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Scanning tunneling microscopy investigations of the N-type LaAlO3/TiO2-SrTiO3 heterostructureWang, Wen-Ching 22 July 2011 (has links)
The electronic structure at interface between two insulators LaAlO3 and SrTiO3 has been investigated by using scanning tunneling microscopy and spectroscopy. The atomic-scale interfacial band structure is also demonstrated in the work with the consideration of the tip-induced band bending effect.
Experimental results indicate that the magnitude of the built-in field across LaAlO3 is 0.075¡Ó0.005 V/Å. The band bending on SrTiO3 side at the heterointerface is observed. The band downshift of SrTiO3 side at the interface is 0.1 eV with ~1 nm decay length.
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Scanning tunneling microscopy and spectroscopy investigation of the interfacial electronic properties of the N-type LaAlO3/TiO2-SrTiO3 hetero-structureHuang, Po-Cheng 05 September 2012 (has links)
In this work, the interfacial electronic property between N-type LaAlO3/TiO2-SrTiO3 has been investigated by using scanning tunneling microscopy and spectroscopy (STM/S). With the consideration of the tip-induced band bending effect during STM measurements and in conjunction with the three-dimensional theoretically analysis, the schematic band structure of the hetero-structured SrTiO3/LaAlO3 is also revealed.
Results indicate that the magnitude of the built-in field on the LaAlO3 is (30¡Ó5) mV/Å. The band bending on SrTiO3 side at the heterointerface is also observed. The band downshift of SrTiO3 side at the interface is 0.31 eV with about 0.8 nm decay length.
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Scanning tunneling microscopy and spectroscopy of passivated gold nanocrystalsBigioni, Terry Paul 12 1900 (has links)
No description available.
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Scanning tunneling microscopy of complex electronic materialsTomic, Aleksandra T. January 2008 (has links)
Thesis (Ph.D.)--Michigan State University. Dept. of Physics and Astronomy, 2008. / Title from PDF t.p. (viewed on Mar. 27, 2009) Includes bibliographical references (p. 95-102). Also issued in print.
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Spectroscopy of the Temperature and Current Driven Metal-Insulator Transition in Ca₂RuO₄Cheng, Minghao January 2020 (has links)
This thesis presents the study for the temperature-driven and current-driven metal-insulator phase transition (MIT) in Ca₂RuO₄ via home-built variable temperature Scanning Tunneling Microscope. Atomically resolved topography images along with temperature dependence of resistivity are taken verifying the quality of the single crystals used in this experiment. Tunneling spectra are measured under various temperatures across the Tmi = 357K, which clearly shows spectra evolution with temperature and the difference between the room- temperature insulator phase and the high-temprature metal phase. Compared with DMFT calculation, the STS indicates lattice structure plays a vital role in the phase transition. Same measurement is conducted on the crystals under a DC current, thanks to a custom designed sample holder. The evolution of the tunneling spectra with source current demon- strates similarity with the one of temperature-driven MIT. The comparison between the spectra taken at high-temperature metalic state and the high-current metalic state high- lights the similarity of these 2 phases, with both showing a DOS transfer from 1eV to lower energy, when compared with the ground state. Combined with a variety of other studies via transport, scattering technique and infrared thermal imaging, it is found that the local temperature dominates both temperature-driven and current-driven MIT. It is very likely that the current-driven is caused by the inevitable Joule heating generated by the current, indicating the high-current metallic phase might be the same with high-current metallic phase. Finally, surface roughness and autocorrelation length analysis suggests an inhomo- geneous surface topography stemmed from the coexistence of the insulating S* phase and conducting L* phase under current.
