Copper-alumina composites were developed for testing in abrasive wear applications. The composites featured a porous continuous ceramic-preform network infiltrated by a liquid metal to form the final consolidated composite. The liquid metal phase was pure copper. Six different ceramic preform variants were tested. Ceramic volume fractions of 40, 50 and 60% were used, of two preform types; one pure-alumina, and one with additional 2wt% copper(I) oxide (CU20), functioning as an infiltration aid, the effects of which were determined in a previous study; the copper-oxide reduced infiltration pressure and allowed the use of higher ceramic phase volume fraction in the final composite. Abrasive wear tests against two automotive braking system materials were conducted. Grey cast iron of alloy type GG15 was used to establish a baseline for behaviour of the six different composite samples and compare them. Following this, the three volume fraction variants of samples using the copper-oxide infiltration aid were trialled against a commercially-available European passenger vehicle brake pad friction material; ABEX 6091. Wear tests were conducted on a pin-on-disc tribometer. Hemispherical-headed pins were made from the composite and tested against rotating discs of the grey cast iron and the ABEX friction material. Contact velocity was kept constant at Ims-?? at room temperature in air, and contact loads up to 15N were used. Test loads of 1-4N were used against grey cast iron, and 15N against the ABEX friction material. Optical micrography was used to monitor the wear rate of samples tested against grey cast iron. Scanning electron microscopy (SEM) was used to characterise bulk microstructures and evaluate surface wear features. Transmission electron microscopy (TEM) was used for further microstructural investigation of the sintering and interfacial features of the undamaged pin samples, as well as damage zones and tribofilm compositions. Focussed ion beam (FIB) milling was used to create subsurface cross-sections of wear regions and prepare TEM samples. The wear performance of the different sample types was compared by ceramic content and preform additives. It was found that the wear resistance of pure-alumina preform composites was dependent on ceramic volume fraction. Increasing ceramic content lead to increased wear resistance. The lower sinter temperature of the samples with the copper oxide additive led to reduced wear resistance compared with the monolithic alumina preforms and changes in ceramic volume fractions were not discernable in wear resistance against grey cast iron. This could be further supported by qualitative micrographic observations. All tests against grey cast iron were dominated by tribochemical film formation, which was determined to be oxidation of the iron which formed at the composite pin contact surface. Further testing of the copper-oxide containing samples against the ABEX friction material revealed a mixed result; the 50 and 60% ceramic volume samples produced near-identical wear performance, while the 40% sample suffered poor wear resistance. The dominant wear mechanism of composite pins tested against the ABEX friction material was abrasive wear. Sub-surface analysis of wear pins revealed a prominent damage layer forming at the contact surface of all pin samples which progressively grew into the bulk material. This layer was believed to have an important effect on the wear behaviour of the materials.

Thesis (Ph.D.)--McMaster University, 2005. / Supervisor: G.C. Weatherly and M. Niewczas. Includes bibliographical references (leaves 171-177).

Thesis (M. S. in Interdisciplinary Materials Science)--Vanderbilt University, Aug. 2008. / Title from title screen. Includes bibliographical references.

Thesis (MSc.(Anatomy)--Faculty of Health Sciences)-University of Pretoria, 2007. / Includes bibliographical references.

Thesis (Ph. D.)--Ohio State University, 2005. / Title from first page of PDF file. Document formatted into pages; contains xxii, 212 p.; also includes graphics. Includes bibliographical references (p. 203-212). Available online via OhioLINK's ETD Center

