with carrier transit time through the base and base-collector space charge region. Also included are the charging time effects due to the various parasitic circuit elements associated with actual devices. A single-sided isolated structure is used in simulations and it is found that both representations yield remarkably similar characteristics for the behavior of unilateral gain U with frequency. For devices in which the dominant factors limiting high frequency performance are the parasitic resistances and capacitances, it is found that U rolls off at 6 dB/octave through the region where U = 1 and the values predicted for f[formula omitted] via these two methods, as well as via the widely-used analytical expression involving f[formula omitted] and (R[formula omitted]C[formula omitted])[formula omitted], are in agreement. However, when the periods of the oscillations are on the order of the carrier transit times, and the device parasitics are sufficiently low so as to not limit performance, resonance effects occur in U in the region where U = 1 and the prediction of f[formula omitted] obtained via the two equivalent circuit approaches deviates markedly from the predictions of the analytical expression. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate Microwave transistors Bipolar transistors
15	HBT/DHBTs for monolithic optoelectronic interfaces Loga, Rodney Izzat January 2002 (has links) No description available. 621 Transistors
16	Modelling of small geometry SOI MOSFETs for use in simulators Lin, Jyi Tsong January 1993 (has links) No description available. 620.0042029 Transistors
17	High current and voltage effects in heterojunction bipolar transistor collectors Yee, Mun Chun Marcus January 2002 (has links) No description available. 621 Transistors
18	Investigation into the noise performance of short gate-length FETS and their application in lightwave receivers Greaves, Stephen David January 1994 (has links) No description available. 621.31042 Transistors
19	Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors / Williams, C. Lea, January 1988 (has links) Thesis (M.S.)--Oregon Graduate Center, 1988. Bipolar transistors.
20	Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBT's / Shirokov, Mikhail S., January 2000 (has links) Thesis (Ph. D.)--Lehigh University, 2000. / Includes vita. Includes bibliographical references (leaves 97-98). Bipolar transistors.

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