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NORMAL AND SPIN POLARIZED TRANSPORT IN HIGH-TEMPERATURE SUPERCONDUCTOR TUNNELING JUNCTIONSFreamat, Mario Vadim 01 January 2004 (has links)
One of the challenges facing condensed matter physics nowadays is to understand the electronic structure of high temperature superconductors. This dissertation compiles our contribution to the experimental information concerning this subject. Tunneling conductance spectroscopy a technique capable of probing the electronic density of states in hybrid structures was used to study the current and spin transport properties across junctions between metallic counterelectrodes and Bi2Sr2CaCu2O8- (BSCCO) crystals. Since in these structures the transport is mediated by transmission channels depending on superconductive characteristics, the energy resolved density of states is a signature of the mechanism of superconductivity. For instance, one can observe the superconductive energy gap and the behavior of subgap bound states due to phase sensitive Andreev reflections at the junction interface. In particular, tunneling spectroscopy makes possible the observation of the LOFF state characterized by the coexistence of superconductivity and magnetism. Cuprates like BSCCO are highly anisotropic materials and their superconductivity is almost two dimensional, being confined in the CuO2 planes. Therefore, our junctions combine monocrystals of underdoped samples of BSCCO with various thin film counterelectrodes normal metal (Ag), conventional superconductor (Pb) and ferromagnetic metal (Fe) deposited perpendicular onto the cuprate ab-plane (CuO2 plane). We performed measurements on Ag/BSCCO junctions for two current injection directions into the same crystal. We observed that, near the 110 crystal surface, the conductance spectra show a high zero bias peak (ZBCP) which is a manifestation of zero energy Andreev bound states due to an anisotropic superconductive order parameter. Near the 100 surface, the ZBCP is largely suppressed. This is consistent with a predominantly 2 2 x y d - -wave pairing symmetry. In some cases, the ZBCP splits or decreases in amplitude at low temperatures. This is consistent with the existence of a subdominant s-wave (or xy d ) resulting in a mixed d is + state which breaks time reversal symmetry (BTRS). Since we observe this phenomenon in the underdoped case, we do not confirm the possibility of a quantum critical point close to the optimal doping. Our Pb/BSCCO spectra contradict the theory explaining the BTRS by proximity effect. The Fe/BSCCO junctions measure the effect of spin polarization. We explain the recorded 4-peak asymmetric structure by the combined effect of a spin independent BTRS state and a spin filtering exchange energy in the barrier responsible for a large ZBCP splitting. The LOFF state was observed in the proximity region induced on the ferromagnetic side of multilayered-Fe/Ag/BSCCO structures. As expected for the LOFF order parameter, the spectra develops coherent damped oscillations with the Fe layer thickness probing different regions. The magnitude and sign of the oscillation depends on the energy. The conductances at energy zero or equal to the superconductive gap are modulated in antiphase proving that the order parameters takes successively positive and negative values. Changing the junction orientation with 4 p , results in an opposite behavior for the same distance. The maximal amplitudes in one direction is replaced by minima, showing that, besides space, the LOFF state modulation depends on the phase of the high temperature order parameter inducing the proximity
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Scanning tunneling microscopy and spectroscopy of the electronic structure of Mn £_-doped GaN films grown by molecular beam epitaxyHsu, Shu-wei 22 July 2011 (has links)
The electronic structures of Mn £_-doped epitaxial GaN films grown on sapphire substrates are studied by scanning tunneling microscopy in this work. Local structural information and the corresponding electronic properties of Mn £_-doped GaN films are probed by the combination of scanning tunneling microscopy and atomic-scale scanning tunneling spectroscopy measurements. According to the electronic local density of states analysis indicates that Mn ions develop an acceptor level in GaN, revealing a gap state located at ~ 1.4 eV above the valence band edge of GaN. Furthermore, the energy position of the charge transfer levels of substitutional MnGa within GaN energy gap is also elucidated and discussed in the work.