abstract: The research of this dissertation has involved the nanoscale quantitative characterization of patterned magnetic nanostructures and devices using off-axis electron holography and Lorentz microscopy. The investigation focused on different materials of interest, including monolayer Co nanorings, multilayer Co/Cu/Py (Permalloy, Ni81Fe19) spin-valve nanorings, and notched Py nanowires, which were fabricated via a standard electron-beam lithography (EBL) and lift-off process. Magnetization configurations and reversal processes of Co nanorings, with and without slots, were observed. Vortex-controlled switching behavior with stepped hysteresis loops was identified, with clearly defined onion states, vortex states, flux-closure (FC) states, and Omega states. Two distinct switching mechanisms for the slotted nanorings, depending on applied field directions relative to the slot orientations, were attributed to the vortex chirality and shape anisotropy. Micromagnetic simulations were in good agreement with electron holography observations of the Co nanorings, also confirming the switching field of 700-800 Oe. Co/Cu/Py spin-valve slotted nanorings exhibited different remanent states and switching behavior as a function of the different directions of the applied field relative to the slots. At remanent state, the magnetizations of Co and Py layers were preferentially aligned in antiparallel coupled configuration, with predominant configurations in FC or onion states. Two-step and three-step hysteresis loops were quantitatively determined for nanorings with slots perpendicular, or parallel to the applied field direction, respectively, due to the intrinsic coercivity difference and interlayer magnetic coupling between Co and Py layers. The field to reverse both layers was on the order of ~800 Oe. Domain-wall (DW) motion within Py nanowires (NWs) driven by an in situ magnetic field was visualized and quantified. Different aspects of DW behavior, including nucleation, injection, pinning, depinning, relaxation, and annihilation, occurred depending on applied field strength. A unique asymmetrical DW pinning behavior was recognized, depending on DW chirality relative to the sense of rotation around the notch. The transverse DWs relaxed into vortex DWs, followed by annihilation in a reversed field, which was in agreement with micromagnetic simulations. Overall, the success of these studies demonstrated the capability of off-axis electron holography to provide valuable insights for understanding magnetic behavior on the nanoscale. / Dissertation/Thesis / Ph.D. Materials Science and Engineering 2010

Dans cette thèse, nous abordons les défis rencontrés lors de la caractérisation des mémoires non volatiles par microscopie en transmission in situ. Les innovations récentes menées sur les porte-objets de TEM in situ basés sur l'utilisation de puces en silicium apportent de grands avantages comparée aux précédents modèles. Cependant, cette technique reste complexe et les expériences de MET in situ sont difficiles à mener à terme. Ce manuscrit tente d'apporter de nouvelles solutions pour permettre l'observation à l'échelle atomique pendant le recuit, ou la polarisation d'un échantillon dans le MET. Ce projet a été mené à travers plusieurs améliorations effectuées au cours des différentes étapes des expériences de MET in situ. Cette thèse se focalise plus particulièrement sur les problèmes rencontrés lors de la polarisation de dispositifs de mémoires résistives de taille nanométrique. Ces travaux furent conduits à travers une étude des instruments utilisés, le développement de nouvelles méthodes de préparation d'échantillons, et une analyse de l'impact de l'imagerie électronique sur le fonctionnement d'un dispositif dans le MET.Tout d’abord, une nouvelle méthode est développée spécifiquement pour les expériences de MET in situ en température. Grâce à ces développements, la cristallisation de mémoires à changement de phase en GeTe est observée en temps réel. Ces résultats ont notamment permis d'obtenir des informations utiles pour le développement de mémoires à changement de phase de type chalcogénure. Ensuite, de nouvelles puces en silicium dédiées à la polarisation in situ sont développées et produites. Une étude est ensuite menée sur la préparation d'échantillons par FIB afin d'améliorer la qualité des contacts électriques pour la polarisation in situ, ainsi que la technique de préparation elle-même. La qualité de cette méthode est ensuite démontrée à travers des mesures quantitatives obtenues pendant la polarisation in situ d'un échantillon de référence de type jonction PN. Ces développements sont ensuite appliqués afin d’observer des dispositifs de mémoires résistives de type CBRAM en fonctionnement dans le microscope électronique en transmission. Ces résultats ont permis d'apporter de nouvelles informations sur les mécanismes de fonctionnement des mémoires résistives, ainsi que sur la technique de polarisation in situ. / In this work, we address the current challenges encountered during in situ Transmission Electron Microscopy characterization of emerging non volatile data storage technologies. Recent innovation on in situ TEM holders based on silicon micro chips have led to great improvements compared to previous technologies. Still, in situ is a particularly complicated technique and experiments are extremely difficult to implement. This work provides new solutions to perform live observations at the atomic scale during both heating and biasing of a specimen inside the TEM. This was made possible through several improvements performed at different stages of the in situ TEM experiments. The main focus of this PhD concerned the issues faced during in situ biasing of a nanometer size resistive memory device. This was made possible through hardware investigation, sample preparation method developments, and in situ biasing TEM experiments.First, a new sample preparation method has been developed specifically to perform in situ heating experiments. Through this work, live crystallization of a GeTe phase change Memory Material is observed in the TEM. This allowed to obtain valuable information for the development of chalcogenide based Phase Change Resistive Memories. Then, new chips dedicated to in situ biasing experiments have been developed and manufactured. The FIB sample preparation is studied in order to improve electrical operation in the TEM. Quantitative TEM measurements are then performed on a reference PN junction to demonstrate the capabilities of this new in situ biasing experimental setup. By implementing these improvements performed on the TEM in situ biasing technique, results are obtained during live operation of a Conductive Bridge Resistive Memory device. This allowed to present new information on the resistive memories functioning mechanisms, as well as the in situ TEM characterization technique itself.

The development of InGaN quantum dots (QDs) is both scientifically challenging and promising for applications in visible spectrum LEDs, lasers, detectors, electroabsorption modulators and photovoltaics. Such QDs are typically grown using the Stranski-Krastanov (SK) growth mode, in which accumulated in-plane compressive strain induces a transition from 2D to 3D growth. This method has a number of inherent limitations, including the unavoidable formation of a 2D wetting layer and the difficulty of controlling the composition, areal density, and size of the dots. In this research, I have developed InGaN QDs by two methods using a plasma-assisted molecular beam epitaxy reactor. In the first method, InGaN QDs were formed by SK growth mode on (0001) GaN/sapphire. In the second, I have addressed the limitations of the SK growth of InGaN QDs by developing a novel alternative method, which was utilized to grow on both (0001) GaN/sapphire and AlN/sapphire. This method relies upon the ability to form thermodynamically stable In-Ga liquid solutions throughout the entire compositional range at relatively low temperatures. Upon simultaneous or sequential deposition of In and Ga on a substrate, the adatoms form a liquid solution, whose composition is controlled by the ratio of the fluxes of the two constituents FIn/(FIn+FGa). Depending on the interfacial free energy between the liquid deposit and substrate, the liquid deposit and vapor, and the vapor and substrate, the liquid deposit forms Inx-Ga1−x nano-droplets on the substrate. These nano-droplets convert into InxGa1−xN QDs upon exposure to nitrogen RF plasma. InGaN QDs produced by both methods were investigated in-situ by reflection high-energy electron diffraction and ex-situ by atomic force microscopy, field emission scanning electron microscopy, transmission electron microscopy, high resolution x-ray diffraction, and grazing incidence small angle x-ray scattering. The optical activity and device potential of the QDs were investigated by photoluminescence measurements and the formation and evaluation of PIN devices (in which the intrinsic region contains QDs embedded within a higher bandgap matrix). InGaN QDs with areal densities ranging from 109 to 1011 cm−2 and diameters ranging from 11 to 39 nm were achieved.

No description available.

Non-crystalline thin solid films are seeing increasing interest for a wide variety of applications. However, understanding structure and compositional variations in these films is an immense challenge. Conventional bulk structural or compositional characterization techniques such as X-ray diffraction often do not provide an adequate amount of information on their own. Electron microscopy is an incredibly powerful technique for structural and compositional film characterization, but is limited to inspection of only a small volume of any given sample. Rather than using one technique alone to gain information about a specimen, the greatest success is realized when these techniques are used in concert. This dissertation illustrates the idea that statistical analysis of electron microscopy data can provide information invaluable to interpreting bulk structural and compositional data from non-crystalline films. The first set of examples include demonstration of a statistical analysis method that can be applied to electron microscopy data to determine the presence of inhomogeneity along one film axis. This analysis method is applied to understanding compositional inhomogeneity that develops during formation of amorphous oxide films from aqueous solutions. Key insights are revealed that aid interpretation of bulk film X-ray characterization and possible processing conditions that lead to the compositional inhomogeneity. The second and third sets of examples describe the importance of electron microscopy analysis for structure determination in rotationally-disordered, non-epitaxial 2D heterostructures prepared from modulated elemental reactants. The second set of examples investigates the effects of nanoarchitecture on interlayer interactions and layer structure in heterostructures with interleaved BiSe and NbSe2 layers. The BiSe layers in these compounds display an interesting structural variation that impacts the overall compound properties. The structural variation is not visible using typical X-ray diffraction experiments, but analysis of electron microscopy images provides key insight into its existence. Finally, the third set of examples investigate several SnSe-containing heterostructures that provide insight into the unusual consequences of their non-epitaxial structure and film formation from modulated elemental reactants. Electron microscopy analysis, in conjunction with other characterization techniques, was invaluable for uncovering structural and compositional details within these compounds. This work contains previously published and unpublished co-authored material. / 10000-01-01