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Elastic and Inelastic Electron Tunneling in Molecular DevicesKula, Mathias January 2006 (has links)
<p>A theoretical framework for calculating electron transport through molecular junctions is presented. It is based on scattering theory using a Green's function formalism. The model can take both elastic and inelastic scattering into account and treats chemical and physical bonds on equal footing. It is shown that it is quite reliable with respect to the choice of functional and basis set. Applications concerning both elastic and inelastic transport are presented, though the emphasis is on the inelastic transport properties. The elastic scattering application part is divided in two part. The first part demonstrates how the current magnitude is strongly related to the junction width, which provides an explanation why experimentalists get two orders of magnitude differences when performing measurements on the same type of system. The second part is devoted to a study of how hydrogenbonding affects the current-voltage (I-V) characteristics. It is shown that for a conjugated molecule with functional groups, the effects can be quite dramatic. This shows the importance of taking possible intermolecular interactions into account when evaluating and comparing experimental data. The inelastic scattering part is devoted to get accurate predictions of inelastic electron tunneling spectroscopy (IETS) experiments. The emphasis has been on elucidating the importance of various bonding conditions for the IETS. It is shown that the IETS is very sensitive to the shape of the electrodes and it can also be used to discriminate between different intramolecular conformations. Temperature dependence is nicely reproduced. The junction width is shown to be of importance and comparisons between experiment as well as other theoretical predictions are made.</p>
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Low temperature scanning tunneling microscope study of low-dimensional superconductivity on metallic nanostructuresKim, Jungdae 28 October 2011 (has links)
Superconductivity is a remarkable quantum phenomenon in which a macroscopic number of electrons form a condensate of Cooper pairs that can be described by a single quantum wave function. According to the celebrated Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity, there is a minimum length scale (the coherence length) below which the condensate has a rigid quantum phase. The fate of superconductivity in a system with spatial dimensions smaller than [the coherence length] has been the subject of intense interest for decades and recent studies of superconductivity in ultra-thin epitaxial metal films have revealed some surprising behaviors in light of BCS theory. Notably, it was found that superconductivity remains robust in thin lead films with thicknesses orders of magnitude smaller than the coherence length (i.e. in the extreme two dimensional limit). Such studies raise the critical question: what happens to superconductivity as all dimensions are reduced toward the zero dimensional limit? By controlling the lateral size of ultra thin 2D islands, we systematically address this fundamental question with a detailed scanning tunneling microscopy/spectroscopy study. We show that as the lateral dimension is reduced, the strength of the superconducting order parameter is also reduced, at first slowly for dimensions larger than the bulk coherence length, and then dramatically at a critical length scale of ~ 40nm. We find this length scale corresponds to the lateral decay length of the order parameter in an island containing regions of different heights and different superconducting strength. Overall, our results suggest that fluctuation corrections to the BCS theory are important in our samples and may need to be systematically addressed by theory. / text
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A scanning probe microscopy (SPM) study of Bi(110) nanostructures on highly oriented pyrolytic graphite (HOPG)Mahapatra, Ojas January 2013 (has links)
This research work is aimed at understanding the electronic properties of Bi(110) nanostructures. This study chiefly uses Scanning Tunneling Microscopy (STM), Scanning Tunneling Spectroscopy (STS) and Non Contact Atomic Force Microscope (NCAFM) to investigate the geometric and electronic structure of Bi(110) islands on highly oriented pyrolytic graphite (HOPG) substrate.
STM measurements are the primary focus of the thesis which involves imaging the bismuth islands and study of its atomic structure. STM images of the Bi(110) islands reveal a ‘wedding cake’ profile of the bismuth islands that show paired layers on top of a base. I(V) (Current vs voltage) data was acquired via STS techniques and its first derivative was compared to DFT calculations. The comparison implied the presence of a dead wetting layer which was present only underneath the bismuth islands. We observed bilayer damped oscillations in the surface energy that were responsible for the stability of paired layers in Bi(110) islands. Interesting Moiré pattern arising out of misorientation between the substrate and the overlayer are also observed in STM images on some bismuth islands.
Bright features pertaining to enhanced LDOS (local density of states) were observed on the perimeter of the bismuth islands and stripes in the STM images and STS dI/dV maps which appear at energies around the Fermi level. The bright features which we termed as ‘bright beaches (BB)’ are also observed on grain boundaries and defects that suggest that they are related to termination of the chain of bismuth atoms.
The Bi(110) islands and stripes were observed to form preferred widths with a well defined periodicity. This peculiar phenomenon was attributed to a lateral quantum size effect (QSE) that results from a Fermi wave vector with appropriate shifts in Fermi energy. The widths of the islands prefer to adjust themselves at the nodes of this in-plane Fermi wavelength.
NaCl deposited on a HOPG substrate forms cross shaped islands which were used as spacers to limit the interaction between the bismuth films and the underlying HOPG substrate. The NaCl islands are transparent to the flow of tunneling current and allow STS measurements. The LDOS of Bi/HOPG was very similar to the LDOS of Bi deposited on NaCl/HOPG which suggests that the wetting layer underneath the bismuth islands plays an important role in decoupling the film from the underlying substrate.
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